IRF7832TR N-Channel MOSFET 30V 20A Equivalent & Substitute Parts

Part Overview

The IRF7832TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 20A continuous drain current in an 8-SOIC surface mount package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The IRF7832TR operates as a switching element in power management, motor control, and general-purpose switching applications requiring moderate voltage and current ratings.

Substiute Parts

IRF7832TR

Infineon TechnologiesIn Stock: 4304IRF7832TR Datasheet

Current PartRFQ

IRF7832TRPBF

Infineon TechnologiesIn Stock: 37326IRF7832TRPBF Datasheet

DirectRFQ

IRF7862TRPBF

Infineon TechnologiesIn Stock: 22248IRF7862TRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF7832TR are determined by matching the following critical electrical and mechanical parameters:

Electrical Matching Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 30 V
• Continuous Drain Current (Id): Must equal or exceed 20 A at 25°C
• On-State Resistance (Rds On): Must not exceed 4 mOhm @ 20A, 10V to maintain equivalent conduction performance
• Gate Threshold Voltage (Vgs(th)): Must be compatible within ±0.1 V range for gate drive circuit compatibility
• Gate Charge (Qg): Should not significantly exceed 51 nC to maintain switching speed characteristics
• Input Capacitance (Ciss): Should remain within ±10% of 4310 pF for circuit timing stability

Mechanical Matching Criteria:

• Package Type: 8-SOIC form factor required for PCB layout compatibility
• Mounting Type: Surface Mount required for assembly process compatibility
• Moisture Sensitivity Level: MSL 1 or equivalent for storage compatibility

Compliance Matching Criteria:

• RoHS Status: Preference for RoHS3 Compliant parts for regulatory alignment
• REACH Status: REACH Unaffected status maintained across all substitutes

Parameter Comparison

Engineering Selection Recommendations

IRF7832TRPBF (Direct Equivalent):

The IRF7832TRPBF is the direct functional equivalent of the IRF7832TR. It maintains identical electrical specifications across all critical parameters: 30V Vdss, 20A continuous drain current, 4 mOhm Rds On, 2.32V Vgs(th), 51 nC gate charge, and 4310 pF input capacitance. The primary distinction is product status: IRF7832TRPBF is Active and ROHS3 Compliant, whereas the original IRF7832TR is Obsolete and RoHS non-compliant. This part is suitable for direct replacement in existing designs without circuit modification. The 8-SOIC package and surface mount configuration remain unchanged, ensuring PCB layout compatibility.

IRF7862TRPBF (Recommended Manufacturer Substitute):

The IRF7862TRPBF is the manufacturer-recommended substitute offering enhanced electrical performance within the same voltage and package class. It provides 21A continuous drain current (5% higher than the 20A requirement), reduced on-state resistance of 3.7 mOhm (7.5% improvement), and lower gate charge of 45 nC (12% reduction). Input capacitance is reduced to 4090 pF (5% lower). These improvements result in lower conduction losses and faster switching characteristics. The IRF7862TRPBF is Active and ROHS3 Compliant. Operating temperature range is -55°C to 150°C (compared to -55°C to 155°C for IRF7832TRPBF). This part is suitable for new designs and applications where improved efficiency is beneficial. Gate threshold voltage is 2.35V @ 100µA, which remains compatible with standard gate drive circuits.

Compliance Considerations:

Both substitute parts achieve ROHS3 Compliance, addressing regulatory requirements for new procurement. The original IRF7832TR is RoHS non-compliant, making substitution necessary for applications subject to RoHS directives. All three parts maintain REACH Unaffected status and MSL 1 (Unlimited) moisture sensitivity rating.

Frequently Asked Questions (FAQ)

Q: Can IRF7832TRPBF be used as a direct replacement for IRF7832TR?

A: Yes. The IRF7832TRPBF is electrically and mechanically identical to the IRF7832TR across all specified parameters. It operates at the same voltage (30V), current (20A), on-state resistance (4 mOhm), and gate characteristics. The 8-SOIC package and surface mount configuration are unchanged. No circuit modifications are required. The primary advantage is that IRF7832TRPBF is Active and ROHS3 Compliant, whereas IRF7832TR is Obsolete.

Q: What are the advantages of using IRF7862TRPBF instead of IRF7832TRPBF?

A: The IRF7862TRPBF offers improved electrical performance: 21A continuous current (versus 20A), lower on-state resistance of 3.7 mOhm (versus 4 mOhm), and reduced gate charge of 45 nC (versus 51 nC). These characteristics result in lower conduction losses and faster switching response. Both parts are ROHS3 Compliant and Active. The IRF7862TRPBF is suitable for applications where efficiency improvement is desired, provided the circuit design accommodates the slightly different gate threshold voltage (2.35V @ 100µA versus 2.32V @ 250µA).

Q: Are there package compatibility concerns when substituting these parts?

A: No. All three parts use the 8-SOIC (0.154", 3.90mm Width) package in surface mount configuration. PCB footprints, reflow profiles, and assembly processes remain identical. No layout modifications are necessary.

Q: What is the significance of the gate threshold voltage difference between IRF7832TRPBF and IRF7862TRPBF?

A: The gate threshold voltage differs slightly: IRF7832TRPBF is 2.32V @ 250µA, while IRF7862TRPBF is 2.35V @ 100µA. This 0.03V difference is within typical gate drive circuit tolerances and does not require circuit redesign. Both parts operate with standard 5V or 10V gate drive signals. The measurement current difference (250µA versus 100µA) reflects different test conditions but does not affect practical gate drive compatibility.

Q: Why is the operating temperature range different between IRF7832TRPBF and IRF7862TRPBF?

A: IRF7832TRPBF specifies -55°C to 155°C (TJ), while IRF7862TRPBF specifies -55°C to 150°C (TJ). This 5°C difference in maximum junction temperature does not affect most applications. Both parts are suitable for industrial temperature ranges (-40°C to 85°C ambient). Applications requiring operation above 145°C junction temperature should verify compatibility with the specific thermal design.

Q: Are moisture sensitivity levels equivalent across all three parts?

A: Yes. All three parts maintain MSL 1 (Unlimited) moisture sensitivity rating. This indicates no moisture-related storage restrictions. Standard handling procedures for surface mount components apply equally to all three parts.

Q: What compliance certifications apply to these substitute parts?

A: IRF7832TRPBF and IRF7862TRPBF are both ROHS3 Compliant and REACH Unaffected. The original IRF7832TR is RoHS non-compliant. For applications subject to RoHS directives (EU 2011/65/EU and amendments), substitution to either IRF7832TRPBF or IRF7862TRPBF is required. Both parts carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: Can these parts be used interchangeably in existing production?

A: IRF7832TRPBF can be used as a direct interchangeable replacement without design changes. IRF7862TRPBF can be used interchangeably if the circuit design accommodates the improved electrical characteristics (lower Rds On, reduced gate charge, lower input capacitance). No physical or electrical conflicts exist due to identical packaging and compatible gate drive requirements. Verification of thermal performance is recommended when substituting to IRF7862TRPBF due to improved efficiency characteristics.