IRF820 N-Channel MOSFET 500V 4A Equivalent & Substitute Parts

Part Overview

The IRF820 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 500V drain-to-source voltage with 4A continuous drain current in a TO-220 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The IRF820 operates at a maximum junction temperature of 150°C and dissipates up to 80W, suitable for power switching applications requiring high voltage isolation. Due to its obsolete status, active alternatives with compatible electrical and mechanical specifications are required for new designs and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	4	A (Tc)
On-State Resistance (Rds On) @ 1.5A, 10V	3	Ω
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	17	nC
Power Dissipation (Max)	80	W (Tc)
Operating Temperature (TJ)	150	°C
Package Type	TO-220-3	Through Hole
FET Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitution of the IRF820 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 500V
On-State Resistance (Rds On) must not exceed 3Ω at specified gate and drain conditions
Gate Threshold Voltage (Vgs(th)) must be compatible with 4V nominal specification
Gate Charge (Qg) must remain within acceptable switching speed parameters

Mechanical Compatibility Requirements:

Package type must support through-hole mounting
Thermal performance must accommodate the application's power dissipation requirements

Functional Requirements:

N-Channel MOSFET technology (Metal Oxide)
Maximum junction temperature rating of 150°C or higher

The substitute parts listed below meet these criteria with variations in continuous drain current rating, power dissipation capacity, and package configuration. These variations are acceptable where application current requirements do not exceed the substitute part's rating.

Parameter Comparison

Parameter	IRF820 (Main)	IRF820APBF	IRF820PBF	IRF820LPBF
Manufacturer	STMicroelectronics	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix
Product Status	Obsolete	Active	Active	Active
Vdss (V)	500	500	500	500
Id @ 25°C (A)	4	2.5	2.5	2.5
Rds On @ 1.5A, 10V (Ω)	3	3	3	3
Vgs(th) @ 250µA (V)	4	4.5	4	4
Qg @ 10V (nC)	17	17	24	24
Ciss @ 25V (pF)	315	340	360	360
Power Dissipation (W)	80 (Tc)	50 (Tc)	50 (Tc)	50 (Tc) / 3.1 (Ta)
Operating Temperature (°C)	150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-220AB	TO-220AB	TO-262-3 (I2PAK)
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF820APBF and IRF820PBF (TO-220AB Package)

These Vishay Siliconix alternatives are direct mechanical replacements in TO-220AB through-hole packages. Both devices maintain the 500V Vdss and 3Ω Rds On specifications. The primary difference is gate charge: IRF820APBF specifies 17 nC (matching the original), while IRF820PBF specifies 24 nC, resulting in slightly slower switching characteristics.

Both parts are ROHS3 compliant and carry active product status, ensuring long-term availability. Operating temperature range extends to -55°C, providing broader environmental coverage than the original IRF820. The reduced continuous drain current rating (2.5A versus 4A) requires verification that application current demands do not exceed this limit.

IRF820LPBF (I2PAK/TO-262 Package)

This alternative provides the same electrical specifications as IRF820PBF but in an I2PAK (TO-262-3) through-hole package with long leads. The I2PAK package offers improved thermal performance with a power dissipation rating of 50W (Tc) and 3.1W (Ta). This configuration is suitable for applications requiring enhanced heat dissipation or where board layout accommodates the I2PAK footprint.

Gate charge specification is 24 nC, consistent with IRF820PBF. Maximum gate voltage is rated at ±20V (versus ±30V for other variants), which must be verified against driver circuit specifications.

Compliance and Availability

All three substitute parts are ROHS3 compliant, addressing environmental regulatory requirements that the obsolete IRF820 does not meet. IRF820PBF offers the highest inventory availability (22,899 units), followed by IRF820APBF (10,300 units) and IRF820LPBF (660 units).

Frequently Asked Questions (FAQ)

Q: Can IRF820APBF or IRF820PBF be used as direct pin-for-pin replacements for the IRF820?

A: Yes, both IRF820APBF and IRF820PBF are pin-compatible replacements in TO-220AB packages. The TO-220AB package is mechanically and electrically equivalent to the original TO-220-3 package. Verify that the application's continuous current requirement does not exceed 2.5A, as both alternatives are rated for 2.5A versus the original 4A specification.

Q: What is the difference between IRF820APBF and IRF820PBF?

A: The primary electrical difference is gate charge: IRF820APBF specifies 17 nC at 10V (matching the original IRF820), while IRF820PBF specifies 24 nC. This results in slightly faster switching for IRF820APBF. Both maintain identical Vdss (500V) and Rds On (3Ω) specifications. IRF820PBF has significantly higher inventory availability.

Q: Why does IRF820LPBF have a different package (I2PAK) and lower power dissipation rating?

A: The I2PAK (TO-262-3) package is a through-hole alternative with a different thermal path. The 3.1W (Ta) rating reflects power dissipation under ambient temperature conditions, while the 50W (Tc) rating applies to case temperature conditions, consistent with other variants. The I2PAK package may provide superior thermal performance in specific board layouts.

Q: Are all substitute parts RoHS compliant?

A: Yes, all three substitute parts (IRF820APBF, IRF820PBF, and IRF820LPBF) are ROHS3 compliant. The original IRF820 is RoHS non-compliant, making these alternatives necessary for applications subject to environmental regulations.

Q: What is the impact of the reduced continuous drain current (2.5A versus 4A) on circuit design?

A: Applications operating at continuous drain currents exceeding 2.5A cannot use these substitute parts. For applications operating at or below 2.5A, the substitutes are fully compatible. Verify actual circuit current requirements before selection.

Q: Can IRF820LPBF be used in applications designed for TO-220 packages?

A: IRF820LPBF uses an I2PAK (TO-262-3) package with long leads, which has a different footprint than TO-220. Board layout modifications are required. This alternative is suitable only where the I2PAK footprint can be accommodated or where a redesign is acceptable.

Q: What is the significance of the ±20V maximum gate voltage specification for IRF820LPBF?

A: IRF820LPBF specifies ±20V maximum gate voltage, compared to ±30V for other variants. Verify that gate driver circuits do not exceed ±20V. Most standard gate drivers operate within ±15V, making this specification compatible with typical applications.

Q: How do the operating temperature ranges compare?

A: The original IRF820 specifies a maximum junction temperature of 150°C without a minimum specification. All three substitute parts specify -55°C to 150°C operating range, providing broader environmental coverage and improved reliability in temperature-sensitive applications.

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