IRF7832Z N-Channel 30V 21A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7832Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 21A continuous drain current at 25°C. This device operates in the HEXFET® series and is housed in an 8-SO surface mount package. The IRF7832Z is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while meeting modern compliance standards.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	21	A
On-State Resistance (Rds On) @ 20A, 10V	3.8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.35	V
Gate Charge (Qg) @ 4.5V	45	nC
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7832Z is determined by the following electrical and mechanical parameters:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal 30V
Continuous Drain Current (Id): Must be ≥21A at 25°C
On-State Resistance (Rds On): Must be ≤3.8mOhm @ specified test conditions
Gate Threshold Voltage (Vgs(th)): Must fall within ±0.15V of 2.35V
Package: Must be 8-SOIC (0.154", 3.90mm Width) or equivalent surface mount 8-pin configuration
Operating Temperature: Must support -55°C to 150°C minimum range

Secondary Compatibility Criteria:

Gate Charge (Qg): Lower values preferred for faster switching; values up to 51nC acceptable
Power Dissipation: Must support minimum 2.5W at Ta
Mounting Type: Surface mount required

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents (Active Status): Parts meeting all primary criteria with active product status and modern compliance certifications (RoHS3).

Category B - Functional Alternatives (Reduced Current or Obsolete Status): Parts meeting voltage and package requirements with current ratings between 16A–20A, suitable for applications with reduced current demands or as legacy replacements.

Parameter Comparison

Parameter	IRF7832Z (Main)	IRF7832TRPBF	IRF7862TRPBF	RJK0349DSP-01#J0	SI4166DY-T1-GE3	SQ4182EY-T1_GE3	BSO033N03MSGXUMA1	BSO040N03MSGXUMA1	AO4430
Manufacturer	Infineon	Infineon	Infineon	Renesas	Vishay	Vishay	Infineon	Infineon	Alpha & Omega
Vdss (V)	30	30	30	30	30	30	30	30	30
Id @ 25°C (A)	21	20	21	20	30.5	32	17	16	18
Rds On @ 10V (mOhm)	3.8 @ 20A	4.0 @ 20A	3.7 @ 20A	3.8 @ 10A	3.9 @ 15A	3.8 @ 14A	3.3 @ 22A	4.0 @ 20A	5.5 @ 18A
Vgs(th) @ 250µA (V)	2.35	2.32	2.35	—	2.4	2.5	2.0	2.0	2.5
Qg @ 4.5V or 10V (nC)	45 @ 4.5V	51 @ 4.5V	45 @ 4.5V	25 @ 4.5V	65 @ 10V	110 @ 10V	124 @ 10V	73 @ 10V	124 @ 10V
Ciss @ 15V (pF)	3860	4310	4090	3850 @ 10V	2730	5400	9600	5700	7270
Power Dissipation (W)	2.5	2.5	2.5	2.5	3.0 (Ta) / 6.5 (Tc)	7.1 (Tc)	1.56	1.56	3.0
Operating Temp (°C)	-55 to 150	-55 to 155	-55 to 150	to 150	-55 to 150	-55 to 175	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOP	8-SOIC	8-SOIC	PG-DSO-8	PG-DSO-8	8-SOIC
Product Status	Obsolete	Active	Active	Active	Active	Active	Not For New Designs	Not For New Designs	Not For New Designs
RoHS Status	Non-compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant

Engineering Selection Recommendations

Tier 1 - Recommended Direct Replacements (Active Status, Full Compliance):

IRF7832TRPBF (Infineon Technologies)

Identical series (HEXFET®) and electrical specifications to IRF7832Z
20A continuous drain current (1A reduction from original)
Active product status with RoHS3 compliance
Packaging: Cut Tape & Digi-Reel® (8-SO)
Suitable for direct substitution in new designs and production

IRF7862TRPBF (Infineon Technologies)

Exact electrical match: 21A continuous drain current, 3.7mOhm Rds On
Same HEXFET® series and 8-SOIC package
Active product status with RoHS3 compliance
Tape & Reel packaging available
Preferred choice for 1:1 replacement

SI4166DY-T1-GE3 (Vishay Siliconix)

Exceeds current rating: 30.5A (Tc) continuous drain current
Superior Rds On: 3.9mOhm @ 15A, 10V
TrenchFET® technology with lower gate charge (65nC)
Active status, RoHS3 compliant
Higher power dissipation capability (6.5W Tc)
Suitable for applications requiring enhanced thermal performance

SQ4182EY-T1_GE3 (Vishay Siliconix)

Highest current rating: 32A (Tc) continuous drain current
Automotive-grade qualification (AEC-Q101)
Extended operating temperature to 175°C
Active status, RoHS3 compliant
Recommended for automotive and high-reliability applications

RJK0349DSP-01#J0 (Renesas Electronics Corporation)

20A continuous drain current with 3.8mOhm Rds On
Lowest gate charge: 25nC @ 4.5V (fastest switching)
Active status, RoHS3 compliant
8-SOP package (compatible footprint with 8-SOIC)
Suitable for high-frequency switching applications

Tier 2 - Functional Alternatives (Reduced Current, Legacy Support):

BSO033N03MSGXUMA1 (Infineon Technologies)

OptiMOS™ series, 17A continuous drain current
Reduced power dissipation: 1.56W (Ta)
Not For New Designs status
Suitable for legacy system maintenance only

BSO040N03MSGXUMA1 (Infineon Technologies)

OptiMOS™ series, 16A continuous drain current
Reduced power dissipation: 1.56W (Ta)
Not For New Designs status
Suitable for legacy system maintenance only

AO4430 (Alpha & Omega Semiconductor Inc.)

