IRF8010SPBF N-Channel MOSFET 100V 80A Equivalent & Substitute Parts

Part Overview

The IRF8010SPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 80A continuous drain current in a D2PAK surface mount package. This device is part of the HEXFET® series and is designed for high-current switching applications requiring efficient power dissipation up to 260W at case temperature.

The IRF8010SPBF is discontinued at DiGi Electronics. Equivalent and substitute parts are available from multiple manufacturers including STMicroelectronics, Nexperia USA Inc., and IXYS, offering comparable electrical performance within the same D2PAK package family while maintaining active product status and full compliance certifications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-State Resistance (Rds On) @ 40A, 10V	15	mOhm
Gate Charge (Qg) @ 10V	120	nC
Power Dissipation (Max)	260	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Gate-Source Voltage (Vgs Max)	±20	V

Substitute Part Grouping Explanation

Substitution eligibility for the IRF8010SPBF is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): 80A or greater at 25°C
Package Type: D2PAK (TO-263-3) surface mount configuration
Gate-Source Voltage (Vgs): ±20V or greater
Operating Temperature Range: -55°C to 175°C or wider

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Comparable performance at rated current and gate voltage
Gate Charge (Qg): Affects switching speed and drive circuit requirements
Power Dissipation: Thermal management capability

Parts meeting all primary criteria are classified as direct equivalents. Parts exceeding voltage or current ratings while maintaining package compatibility are classified as higher-performance substitutes suitable for the same application space.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Status
IRF8010SPBF	Infineon	100	80	15 @ 40A, 10V	120 @ 10V	260	D2PAK	Discontinued
STB80NF10T4	STMicroelectronics	100	80	15 @ 40A, 10V	182 @ 10V	300	D2PAK	Active
IXTA80N10T	IXYS	100	80	14 @ 25A, 10V	60 @ 10V	230	TO-263AA	Active
PSMN015-100B,118	Nexperia USA Inc.	100	75	15 @ 25A, 10V	90 @ 10V	300	D2PAK	Active
PSMN013-100BS,118	Nexperia USA Inc.	100	68	13.9 @ 15A, 10V	59 @ 10V	170	D2PAK	Active
STB100N10F7	STMicroelectronics	100	80	8 @ 40A, 10V	61 @ 10V	150	D2PAK	Active
IPB123N10N3GATMA1	Infineon	100	58	12.3 @ 46A, 10V	35 @ 10V	94	PG-TO263-3	Active
IPB144N12N3GATMA1	Infineon	120	56	14.4 @ 56A, 10V	49 @ 10V	107	PG-TO263-3	Active
IPB50N10S3L16ATMA1	Infineon	100	50	15.4 @ 50A, 10V	64 @ 10V	100	PG-TO263-3	Active
PSMN016-100BS,118	Nexperia USA Inc.	100	57	16 @ 15A, 10V	49 @ 10V	148	D2PAK	Active
STB40NF10LT4	STMicroelectronics	100	40	33 @ 20A, 10V	64 @ 4.5V	150	D2PAK	Active

Engineering Selection Recommendations

Direct Equivalents (100V, 80A Rating):

STB80NF10T4 and IXTA80N10T are the primary direct equivalents to the IRF8010SPBF. Both devices maintain the 100V/80A electrical specification and D2PAK package configuration. STB80NF10T4 offers identical on-state resistance and higher power dissipation capability (300W vs. 260W). IXTA80N10T provides superior on-state resistance (14mOhm vs. 15mOhm) with lower gate charge (60nC vs. 120nC), resulting in faster switching characteristics. Both parts carry active product status with full RoHS3 compliance and REACH unaffected certification.

High-Performance Substitutes (100V, 80A Equivalent or Higher):

STB100N10F7 delivers the lowest on-state resistance (8mOhm) among all candidates, enabling superior efficiency in high-current applications. This part maintains 100V/80A ratings with active status and full compliance certifications. The reduced on-state resistance results in lower power dissipation during conduction, offsetting the lower absolute power rating (150W) through improved thermal efficiency.

Current-Reduced Alternatives (100V, 50-75A Range):

PSMN015-100B,118 (75A), PSMN013-100BS,118 (68A), and PSMN016-100BS,118 (57A) are suitable for applications where the full 80A continuous current is not required. These parts maintain 100V voltage rating and D2PAK packaging. PSMN015-100B,118 offers the highest current capacity in this group (75A) with 300W power dissipation. All three parts carry active status with full compliance.

