IRF7828TRPBF N-Channel 30V 13.6A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7828TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 13.6A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The IRF7828TRPBF is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing.

Substitute parts must maintain compatibility across critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, gate charge, and thermal performance. All substitute devices listed are active products with current manufacturing status and full RoHS3 compliance.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	13.6	A
On-Resistance (Rds On Max) @ 10A, 4.5V	12.5	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	1	V
Gate Charge (Qg Max) @ 5V	14	nC
Maximum Gate Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ 15V	1010	pF
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC (0.154", 3.90mm Width)	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7828TRPBF is determined by strict adherence to the following electrical and mechanical criteria:

Mandatory Compatibility Parameters:

Drain-to-Source Voltage (Vdss): Must equal 30V
Package Type: Must be 8-SO or 8-SOIC surface mount configuration with 0.154" (3.90mm) width
Operating Temperature Range: Must support -55°C to 150°C
Moisture Sensitivity Level: Must be MSL 1 or equivalent
Gate Voltage Rating (Vgs Max): Must support ±20V

Electrical Performance Parameters (Allowable Variation):

Continuous Drain Current (Id): Substitute must meet or exceed 13.6A at 25°C
On-Resistance (Rds On): Substitute must not exceed 12.5mOhm at rated conditions
Gate Charge (Qg): Substitute values between 8.7nC and 26nC are acceptable within application tolerance
Input Capacitance (Ciss): Substitute values between 798pF and 1415pF are acceptable
Power Dissipation: Substitute must support minimum 2.5W thermal rating

All substitute parts listed maintain identical voltage ratings, package geometry, and thermal operating range. Variations in drain current, on-resistance, and gate charge reflect manufacturing process differences between suppliers while remaining functionally compatible within standard application requirements.

Parameter Comparison

Parameter	IRF7828TRPBF	IRF8714TRPBF	DMN3016LSS-13	DMN4800LSSL-13	FDS6690A	FDS8878
Manufacturer	Infineon	Infineon	Diodes Inc.	Diodes Inc.	onsemi	Fairchild
Product Status	Obsolete	Active	Active	Active	Active	Active
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	13.6	14	10.3	8	11	10.2
Rds On Max @ 10A, 4.5V (mOhm)	12.5	8.7 @ 14A, 10V	12 @ 12A, 10V	14 @ 8A, 10V	12.5 @ 11A, 10V	14 @ 10.2A, 10V
Vgs(th) Max @ 250µA (V)	1	2.35	2.5	1.6	3	2.5
Qg Max @ 5V (nC)	14	12 @ 4.5V	25.1 @ 10V	8.7 @ 5V	16 @ 5V	26 @ 10V
Vgs Max (V)	±20	±20	±20	±20	±20	±20
Ciss Max @ 15V (pF)	1010	1020	1415	798	1205	897
Power Dissipation Max (W)	2.5	2.5	1.5	1.46	2.5	2.5
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SO	8-SO	8-SO	8-SOIC	8-SOIC
MSL Rating	1	1	1	1	1	1
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified

Engineering Selection Recommendations

Primary Substitute: IRF8714TRPBF

The IRF8714TRPBF is the recommended direct substitute for the IRF7828TRPBF. Both devices are manufactured by Infineon Technologies within the HEXFET® series and share identical voltage ratings, package geometry, and thermal specifications. The IRF8714TRPBF offers superior electrical performance with 14A continuous drain current (versus 13.6A) and lower on-resistance of 8.7mOhm at 14A, 10V. The device is currently in active production status with full RoHS3 compliance and unlimited moisture sensitivity rating. Inventory availability is substantial at 24,299 pieces.

Secondary Substitute: FDS6690A

The FDS6690A manufactured by onsemi is an active alternative rated for 11A continuous drain current with 12.5mOhm on-resistance at 11A, 10V. This device maintains the 30V voltage rating, identical package configuration, and full operating temperature range. The FDS6690A is part of the PowerTrench® series and carries RoHS3 compliance. With 39,900 pieces in inventory, this part offers excellent availability. The slightly lower drain current (11A versus 13.6A) requires application-level verification for current margin adequacy.

Tertiary Substitute: FDS8878

The FDS8878 from Fairchild Semiconductor provides 10.2A continuous drain current with 14mOhm on-resistance at 10.2A, 10V. This device maintains full voltage and package compatibility with 32,800 pieces available. The lower current rating necessitates thermal and current margin analysis in the target application.