18A continuous drain current
Higher Rds On: 5.5mOhm @ 18A, 10V
Not For New Designs status
Legacy alternative only

Frequently Asked Questions (FAQ)

Q1: Can IRF7832TRPBF directly replace IRF7832Z in existing designs?

A: Yes. IRF7832TRPBF is the active production equivalent of the obsolete IRF7832Z. Both are HEXFET® series devices with identical 30V/21A ratings, 3.8mOhm Rds On, and 8-SOIC packaging. The primary difference is product status (Active vs. Obsolete) and RoHS3 compliance. Electrical performance is equivalent for all standard applications.

Q2: What is the difference between IRF7832TRPBF and IRF7862TRPBF?

A: Both are Infineon HEXFET® devices with 30V/21A ratings and identical Rds On specifications (3.7–3.8mOhm). IRF7862TRPBF has marginally lower Rds On (3.7mOhm vs. 4.0mOhm) and identical gate charge (45nC). Both are active and RoHS3 compliant. IRF7862TRPBF is available in Tape & Reel packaging, while IRF7832TRPBF is available in Cut Tape & Digi-Reel®. Selection depends on packaging requirements.

Q3: When should SI4166DY-T1-GE3 or SQ4182EY-T1_GE3 be selected over IRF7832TRPBF?

A: SI4166DY-T1-GE3 and SQ4182EY-T1_GE3 are recommended when:

Application requires continuous drain current exceeding 21A (30.5A or 32A available)
Thermal management is critical (higher power dissipation ratings: 6.5W or 7.1W)
Lower gate charge is beneficial for high-frequency switching (65nC or 110nC vs. 45nC)
Automotive qualification is required (SQ4182EY-T1_GE3 only, AEC-Q101)
Extended operating temperature range is needed (SQ4182EY-T1_GE3 to 175°C)

Q4: Are BSO033N03MSGXUMA1 and BSO040N03MSGXUMA1 suitable for new designs?

A: No. Both devices carry "Not For New Designs" status. They are OptiMOS™ series alternatives with reduced current ratings (17A and 16A respectively) and lower power dissipation (1.56W). These parts are suitable only for maintaining legacy systems or replacing failed components in existing equipment. For new designs, select active-status alternatives from Tier 1.

Q5: What is the significance of package type differences (8-SOIC vs. 8-SOP vs. PG-DSO-8)?

A: All substitute parts listed use 8-pin surface mount packages with 0.154" (3.90mm) width, ensuring PCB footprint compatibility. Specific package designations (SOIC, SOP, PG-DSO-8) reflect manufacturer conventions but are mechanically and electrically interchangeable for this application. Verify with PCB layout tools before final selection.

Q6: Does RoHS3 compliance affect electrical performance?

A: No. RoHS3 compliance indicates the device meets lead-free and hazardous substance restrictions but does not alter electrical characteristics. The IRF7832Z is RoHS non-compliant (contains lead), while all recommended substitutes are RoHS3 compliant. This is a regulatory requirement for new designs and production, not a performance factor.

Q7: Which substitute offers the lowest on-state resistance?

A: BSO033N03MSGXUMA1 offers the lowest Rds On at 3.3mOhm @ 22A, 10V. However, this device is "Not For New Designs." Among active-status alternatives, IRF7862TRPBF and SI4166DY-T1-GE3 offer the lowest Rds On values (3.7mOhm and 3.9mOhm respectively), with SI4166DY-T1-GE3 providing superior thermal performance.

Q8: Is RJK0349DSP-01#J0 suitable for high-frequency applications?

A: Yes. RJK0349DSP-01#J0 has the lowest gate charge (25nC @ 4.5V) among all listed substitutes, enabling faster switching transitions and reduced switching losses. This device is recommended for applications operating above 100kHz where gate charge minimization is critical.

Q9: What compliance certifications should be verified before final selection?

A: Verify the following for your application:

RoHS3 compliance (all active-status alternatives meet this)
REACH status (all listed parts are REACH Unaffected or Vendor Undefined)
Automotive qualification if required (SQ4182EY-T1_GE3 carries AEC-Q101)
Moisture Sensitivity Level (MSL 1 for most; MSL 3 for BSO series)
ECCN classification (all listed parts are EAR99)

Q10: Can parts with lower current ratings (16A–18A) be used in 21A applications?

A: No. Using parts with lower current ratings in applications requiring 21A continuous drain current will result in thermal stress, reduced device lifetime, and potential failure. Current rating must equal or exceed application requirements. BSO033N03MSGXUMA1 (17A) and BSO040N03MSGXUMA1 (16A) are suitable only for applications with reduced current demands or as temporary legacy replacements pending full redesign.

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