IRF820 MOSFET N-Channel 500V 2.5A Equivalent & Substitute Parts

Part Overview

The IRF820 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 500V drain-to-source voltage with 2.5A continuous drain current at 25°C. The device is packaged in a Through Hole TO-220AB configuration and dissipates a maximum of 50W at the case temperature. The IRF820 is classified as an obsolete product, necessitating identification of equivalent and substitute components for ongoing system support and new design implementations. Direct equivalents and parametrically compatible alternatives are available from multiple manufacturers with active product status and improved compliance certifications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	500	V
Current - Continuous Drain (Id) @ 25°C	2.5	A (Tc)
Rds On (Max) @ Id, Vgs	3	Ohm @ 1.5A, 10V
Power Dissipation (Max)	50	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IRF820 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 500V minimum
Continuous Drain Current (Id) @ 25°C: 2.5A or greater
Rds On (Max) @ specified conditions: 3Ohm or lower
Power Dissipation (Max): 50W or greater
Operating Temperature Range: -55°C to 150°C (TJ) minimum
Mounting Type: Through Hole
Package / Case: TO-220-3 compatible

Substitute Classification:

Direct Manufacturer Equivalents maintain identical electrical specifications and are sourced from the original manufacturer (Vishay Siliconix). These parts carry the same base product number (IRF820) with packaging or compliance variants.

Parametrically Compatible Alternatives meet or exceed all critical electrical parameters while originating from different manufacturers. These devices satisfy the functional requirements of the IRF820 within the specified parameter ranges, though minor variations in secondary characteristics (gate charge, input capacitance) may exist within acceptable engineering tolerances.

Parameter Comparison

Parameter	IRF820	IRF820PBF	IRF820PBF-BE3	FQP3N50C-F080	STP3NK50Z
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	onsemi	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	500	500	500	500	500
Id @ 25°C (A)	2.5	2.5	2.5	1.8	2.3
Rds On (Max) @ Id, Vgs (Ohm)	3 @ 1.5A, 10V	3 @ 1.5A, 10V	3 @ 1.5A, 10V	2.5 @ 1.5A, 10V	3.3 @ 1.15A, 10V
Power Dissipation (Max) (W)	50	50	50	62	45
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Obsolete	Not For New Designs
RoHS Status	Non-compliant	ROHS3 Compliant	Not Specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement in Existing Systems:

The IRF820PBF is the primary direct equivalent. This part maintains identical electrical specifications to the IRF820 while offering Active product status and ROHS3 compliance. The IRF820PBF is available in Tube packaging with 22,899 pieces in stock, providing immediate availability for production requirements. This substitute is suitable for direct board-level replacement without circuit modification.

The IRF820PBF-BE3 is an alternative direct equivalent from Vishay Siliconix with identical electrical parameters and Active product status. This variant is available in Tube packaging with 1,029 pieces in stock. Selection between IRF820PBF and IRF820PBF-BE3 depends on packaging requirements and inventory availability.

For New Design Implementation:

The STP3NK50Z from STMicroelectronics is a parametrically compatible alternative with Active product status designation (Not For New Designs). This device meets the critical electrical requirements with 2.3A continuous drain current, 3.3Ohm maximum Rds On, and 45W power dissipation. The STP3NK50Z offers ROHS3 compliance and 10,054 pieces in stock. The slightly lower continuous drain current (2.3A versus 2.5A) and power dissipation (45W versus 50W) require circuit-level thermal analysis to confirm suitability for the intended application.

The FQP3N50C-F080 from onsemi is a parametrically compatible alternative with Obsolete product status. This device provides 1.8A continuous drain current and 62W power dissipation. The reduced continuous drain current represents a significant limitation and restricts this device to applications with lower current requirements than the IRF820 specification.

Compliance Considerations:

For applications requiring RoHS3 compliance, the IRF820PBF and STP3NK50Z are suitable selections. The original IRF820 is RoHS non-compliant and should be replaced in new designs targeting regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the IRF820PBF be used as a direct replacement for the IRF820?

A: Yes. The IRF820PBF is a direct equivalent with identical electrical specifications (500V Vdss, 2.5A Id, 3Ohm Rds On, 50W power dissipation) and compatible TO-220-3 packaging. The primary difference is product status (Active versus Obsolete) and improved RoHS3 compliance. No circuit modifications are required.

Q: What is the difference between IRF820PBF and IRF820PBF-BE3?

A: Both parts are direct equivalents from Vishay Siliconix with identical electrical specifications and TO-220-3 packaging. The designation suffix (-BE3) indicates a packaging or manufacturing variant. Selection between these parts depends on packaging format availability and inventory requirements. Both are suitable for direct replacement.

Q: Can the STP3NK50Z replace the IRF820 in all applications?

A: The STP3NK50Z meets the critical voltage and package requirements but has a lower continuous drain current (2.3A versus 2.5A) and power dissipation (45W versus 50W). Applications operating at or near the IRF820's maximum current or thermal limits require thermal analysis to confirm the STP3NK50Z is suitable. For applications with design margin below these limits, the STP3NK50Z is a valid substitute.

Q: Why is the FQP3N50C-F080 listed as a substitute if it has lower current rating?

A: The FQP3N50C-F080 is included as a parametrically compatible alternative that meets the voltage requirement (500V Vdss) and package type (TO-220-3). However, the reduced continuous drain current (1.8A versus 2.5A) limits its applicability to circuits designed for lower current operation. This device is suitable only for applications where the 1.8A rating is sufficient.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts listed are available in Through Hole TO-220-3 packaging, compatible with the IRF820 footprint. Packaging variants (Tube, Reel) differ between suppliers but do not affect electrical compatibility or board-level installation.

Q: What compliance certifications should I verify for new designs?

A: For new designs, verify RoHS3 compliance status. The IRF820PBF and STP3NK50Z are ROHS3 compliant. The original IRF820 is RoHS non-compliant and should not be used in applications requiring regulatory compliance. Verify REACH status requirements for your specific application and region.

Q: Can I use the FQP3N50C-F080 in a high-current application?

A: No. The FQP3N50C-F080 is rated for 1.8A continuous drain current, which is 28% lower than the IRF820's 2.5A rating. Applications requiring the full 2.5A specification must use IRF820PBF, IRF820PBF-BE3, or STP3NK50Z.

Q: What is the thermal difference between these devices?

A: The IRF820, IRF820PBF, and IRF820PBF-BE3 are rated for 50W power dissipation. The STP3NK50Z is rated for 45W, and the FQP3N50C-F080 is rated for 62W. Power dissipation depends on operating current and Rds On characteristics. Thermal design must account for the specific device's power rating and the application's thermal environment.

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