IRF7855PBF Equivalent & Substitute Parts

Part Overview

The IRF7855PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 12A continuous drain current. This device is housed in an 8-SO surface mount package and is designed for general-purpose switching applications requiring moderate power dissipation up to 2.5W. The IRF7855PBF is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substiute Parts

IRF7855PBF

Infineon TechnologiesIn Stock: 2053IRF7855PBF Datasheet

Current PartRFQ

FDS5672

onsemiIn Stock: 15638FDS5672 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7855PBF is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

• FET Type: N-Channel topology
• Drain to Source Voltage (Vdss): 60V minimum rating
• Continuous Drain Current (Id): 12A minimum at 25°C
• Power Dissipation: 2.5W or greater
• Operating Temperature Range: -55°C to 150°C minimum
• Gate Voltage (Vgs): ±20V maximum rating

Mechanical Equivalence Criteria:

• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Compliance Criteria:

• RoHS3 Compliant
• REACH Unaffected status

The FDS5672 from onsemi meets all electrical and mechanical requirements for direct substitution with the IRF7855PBF.

Parameter Comparison

Engineering Selection Recommendations

The FDS5672 is a direct substitute for the IRF7855PBF based on electrical and mechanical parameter equivalence. Both devices share identical voltage and current ratings, operate across the same temperature range, and are housed in the same 8-SOIC package footprint. Both parts maintain ROHS3 compliance and REACH unaffected status.

The FDS5672 is currently active in production with 15,569 units in stock, providing immediate availability compared to the discontinued IRF7855PBF. The FDS5672 exhibits marginally higher on-resistance (10 mOhm versus 9.4 mOhm) and gate charge (45 nC versus 39 nC), which remain within acceptable tolerances for equivalent circuit performance in switching applications rated for these specifications.

Pin-to-pin compatibility and identical package dimensions ensure direct PCB layout compatibility without redesign requirements.

Frequently Asked Questions (FAQ)

Q: Can the FDS5672 be used as a direct replacement for the IRF7855PBF without circuit modification?

A: Yes. The FDS5672 is electrically and mechanically equivalent to the IRF7855PBF. Both devices share identical voltage ratings (60V Vdss), current ratings (12A Id), power dissipation (2.5W), and package geometry (8-SOIC). No circuit modifications are required for substitution.

Q: What are the differences between the IRF7855PBF and FDS5672?

A: The primary differences are manufacturer (Infineon versus onsemi) and minor parameter variations. The FDS5672 exhibits 0.6 mOhm higher on-resistance and 6 nC higher gate charge. These differences do not affect functional equivalence for applications designed to the IRF7855PBF specifications.

Q: Are both parts available in the same package?

A: Yes. Both the IRF7855PBF and FDS5672 are supplied in 8-SOIC packages with identical dimensions (0.154" width, 3.90mm). PCB footprints are directly compatible.

Q: Do both parts meet the same compliance standards?

A: Yes. Both the IRF7855PBF and FDS5672 are ROHS3 compliant and REACH unaffected, meeting identical environmental and regulatory requirements.

Q: What is the product status of each part?

A: The IRF7855PBF is discontinued at DiGi Electronics. The FDS5672 is active in production with current inventory availability.

Q: Are there any thermal or operating temperature differences?

A: No. Both devices operate across the identical temperature range of -55°C to 150°C (TJ).