Lower-Current Alternatives: DMN3016LSS-13 and DMN4800LSSL-13

The Diodes Incorporated devices DMN3016LSS-13 (10.3A) and DMN4800LSSL-13 (8A) are functionally compatible but feature reduced continuous drain current ratings. These parts are suitable only for applications where the lower current capability meets design requirements. Both devices carry RoHS3 compliance and active product status. The DMN3016LSS-13 offers 6,838 pieces in inventory, while the DMN4800LSSL-13 provides 36,030 pieces.

Compliance and Certification:

All active substitute parts carry REACH Unaffected status and EAR99 export classification. RoHS3 compliance is confirmed for all active devices. Moisture sensitivity level remains MSL 1 (Unlimited) across all substitutes, eliminating moisture-related handling restrictions.

Frequently Asked Questions (FAQ)

Q1: Can the IRF8714TRPBF directly replace the IRF7828TRPBF without circuit modification?

A: Yes. The IRF8714TRPBF maintains identical voltage ratings (30V Vdss), package configuration (8-SO), gate voltage limits (±20V), and operating temperature range (-55°C to 150°C). The higher drain current (14A versus 13.6A) and lower on-resistance (8.7mOhm versus 12.5mOhm) represent performance improvements. No circuit modifications are required for direct substitution.

Q2: What is the significance of the on-resistance (Rds On) difference between the IRF7828TRPBF and substitute parts?

A: On-resistance directly affects power dissipation and thermal performance. Lower Rds On values reduce heat generation at equivalent current levels. The IRF8714TRPBF at 8.7mOhm provides superior thermal characteristics compared to the original 12.5mOhm specification. Higher Rds On values in alternative parts (such as FDS8878 at 14mOhm) increase power dissipation and may require thermal design verification.

Q3: Why do some substitute parts have lower continuous drain current ratings?

A: Drain current rating reflects the maximum continuous current the device can safely conduct at specified temperature conditions. Lower-rated devices (DMN3016LSS-13 at 10.3A, DMN4800LSSL-13 at 8A) are suitable only for applications where the design current requirement does not exceed the substitute part's rating. Application-level current margin analysis is mandatory when selecting lower-rated alternatives.

Q4: Are all substitute parts RoHS3 compliant?

A: All active substitute parts listed carry confirmed RoHS3 compliance. The original IRF7828TRPBF does not specify RoHS status due to its obsolete classification. RoHS3 compliance is a standard requirement for all active Infineon, Diodes Incorporated, and onsemi MOSFET products in this category.

Q5: What is the difference between 8-SO and 8-SOIC packaging?

A: Both designations refer to 8-pin surface mount packages with identical physical dimensions (0.154" or 3.90mm width). The terms are used interchangeably by different manufacturers. All substitute parts maintain mechanical compatibility with the original IRF7828TRPBF footprint.

Q6: How does gate charge (Qg) affect circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Higher gate charge values increase switching losses and may require higher gate drive current. The IRF7828TRPBF specifies 14nC at 5V. Substitute parts range from 8.7nC to 26nC depending on the device. Gate drive circuits must be verified to accommodate the selected substitute's gate charge specification.

Q7: What does MSL 1 (Unlimited) moisture sensitivity rating mean?

A: MSL 1 indicates the device has unlimited shelf life and requires no special moisture control during storage or handling. All listed substitute parts carry MSL 1 rating, eliminating the need for dry-pack storage or baking procedures prior to assembly.

Q8: Which substitute part offers the best overall compatibility?

A: The IRF8714TRPBF provides the highest compatibility level due to identical manufacturer (Infineon), series designation (HEXFET®), and superior electrical performance. This device is the primary recommendation for direct replacement applications.

Q9: Can lower-current substitute parts be used in high-current applications?

A: No. Using a substitute part with lower continuous drain current rating than the application requirement creates thermal stress and potential device failure. Current margin analysis must confirm that the substitute part's rating exceeds the maximum application current by an appropriate safety margin.

Q10: Are there any thermal performance differences between substitute parts?

A: Yes. Power dissipation ratings vary: IRF7828TRPBF, IRF8714TRPBF, and FDS6690A all support 2.5W maximum dissipation, while DMN3016LSS-13 supports 1.5W and DMN4800LSSL-13 supports 1.46W. Lower power dissipation ratings indicate reduced thermal capability and may require enhanced heat sinking or current derating in thermally constrained applications.

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