IRF7905PBF Equivalent & Substitute Parts

Part Overview

The IRF7905PBF is a dual N-channel MOSFET array manufactured by Infineon Technologies, configured as a 2N-channel device in an 8-SOIC surface mount package. This component features a 30V drain-to-source voltage rating with continuous drain current capabilities of 7.8A and 8.9A, and is part of the HEXFET® series. The IRF7905PBF is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute components must maintain compatibility across electrical specifications, package dimensions, and thermal characteristics to ensure direct replacement capability in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	7.8, 8.9	A
Rds On (Max) @ Id, Vgs	21.8	mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id	2.25	V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	6.9	nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	600	pF @ 15V
Power - Max	2	W
Operating Temperature Range	-55 to 150	°C (TJ)
Configuration	2 N-Channel (Dual)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount
FET Feature	Logic Level Gate

Substitute Part Grouping Explanation

Substitution of the IRF7905PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 30V
Configuration: Must be 2 N-Channel (Dual) in 8-SOIC package
Package / Case: Must be 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Must be Surface Mount
Operating Temperature Range: Must support -55°C to 150°C (TJ)

Secondary Compatibility Parameters:

Current - Continuous Drain (Id) @ 25°C: Substitute must meet or exceed 7.8A minimum
Rds On (Max) @ Id, Vgs: Substitute must not exceed 22mOhm @ comparable current and voltage
Vgs(th) (Max) @ Id: Substitute must not exceed 3V @ 250µA or equivalent specification
Gate Charge (Qg) (Max) @ Vgs: Substitute must not exceed 23nC @ comparable voltage
Input Capacitance (Ciss) (Max) @ Vds: Substitute must not exceed 1190pF @ 15V
Power - Max: Substitute must support minimum 2W dissipation

Substitute parts are grouped based on product status (Active preferred over Obsolete or Not For New Designs) and compliance certifications (RoHS3 Compliant status preferred). All substitute parts listed maintain the same 8-SOIC package footprint and surface mount configuration, ensuring mechanical compatibility with existing PCB layouts.

Parameter Comparison

Parameter	IRF7905PBF	BSO220N03MDGXUMA1	NTMD4820NR2G	SH8K4TB1	SH8KA4TB	SI4804CDY-T1-E3	SI4816BDY-T1-GE3
Manufacturer	Infineon	Infineon	onsemi	Rohm	Rohm	Vishay Siliconix	Vishay Siliconix
Vdss (V)	30	30	30	30	30	30	30
Id @ 25°C (A)	7.8, 8.9	6	4.9	9	9	8	5.8, 8.2
Rds On (Max) (mOhm)	21.8	22	20	17	21.4	22	18.5
Vgs(th) (Max) (V)	2.25	2.1	3	2.5	2.5	2.4	3
Qg (Max) (nC)	6.9	10	7.7	21	15.5	23	10
Ciss (Max) (pF)	600	800	940	1190	640	865	Not specified
Power - Max (W)	2	1.4	0.75	2	3	3.1	1, 1.25
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	to 150	-55 to 150	-55 to 150	-55 to 150
Configuration	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Dual)	2 N-Channel (Half Bridge)
Package	8-SOIC	8-SOIC (PG-DSO-8)	8-SOIC	8-SOIC (8-SOP)	8-SOIC (8-SOP)	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Active	Active	Not For New Designs	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	3 (168 Hours)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitute (Highest Compatibility):

SH8K4TB1 (Rohm Semiconductor) and SH8KA4TB (Rohm Semiconductor) provide the closest electrical match to the IRF7905PBF. Both devices maintain the 30V Vdss rating, support 9A continuous drain current (exceeding the original 7.8A/8.9A specification), and are housed in the same 8-SOIC package footprint. SH8K4TB1 is classified as Active product status with ROHS3 compliance and MSL 1 rating, making it the preferred choice for new production. SH8KA4TB is classified as Not For New Designs but remains available for legacy system support.

Secondary Substitutes (Active Status, Full Compliance):

SI4804CDY-T1-E3 (Vishay Siliconix) is an Active product with 8A continuous drain current, 30V Vdss, and 3.1W power dissipation capability. This device meets all primary substitution criteria and carries ROHS3 compliance with MSL 1 rating.

BSO220N03MDGXUMA1 (Infineon Technologies) is an Active product from the same manufacturer as the original part. It maintains 30V Vdss and 6A continuous drain current with 1.4W power dissipation. This device carries ROHS3 compliance but has MSL 3 rating (168 Hours), requiring controlled moisture handling during storage and assembly.

Tertiary Substitutes (Active Status, Reduced Current Rating):

NTMD4820NR2G (onsemi) is an Active product with 30V Vdss and 4.9A continuous drain current. This device has the lowest current rating among substitutes and 750mW power dissipation, suitable only for applications where the reduced current capacity is acceptable. It carries ROHS3 compliance and MSL 1 rating.

