IRF8113 N-Channel MOSFET 30V 17.2A Equivalent & Substitute Parts

Part Overview

The IRF8113 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 17.2A continuous drain current at 25°C. The device is housed in an 8-SO surface mount package and features a maximum on-resistance of 5.6mOhm at rated conditions. The IRF8113 is classified as Obsolete, necessitating identification of functionally equivalent alternatives for ongoing production and maintenance applications. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging and compliance requirements.

Key Parameters

Parameter	IRF8113 Value	Unit	Substitution Relevance
FET Type	N-Channel	-	Critical - must match
Drain to Source Voltage (Vdss)	30	V	Critical - minimum rating required
Continuous Drain Current (Id) @ 25°C	17.2	A	Critical - minimum current capability
Rds On (Max) @ 17.2A, 10V	5.6	mOhm	Important - affects power dissipation
Gate Charge (Qg) @ 4.5V	36	nC	Important - switching performance
Vgs(th) @ 250µA	2.2	V	Important - gate drive compatibility
Input Capacitance (Ciss) @ 15V	2910	pF	Important - switching speed
Power Dissipation (Max)	2.5	W	Important - thermal management
Operating Temperature Range	-55 to 150	°C (TJ)	Important - environmental compatibility
Mounting Type	Surface Mount	-	Critical - PCB assembly compatibility
Package / Case	8-SOIC (0.154", 3.90mm Width)	-	Critical - footprint compatibility

Substitute Part Grouping Explanation

Substitute parts for the IRF8113 are classified based on strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: N-Channel (mandatory match)
Drain-to-Source Voltage (Vdss): 30V minimum (equal or higher acceptable)
Continuous Drain Current (Id): 17.2A minimum at 25°C (equal or higher acceptable)
Package / Case: 8-SOIC form factor with 0.154" (3.90mm) width (mandatory match for direct PCB replacement)
Mounting Type: Surface Mount (mandatory match)
Operating Temperature Range: -55°C to 150°C (TJ) minimum (equal or wider acceptable)

Secondary Compatibility Parameters:

Rds On (Max): Lower values indicate improved performance; values at or below 5.6mOhm are preferred
Gate Charge (Qg): Lower values reduce switching losses; values at or below 36nC are preferred
Vgs(th): Must be compatible with existing gate drive circuits; range 2.0V to 2.5V acceptable
Input Capacitance (Ciss): Lower values improve switching speed; values at or below 2910pF are preferred
Power Dissipation: Equal or higher ratings acceptable for thermal margin

Compliance and Status Considerations:

RoHS Compliance: ROHS3 Compliant preferred for new designs
Product Status: Active status preferred; Not For New Designs acceptable for legacy support
Moisture Sensitivity Level: MSL 1 (Unlimited) required for standard handling

Substitutes are grouped into two categories: Direct Package Equivalents (8-SOIC form factor) and Functional Equivalents (alternative packages with superior electrical performance).

Parameter Comparison

Parameter	IRF8113	IRF8113TRPBF	AO4430	FDS8870	RSS140N03TB	RXH125N03TB1
Manufacturer	Infineon	Infineon	Alpha & Omega	onsemi	Rohm	Rohm
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	17.2	17.2	18	18	14	12.5
Rds On @ Id, 10V (mOhm)	5.6	5.6	5.5	4.2	6.7	12
Qg @ 4.5V or 5V (nC)	36	36	124	112	37	12.7
Vgs(th) @ 250µA or 1mA (V)	2.2	2.2	2.5	2.5	2.5	2.5
Ciss @ 15V or 10V (pF)	2910	2910	7270	4615	3150	1000
Power Dissipation (W)	2.5	2.5	3	2.5	2	2
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Not For New Designs	Not For New Designs	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Tier 1 - Direct Electrical and Package Equivalents:

IRF8113TRPBF (Infineon Technologies) is the direct equivalent of IRF8113, maintaining identical electrical specifications (Vdss 30V, Id 17.2A, Rds On 5.6mOhm, Qg 36nC) and 8-SOIC package form factor. This part achieves ROHS3 Compliance and carries Not For New Designs status. Inventory availability is 24,199 units. This substitute provides the highest compatibility for direct PCB replacement without design modification.

Tier 2 - Electrical Equivalents with Improved Performance:

FDS8870 (onsemi) meets or exceeds all critical electrical parameters: Vdss 30V, Id 18A (exceeds 17.2A requirement), Rds On 4.2mOhm (improved from 5.6mOhm), and maintains 8-SOIC package compatibility. Gate charge is 112nC (higher than IRF8113 at 36nC), indicating increased switching losses. Product Status is Active with ROHS3 Compliance. Inventory is 4,706 units. This substitute offers superior on-resistance performance and active product support.

AO4430 (Alpha & Omega Semiconductor Inc.) provides Vdss 30V, Id 18A, Rds On 5.5mOhm, and 8-SOIC package compatibility. Gate charge is 124nC with input capacitance of 7270pF, both higher than IRF8113, indicating slower switching characteristics. Product Status is Not For New Designs with ROHS3 Compliance. Inventory is 150,300 units. This substitute is suitable for applications where switching speed is not critical.

Tier 3 - Functional Equivalents with Current Derating:

RSS140N03TB (Rohm Semiconductor) provides Vdss 30V with Id 14A (below 17.2A requirement), Rds On 6.7mOhm, and 8-SOIC package compatibility. Product Status is Active with ROHS3 Compliance. This substitute is applicable only in applications where continuous drain current requirement can be reduced to 14A or lower.

