IRF8113GPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF8113GPBF is an N-Channel 30V MOSFET manufactured by Infineon Technologies, rated for 17.2A continuous drain current in a surface mount 8-SO package. This device is classified as Obsolete, making substitute parts necessary for ongoing production and design continuity. The HEXFET® series component operates across a temperature range of -55°C to 150°C and is suitable for applications requiring moderate current switching at 30V drain-source voltage levels.

Substiute Parts

IRF8113GPBF

Infineon TechnologiesIn Stock: 3973IRF8113GPBF Datasheet

Current PartRFQ

AO4430

Alpha & Omega Semiconductor Inc.In Stock: 150376AO4430 Datasheet

MFR RecommendedRFQ

FDS8870

onsemiIn Stock: 4785FDS8870 Datasheet

MFR RecommendedRFQ

SI4386DY-T1-GE3

Vishay SiliconixIn Stock: 3443SI4386DY-T1-GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF8113GPBF is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 30V minimum
• Package Type: 8-SOIC (0.154", 3.90mm Width)
• Mounting Type: Surface Mount
• Operating Temperature Range: -55°C to 150°C
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)

Performance Parameters for Functional Equivalence:

• Continuous Drain Current (Id): 17.2A or higher
• Rds On (Max): 5.6mOhm or lower at rated conditions
• Gate Threshold Voltage (Vgs(th)): Within ±20V gate voltage specification
• Power Dissipation: 2.5W or higher

Three substitute parts meet these criteria with varying performance characteristics and product status classifications.

Parameter Comparison

Engineering Selection Recommendations

FDS8870 (onsemi PowerTrench®)

The FDS8870 is the primary recommended substitute. It maintains full electrical compatibility with the IRF8113GPBF across all critical parameters: 30V Vdss, 18A continuous drain current, and 8-SOIC package. The FDS8870 exhibits superior on-resistance performance (4.2mOhm vs. 5.6mOhm), reducing power dissipation in switching applications. Product status is Active with ROHS3 compliance, ensuring long-term availability and regulatory alignment. Inventory availability is confirmed at 4706 pieces.

AO4430 (Alpha & Omega Semiconductor)

The AO4430 provides functional substitution with 18A current rating and 5.5mOhm on-resistance, closely matching the IRF8113GPBF electrical profile. The 8-SOIC package and 30V rating ensure mechanical and electrical compatibility. Product status is Not For New Designs, indicating limited future support. ROHS3 compliance is confirmed. Inventory availability is high at 150300 pieces. This part is suitable for legacy system maintenance where long-term design continuity is not required.

SI4386DY-T1-GE3 (Vishay Siliconix TrenchFET®)

The SI4386DY-T1-GE3 meets package and voltage specifications but operates at reduced continuous drain current (11A vs. 17.2A). On-resistance is higher at 7.0mOhm. Power dissipation is limited to 1.47W. This part is suitable only for applications where the 11A current rating is sufficient and lower power dissipation is not a design constraint. Product status is Active with ROHS3 compliance. Use this substitute only when current requirements are confirmed below 11A.

Frequently Asked Questions (FAQ)

Q: Can the FDS8870 directly replace the IRF8113GPBF without circuit modification?

A: Yes. The FDS8870 maintains identical Vdss (30V), package (8-SOIC), and operating temperature range (-55°C to 150°C). Gate threshold voltage and maximum gate voltage specifications are compatible. The improved on-resistance (4.2mOhm vs. 5.6mOhm) reduces power dissipation, which is beneficial in most applications. No circuit redesign is required.

Q: Why does the AO4430 have higher gate charge than the IRF8113GPBF?

A: Gate charge is measured at different gate voltage levels: AO4430 at 10V versus IRF8113GPBF at 4.5V. Higher measurement voltage results in higher gate charge values. This does not indicate incompatibility; it reflects different characterization conditions. Both parts operate within the ±20V gate voltage specification.

Q: Is the SI4386DY-T1-GE3 suitable for all applications using the IRF8113GPBF?

A: No. The SI4386DY-T1-GE3 is rated for 11A continuous drain current, compared to 17.2A for the IRF8113GPBF. Use this substitute only in applications where drain current does not exceed 11A. Verify application current requirements before selection.

Q: What is the significance of product status (Obsolete, Not For New Designs, Active)?

A: Product status indicates manufacturer support and availability outlook. Obsolete parts have ended production. Not For New Designs parts have limited future support. Active parts are in current production with long-term availability. For new designs, select Active status parts (FDS8870 or SI4386DY-T1-GE3). For legacy system maintenance, any substitute meeting electrical specifications is acceptable.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. FDS8870, AO4430, and SI4386DY-T1-GE3 are all ROHS3 compliant. The original IRF8113GPBF ROHS status is not specified in the provided data. All substitutes meet current environmental compliance requirements.

Q: What is the difference between 8-SO and 8-SOIC packaging?

A: Both designations refer to the same 8-pin Small Outline package with 0.154" (3.90mm) width. The terms are used interchangeably in industry documentation. All listed parts use identical package dimensions and pin configurations.

Q: Which substitute offers the best thermal performance?

A: The FDS8870 combines the lowest on-resistance (4.2mOhm) with the specified 2.5W power dissipation rating, matching the original part. The AO4430 offers 3W dissipation capability. The SI4386DY-T1-GE3 is limited to 1.47W. For thermal performance, FDS8870 is optimal for applications requiring the full 17.2A current range.