IRF7832PBF N-Channel 30V 20A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7832PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 20A continuous drain current at 25°C. This device belongs to the HEXFET® series and is housed in an 8-SO surface mount package. The part is currently discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and production requirements. Suitable alternatives must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging specifications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	20	A
On-State Resistance (Rds On) @ 20A, 10V	4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.32	V
Gate Charge (Qg) @ 4.5V	51	nC
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 155	°C
Package Type	8-SOIC	-
Mounting Type	Surface Mount	-

Substitute Part Grouping Explanation

Substitution of the IRF7832PBF is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 30V
Continuous Drain Current (Id): Must be ≥20A at 25°C
On-State Resistance (Rds On): Must be ≤4mOhm @ specified conditions
Gate Threshold Voltage (Vgs(th)): Must be within ±0.5V of 2.32V
Package Type: Must be 8-SOIC or equivalent 8-pin surface mount
Mounting Type: Surface Mount only
RoHS Compliance: ROHS3 Compliant required

Secondary Compatibility Parameters:

Operating Temperature Range: Minimum -55°C to +150°C acceptable
Power Dissipation: ≥2.5W (Ta) acceptable
Gate Charge: Lower values preferred for switching efficiency
Input Capacitance: Similar range acceptable (2700–5700 pF)

Parts are grouped into three categories based on substitution suitability:

Category A – Direct Equivalents: Parts meeting all primary criteria with active product status and identical or superior electrical performance.

Category B – Functional Alternatives: Parts meeting primary electrical criteria but with variations in secondary parameters, lower current ratings, or non-active product status.

Category C – Limited Compatibility: Parts with acceptable electrical parameters but significant deviations in thermal, packaging, or compliance characteristics.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Vgs(th) @ 250µA (V)	Qg @ 4.5V (nC)	Power Diss. (W)	Temp Range (°C)	Package	Status
IRF7832PBF	Infineon	30	20	4	2.32	51	2.5	-55 to 155	8-SOIC	Discontinued
IRF7862TRPBF	Infineon	30	21	3.7	2.35	45	2.5	-55 to 150	8-SOIC	Active
FDS8813NZ	onsemi	30	18.5	4.5	3	76	2.5	-55 to 150	8-SOIC	Active
FDS8870	onsemi	30	18	4.2	2.5	112	2.5	-55 to 150	8-SOIC	Active
SI4166DY-T1-GE3	Vishay Siliconix	30	30.5	3.9	2.4	65	3 (Ta) / 6.5 (Tc)	-55 to 150	8-SOIC	Active
RJK0349DSP-01#J0	Renesas	30	20	3.8	—	25	2.5	—	8-SOIC	Active
AO4430	Alpha & Omega	30	18	5.5	2.5	124	3	-55 to 150	8-SOIC	Not For New Designs
DMN3007LSS-13	Diodes Inc.	30	16	7	2.1	64.2	2.5	-55 to 150	8-SOIC	Active
BSO040N03MSGXUMA1	Infineon	30	16	4	2	73	1.56	-55 to 150	8-SOIC	Not For New Designs
NTMS4802NR2G	onsemi	30	11.1	4	2.5	36	0.91	-55 to 150	8-SOIC	Obsolete

Engineering Selection Recommendations

Category A – Recommended Direct Substitutes (Active Status, Full Compatibility):

IRF7862TRPBF (Infineon Technologies) is the primary recommended substitute. This part exceeds the IRF7832PBF in continuous drain current (21A vs. 20A) and provides superior on-state resistance (3.7mOhm vs. 4mOhm). Gate charge is lower (45nC vs. 51nC), resulting in improved switching efficiency. Both parts are HEXFET® series devices from the same manufacturer, ensuring design continuity. Operating temperature range is -55°C to 150°C. RoHS3 compliant. Active product status with 22,232 units in stock.

SI4166DY-T1-GE3 (Vishay Siliconix TrenchFET®) provides the highest current capability (30.5A continuous) with excellent on-state resistance (3.9mOhm). This part is suitable for applications requiring higher current headroom. Power dissipation is rated at 3W (Ta) and 6.5W (Tc). Gate threshold voltage (2.4V) is within acceptable tolerance. Active product status. Note: REACH Status is listed as REACH Affected; verify compliance requirements for your application.

RJK0349DSP-01#J0 (Renesas Electronics) matches the IRF7832PBF in continuous drain current (20A) with superior on-state resistance (3.8mOhm). Gate charge is significantly lower (25nC), providing switching efficiency advantages. Active product status with 6,025 units in stock. Tape & Reel packaging available.

Category B – Functional Alternatives (Active Status, Minor Parameter Deviations):

FDS8813NZ (onsemi PowerTrench®) provides 18.5A continuous current with 4.5mOhm on-state resistance. Gate threshold voltage is 3V, which is 0.68V higher than the IRF7832PBF. This part is suitable for applications where the higher threshold voltage does not impact gate drive circuitry. Active product status with 15,481 units in stock.

FDS8870 (onsemi PowerTrench®) provides 18A continuous current with 4.2mOhm on-state resistance. Gate threshold voltage is 2.5V, within acceptable tolerance. Gate charge is higher (112nC), which may increase switching losses. Active product status with 4,706 units in stock.