RXH125N03TB1 (Rohm Semiconductor) provides Vdss 30V with Id 12.5A (below 17.2A requirement), Rds On 12mOhm, and 8-SOIC package compatibility. Gate charge is 12.7nC (significantly lower than IRF8113), indicating superior switching performance. Product Status is Active with ROHS3 Compliance. This substitute is applicable only in applications where continuous drain current requirement can be reduced to 12.5A or lower, with benefit of reduced switching losses.

Selection Criteria Summary:

For direct replacement in existing designs: Select IRF8113TRPBF or FDS8870.

For new designs requiring active product support: Select FDS8870.

For applications with reduced current requirements: Select RSS140N03TB or RXH125N03TB1 based on acceptable current derating.

All recommended substitutes maintain -55°C to 150°C operating temperature range, MSL 1 (Unlimited) moisture sensitivity, and surface mount 8-SOIC package compatibility.

Frequently Asked Questions (FAQ)

Q1: Can IRF8113TRPBF be used as a direct replacement for IRF8113 without PCB modification?

A: Yes. IRF8113TRPBF is electrically and mechanically identical to IRF8113. Both devices feature 30V Vdss, 17.2A continuous drain current, 5.6mOhm on-resistance, and 8-SOIC package form factor. No PCB layout changes are required. The primary difference is product status (IRF8113TRPBF is Not For New Designs) and RoHS compliance (IRF8113TRPBF is ROHS3 Compliant).

Q2: What is the difference between FDS8870 and IRF8113 in terms of switching performance?

A: FDS8870 exhibits higher gate charge (112nC versus 36nC) and higher input capacitance (4615pF versus 2910pF), resulting in slower switching speed and increased gate drive power requirements. However, FDS8870 provides superior on-resistance (4.2mOhm versus 5.6mOhm), reducing conduction losses. FDS8870 is recommended for applications prioritizing low conduction losses over switching speed. IRF8113 is preferred for high-frequency switching applications.

Q3: Can AO4430 replace IRF8113 in all applications?

A: AO4430 is electrically compatible with IRF8113 for voltage and current ratings (30V, 18A). However, AO4430 exhibits significantly higher gate charge (124nC versus 36nC) and input capacitance (7270pF versus 2910pF), requiring higher gate drive power and resulting in slower switching. AO4430 is suitable for low-frequency or DC switching applications but not recommended for high-frequency PWM or resonant switching circuits.

Q4: Why do RSS140N03TB and RXH125N03TB1 have lower continuous drain current ratings than IRF8113?

A: RSS140N03TB (14A) and RXH125N03TB1 (12.5A) are designed for different application segments with lower current requirements. These devices are not direct substitutes for IRF8113 in applications requiring 17.2A continuous current. They are applicable only when circuit design permits current derating or when the application naturally operates below these current levels.

Q5: What is the significance of RoHS compliance status in substitute selection?

A: IRF8113 is RoHS non-compliant, while all recommended substitutes (IRF8113TRPBF, AO4430, FDS8870, RSS140N03TB, RXH125N03TB1) are ROHS3 Compliant. For new product designs or applications subject to RoHS regulations, ROHS3 Compliant substitutes are mandatory. For legacy system maintenance where RoHS compliance is not required, IRF8113 may continue to be used if inventory is available.

Q6: How does package compatibility affect substitute selection?

A: All recommended substitutes maintain the 8-SOIC (0.154", 3.90mm Width) package form factor, ensuring identical PCB footprint and land pattern compatibility. This allows direct component substitution without PCB redesign. Substitutes with alternative packages (such as PH6325L,115 in LFPAK56) require PCB layout modification and are not considered direct replacements.

Q7: What is the difference between Cut Tape (CT) and Tape & Reel (TR) packaging?

A: Cut Tape (CT) and Digi-Reel® packaging is suitable for manual assembly or small-volume production. Tape & Reel (TR) packaging is optimized for automated pick-and-place assembly in high-volume manufacturing. Both packaging formats contain identical electronic components. Selection depends on production volume and assembly equipment capability, not electrical performance.

Q8: Can FDS8870 be used in applications requiring the exact gate charge specification of IRF8113?

A: No. FDS8870 has gate charge of 112nC at 10V, compared to IRF8113 at 36nC at 4.5V. Applications with precise gate drive timing requirements or fixed gate drive pulse width may require circuit adjustment when substituting FDS8870. Verification of gate drive circuit performance is necessary for timing-critical applications.

Q9: What inventory considerations should guide substitute selection?

A: IRF8113 (Obsolete) has 2,052 units available. IRF8113TRPBF has 24,199 units, AO4430 has 150,300 units, and FDS8870 has 4,706 units. For long-term production support, FDS8870 (Active status) or AO4430 (higher inventory) are preferred. For immediate replacement of existing IRF8113 stock, IRF8113TRPBF provides the shortest supply chain transition.

Q10: Are there thermal management differences between IRF8113 and its substitutes?

A: Power dissipation ratings are: IRF8113 (2.5W), IRF8113TRPBF (2.5W), AO4430 (3W), FDS8870 (2.5W), RSS140N03TB (2W), RXH125N03TB1 (2W). All devices operate within -55°C to 150°C junction temperature range. Substitutes with lower on-resistance (FDS8870 at 4.2mOhm) generate less heat at rated current. Thermal design must account for actual application current levels and duty cycle, not maximum ratings alone.

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