SI4816BDY-T1-GE3 (Vishay Siliconix) is an Active product configured as a 2 N-Channel Half Bridge (not standard Dual configuration) with 5.8A/8.2A continuous drain current and 1W/1.25W power dissipation. This device is suitable for half-bridge topologies but may require circuit redesign for standard dual-channel applications.

Compliance and Availability Considerations:

All recommended Active substitutes carry ROHS3 compliance and REACH Unaffected status. MSL 1 rated devices (SH8K4TB1, NTMD4820NR2G, SI4804CDY-T1-E3, SI4816BDY-T1-GE3) are preferred for standard manufacturing environments. BSO220N03MDGXUMA1 with MSL 3 rating requires bake-out procedures before assembly. Product status prioritization: Active > Not For New Designs > Obsolete.

Frequently Asked Questions (FAQ)

Q: Can I directly replace IRF7905PBF with any of the listed substitutes without circuit modification?

A: Direct replacement is possible only if the substitute meets all primary substitution criteria: 30V Vdss, 2 N-Channel Dual configuration, 8-SOIC package, and continuous drain current rating of at least 7.8A. SH8K4TB1, SH8KA4TB, SI4804CDY-T1-E3, and BSO220N03MDGXUMA1 meet these requirements. SI4816BDY-T1-GE3 has a Half Bridge configuration and may require circuit redesign. NTMD4820NR2G has reduced current rating (4.9A) and is suitable only if your application current requirement is below this threshold.

Q: What is the difference between the 8-SOIC and 8-SOP package designations listed for some substitutes?

A: The 8-SOIC (Small Outline Integrated Circuit) and 8-SOP (Small Outline Package) designations refer to the same physical package footprint: 0.154" width with 3.90mm body width. These are equivalent package types suitable for the same PCB layout. The different nomenclature reflects manufacturer naming conventions but does not affect mechanical compatibility.

Q: Why do some substitutes have lower continuous drain current ratings than the original IRF7905PBF?

A: NTMD4820NR2G (4.9A) and SI4816BDY-T1-GE3 (5.8A/8.2A) have reduced current ratings due to different die designs and thermal management characteristics. These devices are suitable only for applications where the maximum continuous drain current requirement does not exceed their rated values. For applications requiring the full 7.8A to 8.9A capability, use SH8K4TB1, SH8KA4TB, SI4804CDY-T1-E3, or BSO220N03MDGXUMA1.

Q: What does MSL (Moisture Sensitivity Level) rating mean for component selection?

A: MSL rating indicates the maximum time a component can be exposed to ambient conditions (typically 30°C, 85% relative humidity) before requiring a bake-out procedure. MSL 1 (Unlimited) devices like SH8K4TB1, NTMD4820NR2G, SI4804CDY-T1-E3, and SI4816BDY-T1-GE3 require no special moisture handling. BSO220N03MDGXUMA1 with MSL 3 (168 Hours) must be baked at 125°C for 24 hours if exposed to ambient conditions for more than 168 hours before assembly.

Q: Are all listed substitutes RoHS3 compliant?

A: Yes, all substitute parts listed carry ROHS3 Compliant status. The original IRF7905PBF does not specify RoHS status. All substitutes also carry REACH Unaffected status, indicating no conflict with REACH restricted substance regulations.

Q: Which substitute offers the best thermal performance for high-power applications?

A: SH8KA4TB provides the highest power dissipation rating at 3W, followed by SI4804CDY-T1-E3 at 3.1W. Both devices support the full 9A and 8A continuous drain current respectively and maintain 30V Vdss. For applications requiring maximum thermal headroom, SI4804CDY-T1-E3 is preferred due to Active product status and MSL 1 rating.

Q: Can I use SI4816BDY-T1-GE3 as a direct replacement if my circuit uses a half-bridge topology?

A: SI4816BDY-T1-GE3 is configured as a 2 N-Channel Half Bridge, which differs from the standard Dual configuration of the IRF7905PBF. This device is suitable for half-bridge applications but requires verification that your circuit topology matches the half-bridge configuration. The device specifications (5.8A/8.2A, 30V Vdss, 8-SOIC package) are otherwise compatible.

Q: What is the inventory status of these substitutes?

A: Inventory quantities provided are: BSO220N03MDGXUMA1 (15,901 pcs), NTMD4820NR2G (15,365 pcs), SH8K4TB1 (3,527 pcs), SH8KA4TB (1,341 pcs), SI4804CDY-T1-E3 (3,700 pcs), SI4816BDY-T1-GE3 (1,779 pcs). These quantities reflect current stock levels and are subject to change. Verify availability with your component supplier before finalizing procurement decisions.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message