IRF7904PBF Equivalent & Substitute Parts

Part Overview

The IRF7904PBF is a dual N-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications requiring 30V operation with logic level gate control. This device integrates two N-channel MOSFETs in a single 8-SOIC package, providing compact solutions for switching and amplification circuits.

The IRF7904PBF carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IRF7904PBF

Infineon TechnologiesIn Stock: 2337IRF7904PBF Datasheet

Current PartRFQ

IRF7904TRPBF

Infineon TechnologiesIn Stock: 2970IRF7904TRPBF Datasheet

DirectRFQ

SI4214DDY-T1-GE3

Vishay SiliconixIn Stock: 45364SI4214DDY-T1-GE3 Datasheet

MFR RecommendedRFQ

SI4808DY-T1-E3

Vishay SiliconixIn Stock: 2585SI4808DY-T1-E3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7904PBF is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Drain to Source Voltage (Vdss) must equal or exceed 30V
• Continuous Drain Current (Id) must meet or exceed 7.6A minimum specification
• Rds On (on-state resistance) must not significantly exceed 16.2mOhm to maintain thermal performance
• Gate threshold voltage (Vgs(th)) must be compatible with logic level gate drive circuits
• Operating temperature range must span -55°C to 150°C

Mechanical Compatibility Requirements:

• Package must be 8-SOIC (0.154", 3.90mm Width) for PCB layout compatibility
• Configuration must be 2 N-Channel dual MOSFET array
• Surface mount technology required
• Mounting footprint must be identical or directly compatible

Compliance Requirements:

• RoHS3 compliance preferred for new designs
• REACH compliance status must be acceptable
• Moisture Sensitivity Level (MSL) must be 1 (Unlimited) or equivalent

Substitute parts are grouped into two categories: direct manufacturer equivalents from Infineon Technologies and manufacturer-recommended alternatives from Vishay Siliconix that meet all electrical and mechanical parameters within acceptable tolerances.

Parameter Comparison

Engineering Selection Recommendations

Direct Equivalent (Infineon Technologies):

IRF7904TRPBF is the direct equivalent to IRF7904PBF, differing only in packaging format (Tape & Reel versus bulk). This part maintains identical electrical specifications including Vdss, Id, Rds On, and gate characteristics. IRF7904TRPBF carries ROHS3 compliance and is designated "Not For New Designs," indicating it remains available for legacy system support but is not recommended for new product development. This part is suitable for direct replacement in existing production lines where component availability is the primary concern.

Manufacturer-Recommended Alternatives (Vishay Siliconix):

SI4214DDY-T1-GE3 is an active product offering superior electrical performance with 8.5A continuous drain current (exceeding the 7.6A minimum), higher power dissipation capability (3.1W), and lower input capacitance (660pF). The Rds On specification of 19.5mOhm is slightly higher than the IRF7904PBF but remains within acceptable operating margins. This device is ROHS3 compliant and carries Active product status, making it suitable for new designs requiring long-term supply assurance.

SI4808DY-T1-E3 is an alternative for applications with lower current requirements. With 5.7A continuous drain current and 1.1W power dissipation, this device is suitable for designs where the full 7.6A capability of the IRF7904PBF is not required. The Rds On specification of 22mOhm and lower gate threshold voltage (800mV minimum) represent trade-offs that must be evaluated against specific circuit requirements. This device is ROHS3 compliant and carries Active product status.

Selection Criteria:

For legacy system support and direct replacement: IRF7904TRPBF

For new designs requiring maximum performance and supply continuity: SI4214DDY-T1-GE3

For applications with reduced current requirements: SI4808DY-T1-E3

All substitute parts maintain the required 8-SOIC package format, dual N-channel configuration, logic level gate operation, and -55°C to 150°C operating temperature range. All recommended alternatives are ROHS3 compliant and carry Active or Not For New Designs status, ensuring regulatory compliance and supply availability.

Frequently Asked Questions (FAQ)

Q: Can IRF7904TRPBF be used as a direct replacement for IRF7904PBF?

A: Yes. IRF7904TRPBF is electrically and mechanically identical to IRF7904PBF. The only difference is packaging format: IRF7904PBF is supplied in bulk packaging, while IRF7904TRPBF is supplied in Tape & Reel format. Both parts have identical electrical specifications, pin configuration, and 8-SOIC package dimensions. Selection between these two depends on procurement and assembly requirements rather than technical compatibility.

Q: What are the key differences between SI4214DDY-T1-GE3 and the original IRF7904PBF?

A: SI4214DDY-T1-GE3 offers higher continuous drain current (8.5A versus 7.6A), greater power dissipation capability (3.1W versus 2W), and lower input capacitance (660pF versus 910pF). The Rds On is slightly higher at 19.5mOhm compared to 16.2mOhm. Gate charge is doubled (22nC versus 11nC), which may affect switching speed in some applications. SI4214DDY-T1-GE3 is an Active product with ROHS3 compliance, providing superior long-term availability compared to the Obsolete IRF7904PBF.

Q: Is SI4808DY-T1-E3 suitable for all applications using IRF7904PBF?

A: No. SI4808DY-T1-E3 has a lower continuous drain current specification (5.7A versus 7.6A) and reduced power dissipation capability (1.1W versus 2W). This device is suitable only for applications where the circuit current requirements do not exceed 5.7A. The lower gate threshold voltage (800mV minimum versus 2.25V) may also require circuit redesign for proper gate drive compatibility. Verify application current requirements before selecting this substitute.

Q: Do all substitute parts maintain the same package footprint?

A: Yes. All substitute parts use the 8-SOIC package with 0.154" width and 3.90mm body width. PCB layout and footprint remain identical across IRF7904PBF, IRF7904TRPBF, SI4214DDY-T1-GE3, and SI4808DY-T1-E3. No PCB redesign is required for package compatibility.

Q: Are all substitute parts RoHS compliant?

A: IRF7904PBF RoHS status is not specified in available documentation. IRF7904TRPBF, SI4214DDY-T1-GE3, and SI4808DY-T1-E3 are all ROHS3 compliant. For applications requiring RoHS compliance, use IRF7904TRPBF or the Vishay alternatives.

Q: What is the difference between "Dual" and "Half Bridge" configuration?

A: Both configurations contain two N-channel MOSFETs in a single package. "Dual" configuration provides two independent MOSFETs with separate gate, drain, and source connections. "Half Bridge" configuration connects the source of one MOSFET to the drain of the other, creating a complementary switching pair. IRF7904PBF uses Dual configuration, while IRF7904TRPBF uses Half Bridge configuration. Verify internal connection topology against your circuit schematic before substitution.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Gate charge and input capacitance differences affect switching speed. IRF7904PBF has lower gate charge (11nC) and lower input capacitance (910pF) compared to SI4214DDY-T1-GE3 (22nC, 660pF). For high-frequency applications, evaluate switching frequency requirements and gate drive capability. Lower gate charge enables faster switching but may require different gate drive circuit design.

Q: What is the Moisture Sensitivity Level (MSL) for these parts?

A: All specified parts carry MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. These parts can be stored and handled without special moisture control measures, simplifying supply chain management and assembly processes.