DMN3007LSS-13 (Diodes Incorporated) provides 16A continuous current. On-state resistance is 7mOhm, which is 75% higher than the IRF7832PBF. This part is suitable only for applications where the higher resistance does not exceed thermal or efficiency requirements. Active product status with 17,800 units in stock.

Category C – Limited Compatibility (Non-Active Status or Significant Deviations):

AO4430 (Alpha & Omega Semiconductor) provides 18A continuous current with 5.5mOhm on-state resistance. Product status is "Not For New Designs." Use only for legacy system maintenance or where no other alternatives are available.

BSO040N03MSGXUMA1 (Infineon OptiMOS™) provides 16A continuous current. Product status is "Not For New Designs." Lower power dissipation (1.56W) may indicate reduced thermal capability. Use only for legacy applications.

NTMS4802NR2G (onsemi) provides only 11.1A continuous current, significantly below the IRF7832PBF requirement. Product status is Obsolete. Not recommended for new designs or production applications.

Frequently Asked Questions (FAQ)

Q1: Can I use IRF7862TRPBF as a direct replacement for IRF7832PBF?

A: Yes. IRF7862TRPBF is the recommended direct substitute. Both are Infineon HEXFET® N-Channel MOSFETs rated for 30V with similar on-state resistance and power dissipation. IRF7862TRPBF provides higher continuous current (21A vs. 20A) and lower gate charge (45nC vs. 51nC), making it functionally superior. Both use 8-SOIC packaging. No circuit modifications are required.

Q2: What is the key difference between IRF7862TRPBF and SI4166DY-T1-GE3?

A: Both are 30V N-Channel MOSFETs in 8-SOIC packages. SI4166DY-T1-GE3 provides significantly higher continuous current (30.5A vs. 21A) and higher power dissipation capability (6.5W at Tc vs. 2.5W). SI4166DY-T1-GE3 is suitable for high-current applications. IRF7862TRPBF is the closer electrical match to the original IRF7832PBF. SI4166DY-T1-GE3 has REACH Affected status; verify compliance for your application.

Q3: Why do some substitute parts have lower continuous current ratings than the IRF7832PBF?

A: Lower current ratings (such as DMN3007LSS-13 at 16A or BSO040N03MSGXUMA1 at 16A) indicate these parts are not direct equivalents. They may be suitable only for applications where the actual circuit current is below 16A. If your design requires the full 20A capability, use only parts rated for ≥20A continuous current.

Q4: What does "Not For New Designs" product status mean?

A: Parts marked "Not For New Designs" (such as AO4430 and BSO040N03MSGXUMA1) are in mature or declining production phases. Manufacturers recommend using active alternatives for new product development. These parts may be used only for legacy system support or maintenance. For new designs, select parts with "Active" status.

Q5: How does on-state resistance (Rds On) affect my circuit?

A: On-state resistance directly determines power dissipation and heat generation. Lower Rds On values reduce power loss. The IRF7832PBF has 4mOhm Rds On. Substitutes with lower values (such as IRF7862TRPBF at 3.7mOhm or RJK0349DSP-01#J0 at 3.8mOhm) reduce heat generation. Substitutes with higher values (such as DMN3007LSS-13 at 7mOhm) increase heat generation and may require additional thermal management.

Q6: Can I use parts with different gate threshold voltages?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate-source voltage required to turn the MOSFET on. The IRF7832PBF has Vgs(th) of 2.32V. Substitutes with similar values (2.0V to 2.5V) are compatible with standard gate drive circuits. FDS8813NZ has Vgs(th) of 3V, which is 0.68V higher. Verify that your gate drive circuit can reliably reach this higher threshold voltage before using this part.

Q7: Are all substitute parts available in the same package?

A: All recommended substitutes use 8-SOIC (0.154", 3.90mm Width) packaging, which is mechanically compatible with the IRF7832PBF. However, packaging variants exist (8-SO, 8-SOP, 8-DSO). Verify the exact package designation when ordering. Mechanical compatibility does not guarantee electrical equivalence; always confirm electrical parameters.

Q8: What is the significance of gate charge (Qg)?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching. The IRF7832PBF has 51nC gate charge. IRF7862TRPBF (45nC) and RJK0349DSP-01#J0 (25nC) have lower gate charge, providing switching efficiency advantages. Higher gate charge values (such as AO4430 at 124nC) increase switching losses.

Q9: Which substitute offers the best thermal performance?

A: SI4166DY-T1-GE3 offers the highest power dissipation capability (6.5W at Tc), making it suitable for high-current or high-frequency applications. However, this part also has the highest continuous current rating (30.5A), which may exceed your circuit requirements. For applications requiring only 20A, IRF7862TRPBF or RJK0349DSP-01#J0 provide adequate thermal performance with better size-to-capability matching.

Q10: What compliance certifications should I verify?

A: All recommended substitutes are RoHS3 compliant and have ECCN EAR99 classification. Most are REACH Unaffected. SI4166DY-T1-GE3 is listed as REACH Affected; verify this status against your supply chain requirements. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for most parts, indicating standard handling requirements. Confirm all certifications match your application and regional requirements before final part selection.

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