IRF7834 N-Channel MOSFET 30V 19A Equivalent & Substitute Parts

Part Overview

The IRF7834 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 19A continuous drain current at 25°C. This device is packaged in an 8-SOIC surface mount configuration and is part of the HEXFET® series. The IRF7834 is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production support. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, on-resistance characteristics, and thermal performance while accommodating packaging and compliance requirements.

Key Parameters

Parameter	IRF7834 Value	Unit	Substitution Criticality
Drain-to-Source Voltage (Vdss)	30	V	Critical - Must Match
Continuous Drain Current (Id) @ 25°C	19	A (Ta)	Critical - Minimum Requirement
On-Resistance (Rds On Max) @ 19A, 10V	4.5	mOhm	Critical - Performance Indicator
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.25	V	Important - Drive Compatibility
Gate Charge (Qg) @ 4.5V	44	nC	Important - Switching Performance
Input Capacitance (Ciss) @ 15V	3710	pF	Important - Circuit Behavior
Power Dissipation (Max)	2.5	W (Ta)	Important - Thermal Management
Operating Temperature Range	-55 to 150	°C (TJ)	Important - Environmental Compatibility
Package Type	8-SOIC (0.154", 3.90mm Width)	-	Critical - Physical Compatibility
Mounting Type	Surface Mount	-	Critical - Assembly Compatibility

Substitute Part Grouping Explanation

Substitution of the IRF7834 is determined by strict adherence to the following electrical and mechanical parameters:

Voltage Rating: All substitute parts must maintain a Vdss rating of 30V to ensure safe operation within the original circuit design envelope.

Current Rating: Substitute parts must provide a continuous drain current (Id) rating equal to or greater than 19A at 25°C to support the original load requirements.

On-Resistance (Rds On): The maximum on-resistance at rated current and gate voltage must not exceed the original specification to maintain thermal performance and power efficiency. Lower on-resistance values are acceptable as they improve performance.

Gate Characteristics: Gate threshold voltage (Vgs(th)) and gate charge (Qg) must be compatible with existing drive circuitry. Variations within ±0.5V for threshold voltage and proportional gate charge adjustments are acceptable based on the specific application context.

Package and Mounting: All substitutes must use the 8-SOIC surface mount package with identical pin configuration and footprint dimensions (0.154", 3.90mm Width) to ensure PCB compatibility without layout modifications.

Operating Temperature: All substitutes must support the -55°C to 150°C operating range to maintain environmental compatibility.

Compliance Status: RoHS3 compliance is preferred for new designs; however, RoHS non-compliant parts may be used in legacy applications where compliance is not mandated.

Parameter Comparison

Parameter	IRF7834	IRF8736TRPBF	BSO040N03MSGXUMA1	IRF7862TRPBF	AO4430	FDS8870	SI4842BDY-T1-E3
Vdss (V)	30	30	30	30	30	30	30
Id @ 25°C (A)	19	18	16	21	18	18	28
Rds On Max (mOhm)	4.5 @ 19A, 10V	4.8 @ 18A, 10V	4.0 @ 20A, 10V	3.7 @ 20A, 10V	5.5 @ 18A, 10V	4.2 @ 18A, 10V	4.2 @ 20A, 10V
Vgs(th) Max (V)	2.25 @ 250µA	2.35 @ 50µA	2.0 @ 250µA	2.35 @ 100µA	2.5 @ 250µA	2.5 @ 250µA	3.0 @ 250µA
Qg Max (nC)	44 @ 4.5V	26 @ 4.5V	73 @ 10V	45 @ 4.5V	124 @ 10V	112 @ 10V	100 @ 10V
Ciss Max (pF)	3710 @ 15V	2315 @ 15V	5700 @ 15V	4090 @ 15V	7270 @ 15V	4615 @ 15V	3650 @ 15V
Power Dissipation Max (W)	2.5 (Ta)	2.5 (Ta)	1.56 (Ta)	2.5 (Ta)	3.0 (Ta)	2.5 (Ta)	3.0 (Ta) / 6.25 (Tc)
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Not For New Designs	Active	Not For New Designs	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Manufacturer	Infineon	Infineon	Infineon	Infineon	Alpha & Omega	onsemi	Vishay Siliconix

Engineering Selection Recommendations

Primary Substitute - IRF8736TRPBF (Infineon Technologies):

The IRF8736TRPBF is the recommended direct substitute for the obsolete IRF7834. This part maintains identical voltage and package specifications while providing 18A continuous drain current, which is within acceptable tolerance for most applications requiring 19A capability. The on-resistance of 4.8 mOhm at 18A, 10V is marginally higher than the original 4.5 mOhm specification but remains within acceptable engineering tolerance. The IRF8736TRPBF is in active production status with ROHS3 compliance, ensuring long-term availability and regulatory compliance. Gate charge is reduced to 26 nC, improving switching performance. This part is available in high inventory quantities (503,400 pcs) in Tape & Reel packaging.

Secondary Substitute - IRF7862TRPBF (Infineon Technologies):

The IRF7862TRPBF offers superior electrical performance with 21A continuous drain current and reduced on-resistance of 3.7 mOhm at 20A, 10V. This part is suitable for applications where improved thermal performance and higher current margin are beneficial. The IRF7862TRPBF maintains identical package and voltage specifications and is in active production with ROHS3 compliance. Gate charge remains comparable at 45 nC. This substitute is appropriate for new designs and provides performance enhancement over the original IRF7834.

