IRF7842PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7842PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 18A continuous drain current at 25°C. This device is part of the HEXFET® series and is designed for surface mount applications in 8-SO packaging. The IRF7842PBF is currently discontinued at DiGi Electronics, making identification of equivalent substitute parts essential for ongoing design support and procurement.

Substitute parts must maintain compatibility across critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and thermal performance specifications. Surface mount package compatibility and RoHS3 compliance are additional selection criteria.

Substiute Parts

IRF7842PBF

Infineon TechnologiesIn Stock: 1050IRF7842PBF Datasheet

Current PartRFQ

DMN3007LSS-13

Diodes IncorporatedIn Stock: 17908DMN3007LSS-13 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution logic for the IRF7842PBF is based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute parts must support a minimum Vdss rating equal to or greater than 40V to ensure safe operation under the same voltage conditions.

Current Capability: Substitute parts must provide continuous drain current (Id) at 25°C equal to or greater than 18A to maintain equivalent current-handling capacity.

On-Resistance Performance: Rds On characteristics must be comparable to ensure similar power dissipation and thermal behavior. The IRF7842PBF specifies 5mOhm maximum at 17A and 10V gate-source voltage.

Threshold Voltage: Gate threshold voltage (Vgs(th)) must fall within acceptable operating ranges to ensure compatible gate drive requirements.

Package Compatibility: Surface mount 8-SOIC packaging with 0.154" (3.90mm) width is required for direct board-level substitution.

Compliance Requirements: RoHS3 compliance and REACH unaffected status are mandatory for regulatory alignment.

The DMN3007LSS-13 from Diodes Incorporated is identified as a manufacturer-recommended substitute. While this part operates at a lower Vdss rating (30V versus 40V), it maintains N-Channel MOSFET topology, comparable on-resistance, surface mount 8-SOP packaging, and full RoHS3 compliance.

Parameter Comparison

Engineering Selection Recommendations

Primary Consideration - Product Status: The IRF7842PBF is discontinued at DiGi Electronics, necessitating substitute identification for new designs and ongoing production support. The DMN3007LSS-13 maintains active product status with 17,800 pieces in current inventory, ensuring long-term availability.

Voltage Rating Trade-off: The DMN3007LSS-13 operates at 30V Vdss compared to the IRF7842PBF's 40V rating. This substitute is suitable for applications where the maximum operating voltage does not exceed 30V. For circuits requiring the full 40V capability of the original part, alternative substitutes with higher voltage ratings must be evaluated.

Current and On-Resistance: The DMN3007LSS-13 provides 16A continuous drain current versus 18A for the IRF7842PBF, with slightly higher on-resistance (7mOhm versus 5mOhm at comparable conditions). These differences result in marginally higher power dissipation in high-current applications but remain within the 2.5W thermal budget.

Compliance and Regulatory: Both parts maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment for industrial and commercial applications.

Thermal Performance: Identical operating temperature ranges (-55°C to 150°C junction temperature) and power dissipation ratings (2.5W) support equivalent thermal design considerations.

Frequently Asked Questions (FAQ)

Q: Can the DMN3007LSS-13 directly replace the IRF7842PBF in all applications?

A: Direct substitution is limited by the DMN3007LSS-13's 30V Vdss rating. The substitute is compatible only in circuits where maximum drain-to-source voltage does not exceed 30V. Applications requiring the full 40V capability of the IRF7842PBF require alternative parts with higher voltage ratings.

Q: What is the impact of the on-resistance difference between these parts?

A: The DMN3007LSS-13 specifies 7mOhm maximum on-resistance compared to 5mOhm for the IRF7842PBF. At equivalent current levels, this 2mOhm difference results in proportionally higher power dissipation. For applications operating near the 2.5W thermal limit, this difference may require thermal management review.

Q: Are the package dimensions identical between these parts?

A: Both parts use 8-SOIC surface mount packaging with 0.154" (3.90mm) width. The DMN3007LSS-13 is specified as 8-SOP while the IRF7842PBF is 8-SO, but both conform to the same 8-SOIC (0.154", 3.90mm Width) footprint specification, enabling direct PCB-level substitution without layout modification.

Q: What is the gate charge difference and does it affect circuit design?

A: The DMN3007LSS-13 specifies 64.2nC gate charge at 10V compared to 50nC for the IRF7842PBF at 4.5V. Higher gate charge requires proportionally longer switching times and increased gate drive current. Gate driver circuits must be verified for compatibility with the substitute part's gate charge specification.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the IRF7842PBF and DMN3007LSS-13 are ROHS3 compliant with Moisture Sensitivity Level 1 (unlimited), meeting regulatory requirements for industrial and commercial applications.

Q: What is the inventory status difference?

A: The IRF7842PBF is discontinued with 948 pieces listed as new original stock. The DMN3007LSS-13 is active with 17,800 pieces in current inventory, providing significantly better long-term availability for production and design support.