Lower-Current Substitute:

STB40NF10LT4 is suitable only for applications requiring 40A or less continuous current. This part is included due to its presence in the original substitute list but does not meet the primary 80A current criterion.

Voltage-Elevated Substitute:

IPB144N12N3GATMA1 operates at 120V drain-to-source voltage, providing additional voltage margin for applications with transient overvoltage conditions. Current rating is 56A, making this suitable for lower-current 100V applications requiring enhanced voltage headroom.

Lower-Current Infineon Alternatives:

IPB123N10N3GATMA1 (58A) and IPB50N10S3L16ATMA1 (50A) are active Infineon OptiMOS™ series devices maintaining the same manufacturer lineage as the discontinued IRF8010SPBF. These parts are suitable for applications with reduced current requirements.

All recommended substitutes maintain the operating temperature range of -55°C to 175°C, RoHS3 compliance, and REACH unaffected status. Selection should be based on specific application current requirements, thermal management capability, and switching speed requirements.

Frequently Asked Questions (FAQ)

Q: Can STB80NF10T4 directly replace IRF8010SPBF without circuit modification?

A: STB80NF10T4 is a direct electrical equivalent with identical 100V/80A ratings and D2PAK packaging. The higher gate charge (182nC vs. 120nC) may require verification of gate drive circuit capability, but no circuit modification is necessary for basic functionality. Both parts operate across the same temperature range with identical voltage and current specifications.

Q: What is the advantage of IXTA80N10T over STB80NF10T4?

A: IXTA80N10T provides lower gate charge (60nC vs. 182nC) and superior on-state resistance (14mOhm vs. 15mOhm). Lower gate charge enables faster switching transitions and reduced gate drive power consumption. Superior on-state resistance reduces conduction losses. These characteristics make IXTA80N10T preferable for high-frequency switching applications or thermally constrained designs.

Q: Why does STB100N10F7 have lower power dissipation rating than IRF8010SPBF despite identical current rating?

A: STB100N10F7 achieves superior on-state resistance (8mOhm vs. 15mOhm), resulting in lower conduction losses. The lower absolute power rating (150W vs. 260W) reflects the device's thermal design rather than performance limitation. In practical applications, the superior on-state resistance typically results in lower actual power dissipation during operation.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts use D2PAK or equivalent TO-263-3 surface mount packages. Infineon OptiMOS™ parts use the designation PG-TO263-3, which is mechanically and electrically compatible with standard D2PAK. IXYS uses TO-263AA designation. All packages are functionally equivalent for PCB layout and thermal management purposes.

Q: Can PSMN015-100B,118 be used in applications requiring 80A continuous current?

A: No. PSMN015-100B,118 is rated for 75A continuous current at 25°C. Using this part in an 80A application exceeds its continuous current specification and may result in thermal runaway or device failure. This part is suitable only for applications requiring 75A or less.

Q: What is the significance of the different gate charge values among substitutes?

A: Gate charge (Qg) determines the energy required to switch the device on and off. Higher gate charge (IRF8010SPBF at 120nC, STB80NF10T4 at 182nC) requires more gate drive energy and results in slower switching transitions. Lower gate charge (IXTA80N10T at 60nC, STB100N10F7 at 61nC) enables faster switching with reduced gate drive power. Selection depends on gate drive circuit capability and application switching frequency requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry RoHS3 compliance and REACH unaffected status, matching the compliance profile of the IRF8010SPBF. This ensures compatibility with environmental and regulatory requirements across all markets.

Q: Which substitute offers the best thermal performance?

A: STB100N10F7 provides the lowest on-state resistance (8mOhm), resulting in the lowest conduction losses and superior thermal performance in high-current applications. IXTA80N10T offers the second-best on-state resistance (14mOhm). Both parts are suitable for thermally constrained designs where minimizing power dissipation is critical.

Q: Can IPB144N12N3GATMA1 be used in 100V applications?

A: Yes. IPB144N12N3GATMA1 is rated for 120V drain-to-source voltage, which exceeds the 100V requirement. This part is suitable for 100V applications and provides additional voltage margin for transient overvoltage protection. However, the 56A current rating is lower than the IRF8010SPBF, limiting its use to applications requiring 56A or less.

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