Alternative Substitute - FDS8870 (onsemi):

The FDS8870 provides cross-manufacturer compatibility with 18A continuous drain current and 4.2 mOhm on-resistance. This part is manufactured by onsemi using PowerTrench® technology and maintains identical package and voltage specifications. The FDS8870 is in active production with ROHS3 compliance. Higher gate charge (112 nC) and input capacitance (4615 pF) may require circuit evaluation for switching performance compatibility. This substitute is suitable for applications where multi-source component strategy is required.

Alternative Substitute - SI4842BDY-T1-E3 (Vishay Siliconix):

The SI4842BDY-T1-E3 offers the highest current rating at 28A continuous drain current with 4.2 mOhm on-resistance at 20A, 10V. This part uses TrenchFET® technology and provides significant performance margin. The SI4842BDY-T1-E3 is in active production with ROHS3 compliance and enhanced thermal performance (6.25W at Tc). Higher gate threshold voltage (3.0V) and gate charge (100 nC) require drive circuit compatibility verification. This substitute is appropriate for applications requiring maximum current headroom and thermal performance.

Not Recommended for New Designs:

BSO040N03MSGXUMA1 and AO4430 are classified as "Not For New Designs" and should be used only for legacy system maintenance or where existing inventory must be consumed. These parts may have limited future availability and should not be selected for new product development.

Frequently Asked Questions (FAQ)

Q1: Can I use IRF8736TRPBF as a direct replacement for IRF7834 without PCB modifications?

A: Yes. The IRF8736TRPBF maintains identical 8-SOIC package dimensions (0.154", 3.90mm Width) and pin configuration. No PCB layout modifications are required. The 18A current rating is acceptable for most applications originally designed for 19A, as the difference represents approximately 5% margin reduction. Verify that your application does not operate continuously at maximum current specification.

Q2: What is the difference between Ta and Tc temperature ratings in power dissipation specifications?

A: Ta refers to ambient temperature, while Tc refers to case temperature. The SI4842BDY-T1-E3 specifies 3W at Ta and 6.25W at Tc, indicating improved thermal performance when case temperature is controlled. For applications with active thermal management, the higher Tc rating provides additional power dissipation capability.

Q3: Why does the IRF7862TRPBF have lower on-resistance than the IRF7834 despite similar specifications?

A: The IRF7862TRPBF represents a newer generation of HEXFET® technology with improved silicon design and manufacturing processes. The 3.7 mOhm on-resistance at 20A, 10V compared to 4.5 mOhm in the IRF7834 reflects technological advancement. This improvement reduces power dissipation and heat generation in the same package.

Q4: Are all substitute parts RoHS3 compliant?

A: All recommended substitute parts (IRF8736TRPBF, IRF7862TRPBF, FDS8870, SI4842BDY-T1-E3) are ROHS3 compliant. The original IRF7834 is RoHS non-compliant. If your application requires RoHS compliance, substitute parts must be selected from the active production, ROHS3-compliant options.

Q5: What does "Not For New Designs" status mean for BSO040N03MSGXUMA1 and AO4430?

A: "Not For New Designs" indicates that these parts are in mature or declining production phases and should not be selected for new product development. These parts may have limited future availability, extended lead times, or planned discontinuation. They are suitable only for maintaining existing products or consuming existing inventory in legacy applications.

Q6: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (IRF8736TRPBF at 26 nC) results in faster switching and lower driver power consumption. Higher gate charge (AO4430 at 124 nC) requires more driver current and may increase switching losses. For high-frequency switching applications, lower gate charge is preferred. Verify that your gate driver can supply the required charge for the selected substitute.

Q7: Can I use SI4842BDY-T1-E3 in a circuit designed for 19A continuous current?

A: Yes. The SI4842BDY-T1-E3 with 28A continuous current rating provides significant margin above the 19A requirement. The lower on-resistance (4.2 mOhm) reduces power dissipation. However, the higher gate threshold voltage (3.0V vs. 2.25V) requires verification that your gate drive voltage is sufficient to fully enhance the device. Confirm that your driver can reliably reach 3.0V gate voltage.

Q8: What is the significance of input capacitance (Ciss) differences between substitutes?

A: Input capacitance affects gate drive circuit behavior and switching speed. Lower Ciss (SI4842BDY-T1-E3 at 3650 pF) results in faster switching transitions and lower driver power requirements. Higher Ciss (AO4430 at 7270 pF) increases switching time and driver power consumption. For applications with fixed gate drive impedance, higher Ciss may reduce switching speed. Evaluate switching frequency requirements when selecting substitutes with significantly different Ciss values.

Q9: Are there any REACH compliance differences between substitute parts?

A: The SI4842BDY-T1-E3 is marked as "REACH Affected," indicating that certain substances in this part are subject to REACH regulations. All other substitutes are "REACH Unaffected." If your application requires REACH compliance documentation, select from the REACH Unaffected options (IRF8736TRPBF, IRF7862TRPBF, FDS8870, BSO040N03MSGXUMA1, AO4430).

Q10: What packaging options are available for substitute parts?

A: IRF8736TRPBF, BSO040N03MSGXUMA1, IRF7862TRPBF, and FDS8870 are available in Tape & Reel (TR) packaging for automated assembly. AO4430 is available in Cut Tape (CT) and Digi-Reel® packaging. SI4842BDY-T1-E3 is available in Tape & Reel packaging. Verify packaging compatibility with your assembly process requirements before final part selection.

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