IRF8010STRRPBF N-Channel 100V 80A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF8010STRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 80A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, which necessitates identification of active equivalent and substitute parts for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 175°C and is suitable for high-current switching applications requiring the TO-263-3 package form factor.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-Resistance (Rds On) @ 45A, 10V	15	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	120	nC
Power Dissipation (Max)	260	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Series	HEXFET®	—

Substitute Part Grouping Explanation

Substitution of the IRF8010STRRPBF is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Continuous Drain Current (Id): Must equal or exceed 80A at 25°C
Package Type: Must be D2PAK (TO-263-3) surface mount
Gate Drive Voltage: Compatible with 10V drive
Operating Temperature Range: Must support -55°C to 175°C minimum

Secondary Compatibility Factors:

On-Resistance (Rds On): Lower values indicate improved performance; values at or below 15mOhm @ 10V are preferred
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin
Moisture Sensitivity Level (MSL): Level 1 (Unlimited) preferred for manufacturing compatibility

Substitute parts are classified into two categories:

Category 1 - Manufacturer Recommended (MFR Recommended): Parts explicitly recommended by manufacturers as direct replacements, offering active product status and full compliance certifications.

Category 2 - Parametric Equivalents: Parts meeting all critical electrical and mechanical parameters with identical or superior specifications, maintaining functional compatibility.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Pd Max (W)	Status	Package
IRF8010STRRPBF	Infineon	100	80	15 @ 45A	120	260	Obsolete	D2PAK
IRF8010STRLPBF	Infineon	100	80	15 @ 45A	120	260	Active	D2PAK
IPB083N10N3GATMA1	Infineon	100	80	8.3 @ 73A	55	125	Active	D2PAK
IPB50N10S3L16ATMA1	Infineon	100	50	15.4 @ 50A	64	100	Active	D2PAK
NVB6411ANT4G	onsemi	100	77	14 @ 72A	100	217	Obsolete	D2PAK
PSMN013-100BS,118	Nexperia	100	68	13.9 @ 15A	59	170	Active	D2PAK
PSMN015-100B,118	Nexperia	100	75	15 @ 25A	90	300	Active	D2PAK
PSMN016-100BS,118	Nexperia	100	57	16 @ 15A	49	148	Active	D2PAK
STB40NF10LT4	STMicroelectronics	100	40	33 @ 20A	64	150	Active	D2PAK
STB80NF10T4	STMicroelectronics	100	80	15 @ 40A	182	300	Active	D2PAK

Engineering Selection Recommendations

Direct Replacement (Highest Compatibility):

IRF8010STRLPBF is the primary direct replacement. This part maintains identical electrical specifications to the obsolete IRF8010STRRPBF while offering active product status. Both parts are manufactured by Infineon Technologies within the HEXFET® series and share the same D2PAK package, gate drive requirements, and thermal characteristics. RoHS3 compliance and REACH unaffected status ensure regulatory alignment.

Manufacturer-Recommended Alternatives:

STB80NF10T4 (STMicroelectronics) provides full parametric equivalence with 80A continuous drain current and 100V Vdss rating. This part delivers superior power dissipation (300W vs. 260W) and maintains identical on-resistance at 10V drive. The STripFET™ II series designation indicates advanced process technology. Active product status and full compliance certifications support long-term availability.

PSMN015-100B,118 (Nexperia) offers 75A continuous drain current with superior power dissipation (300W) and lower on-resistance characteristics. The TrenchMOS™ series technology provides enhanced switching performance. This part is suitable for applications where the 80A specification can be relaxed to 75A without functional impact.

Current-Reduced Alternatives:

IPB083N10N3GATMA1 (Infineon OptiMOS™) delivers 80A rating with significantly improved on-resistance (8.3mOhm vs. 15mOhm) and reduced gate charge (55nC vs. 120nC). Lower power dissipation (125W) indicates superior efficiency. This part is recommended for designs prioritizing switching speed and thermal performance over maximum power handling.

IPB50N10S3L16ATMA1 (Infineon OptiMOS™) provides 50A continuous current with comparable on-resistance and reduced gate charge. This part is suitable for applications where 50A current capacity is sufficient, offering improved efficiency characteristics.

Lower Current Alternatives:

STB40NF10LT4 (STMicroelectronics STripFET™ II) is rated for 40A continuous current. This part is applicable only to designs where current requirements do not exceed 40A. Higher on-resistance (33mOhm) and lower gate charge (64nC) indicate different switching characteristics.

PSMN013-100BS,118 and PSMN016-100BS,118 (Nexperia) provide 68A and 57A ratings respectively. These parts are suitable for reduced-current applications and offer active product status with full compliance.

Compliance and Certification:

All recommended active substitutes maintain RoHS3 compliance and REACH unaffected status. Automotive-grade qualification (AEC-Q101) is available for NVB6411ANT4G if automotive applications require this certification, though this part is obsolete.

Frequently Asked Questions (FAQ)

Q: Can IRF8010STRLPBF directly replace IRF8010STRRPBF without circuit modification?

A: Yes. IRF8010STRLPBF is a direct parametric equivalent with identical electrical specifications, gate drive requirements, and D2PAK package. The only difference is product status (active vs. obsolete). No circuit modifications are required.

Q: What is the difference between IRF8010STRRPBF and IRF8010STRLPBF?

A: Both parts are manufactured by Infineon Technologies with identical specifications. The difference lies in packaging designation: STRRPBF indicates Tape & Reel packaging in the obsolete product line, while STRLPBF indicates the active product line equivalent. Electrical performance is identical.

Q: Can STB80NF10T4 replace IRF8010STRRPBF in all applications?

A: STB80NF10T4 meets all critical electrical parameters (100V Vdss, 80A Id, 15mOhm Rds On @ 10V) and D2PAK package requirements. The primary difference is gate charge (182nC vs. 120nC), which affects switching speed. Applications sensitive to switching frequency may require circuit evaluation. Power dissipation is superior (300W vs. 260W).

Q: Why does IPB083N10N3GATMA1 have lower power dissipation than IRF8010STRRPBF despite identical current rating?

A: IPB083N10N3GATMA1 represents newer OptiMOS™ technology with improved on-resistance (8.3mOhm vs. 15mOhm) and reduced gate charge (55nC vs. 120nC). Lower conduction losses and switching losses result in lower overall power dissipation under typical operating conditions.

Q: Is PSMN015-100B,118 suitable if my application requires 80A continuous current?

A: PSMN015-100B,118 is rated for 75A continuous drain current, which is 5A below the 80A requirement. This part is suitable only if circuit design can accommodate 75A operation or if actual current demand is below 75A. For applications requiring full 80A capability, select STB80NF10T4, IRF8010STRLPBF, or IPB083N10N3GATMA1.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (55nC in IPB083N10N3GATMA1 vs. 120nC in IRF8010STRRPBF) reduces switching losses and allows higher switching frequencies. Higher gate charge (182nC in STB80NF10T4) may require stronger gate drive circuits but does not affect DC performance.

Q: Are all substitute parts available in the same D2PAK package?

A: Yes. All substitute parts listed are available in D2PAK (TO-263-3) surface mount package with identical pin configuration and PCB footprint compatibility. No layout modifications are required for package substitution.

Q: Which substitute part offers the best thermal performance?

A: PSMN015-100B,118 and STB80NF10T4 both offer 300W maximum power dissipation, compared to 260W for IRF8010STRRPBF. IPB083N10N3GATMA1 offers superior efficiency through lower on-resistance and gate charge, resulting in lower actual power dissipation under operating conditions despite lower rated maximum dissipation.

Q: Can I use STB40NF10LT4 as a substitute?

A: STB40NF10LT4 is suitable only if your application current requirement does not exceed 40A. This part is rated for 40A continuous drain current, which is 50% of the IRF8010STRRPBF specification. Use this part only for reduced-current applications.

Q: What compliance certifications apply to all active substitute parts?

A: All active substitute parts maintain RoHS3 compliance and REACH unaffected status. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no moisture sensitivity restrictions. Automotive-grade qualification (AEC-Q101) is available only for NVB6411ANT4G, which is obsolete.

Q: How do I select between multiple active substitutes?

A: Selection depends on application priorities: (1) For direct replacement with active status, use IRF8010STRLPBF. (2) For improved efficiency and switching performance, use IPB083N10N3GATMA1. (3) For maximum thermal margin, use STB80NF10T4 or PSMN015-100B,118. (4) For reduced current applications, use PSMN013-100BS,118 or PSMN016-100BS,118. (5) For 40A applications only, use STB40NF10LT4.

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