IRF7828PBF N-Channel 30V 13.6A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7828PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 13.6A continuous drain current at 25°C. This device is part of the HEXFET® series and features a surface mount 8-SO package. The IRF7828PBF is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	13.6	A (Ta)
On-Resistance (Rds On) @ 10A, 4.5V	12.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V
Gate Charge (Qg) @ 5V	14	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 15V	1010	pF
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC (0.154", 3.90mm Width)	Surface Mount
Moisture Sensitivity Level	1 (Unlimited)	MSL

Substitute Part Grouping Explanation

Substitute parts for the IRF7828PBF are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal 30V
Package Type: Must be 8-SOIC (0.154", 3.90mm Width) surface mount
Operating Temperature Range: Must support -55°C to 150°C minimum
Continuous Drain Current (Id): Substitute must meet or exceed 13.6A at 25°C
On-Resistance (Rds On): Substitute must not exceed 12.5mOhm at rated conditions
Gate Voltage Rating (Vgs): Must support ±20V minimum

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values indicate faster switching
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation: Must support thermal requirements of the application
Moisture Sensitivity Level: MSL 1 ensures handling compatibility

All identified substitute parts maintain the 30V Vdss rating and 8-SOIC package format. Substitutes are grouped by their ability to support the 13.6A continuous drain current specification and thermal performance characteristics.

Parameter Comparison

Parameter	IRF7828PBF (Infineon)	DMN3016LSS-13 (Diodes)	DMN4800LSSQ-13 (Diodes)	FDS6690A (onsemi)	FDS8878 (Fairchild)	RS3E135BNGZETB (Rohm)	SQ4410EY-T1_GE3 (Vishay)
Vdss (V)	30	30	30	30	30	30	30
Id @ 25°C (A)	13.6	10.3	8.6	11	10.2	9.5	15
Rds On (mOhm)	12.5 @ 10A, 4.5V	12 @ 12A, 10V	14 @ 9A, 10V	12.5 @ 11A, 10V	14 @ 10.2A, 10V	14.6 @ 9.5A, 10V	12 @ 10A, 10V
Vgs(th) (V)	1 @ 250µA	2.5 @ 250µA	1.6 @ 250µA	3 @ 250µA	2.5 @ 250µA	2.5 @ 1mA	2.5 @ 250µA
Qg (nC)	14 @ 5V	25.1 @ 10V	8.7 @ 5V	16 @ 5V	26 @ 10V	8.3 @ 4.5V	53 @ 10V
Ciss (pF)	1010 @ 15V	1415 @ 15V	798 @ 10V	1205 @ 15V	897 @ 15V	680 @ 15V	2385 @ 25V
Power Dissipation (W)	2.5 (Ta)	1.5 (Ta)	1.46 (Ta)	2.5 (Ta)	2.5 (Ta)	2 (Tc)	5 (Tc)
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 175
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Vgs Max (V)	±20	±20	±25	±20	±20	±20	±20
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Compliance	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: SQ4410EY-T1_GE3 (Vishay Siliconix)

The SQ4410EY-T1_GE3 is the most direct substitute for the IRF7828PBF. This device exceeds the original specification with 15A continuous drain current versus 13.6A, matching the 30V Vdss rating and 8-SOIC package. The on-resistance of 12mOhm at 10A, 10V is equivalent to the original part. The SQ4410EY-T1_GE3 is actively produced, ROHS3 compliant, and rated to 175°C junction temperature, providing enhanced thermal margin. The TrenchFET® technology series ensures compatibility with existing gate drive circuits.

Secondary Substitute: FDS6690A (onsemi)

The FDS6690A provides 11A continuous drain current with matching 30V Vdss and 8-SOIC packaging. On-resistance of 12.5mOhm at 11A, 10V matches the original specification. This device is actively produced with ROHS3 compliance and PowerTrench® technology. Gate charge of 16nC at 5V is slightly higher than the original 14nC, requiring verification of gate drive circuit performance in high-frequency switching applications.

Tertiary Substitute: DMN3016LSS-13 (Diodes Incorporated)

The DMN3016LSS-13 provides 10.3A continuous drain current, which is below the original 13.6A specification. This device is suitable only for applications where the actual circuit current requirement is confirmed to be below 10.3A. On-resistance of 12mOhm at 12A, 10V is acceptable. The part is actively produced and ROHS3 compliant. Gate charge of 25.1nC at 10V is significantly higher than the original, affecting switching speed in gate drive-limited circuits.

Automotive-Grade Option: DMN4800LSSQ-13 (Diodes Incorporated)

The DMN4800LSSQ-13 is qualified to AEC-Q101 automotive standards and provides 8.6A continuous drain current. This device is suitable only for applications where circuit current does not exceed 8.6A. The part is actively produced and ROHS3 compliant. Lower gate charge of 8.7nC at 5V provides faster switching characteristics. Extended Vgs rating of ±25V provides additional gate voltage margin.

Lower-Current Alternatives:

FDS8878 (Fairchild) and RS3E135BNGZETB (Rohm) provide 10.2A and 9.5A continuous drain current respectively. Both are suitable only for applications confirmed to operate below these current levels. These devices are actively produced with ROHS3 compliance and acceptable on-resistance characteristics.

Substitution Constraints:

DMN3016LSS-13, DMN4800LSSQ-13, FDS8878, and RS3E135BNGZETB all provide reduced continuous drain current below the original 13.6A specification and are suitable only for current-limited applications.
All substitute parts maintain the 30V Vdss rating, 8-SOIC package format, and -55°C to 150°C operating temperature range (SQ4410EY-T1_GE3 extends to 175°C).
Gate charge variations require verification of gate drive circuit performance, particularly in applications operating above 100kHz switching frequency.

Frequently Asked Questions (FAQ)

Q: Can the SQ4410EY-T1_GE3 be used as a direct replacement for the IRF7828PBF?

A: Yes. The SQ4410EY-T1_GE3 meets all critical electrical specifications: 30V Vdss, 15A continuous drain current (exceeding the original 13.6A), 12mOhm on-resistance, and 8-SOIC package. The device is actively produced and ROHS3 compliant. Verification of gate drive circuit performance is required only if the original circuit operates above 100kHz switching frequency, as gate charge is 53nC versus the original 14nC.

Q: Why do some substitute parts have lower continuous drain current ratings?

A: Substitute parts are selected based on available active production alternatives that maintain the 30V Vdss rating and 8-SOIC package. Parts with lower current ratings (DMN3016LSS-13 at 10.3A, DMN4800LSSQ-13 at 8.6A) are suitable only for applications where the actual circuit current requirement is confirmed to be below these ratings. Circuit analysis is required to determine if reduced current capability is acceptable.

Q: Are all substitute parts ROHS3 compliant?

A: Five of the seven substitute parts are explicitly ROHS3 compliant: DMN3016LSS-13, DMN4800LSSQ-13, FDS6690A, RS3E135BNGZETB, and SQ4410EY-T1_GE3. FDS8878 compliance status is not specified in the provided data. All parts maintain MSL 1 (Unlimited) moisture sensitivity level.

Q: What is the impact of different gate charge values on circuit performance?

A: Gate charge (Qg) affects switching speed and gate drive circuit requirements. The original IRF7828PBF has 14nC at 5V. Substitute parts range from 8.3nC (RS3E135BNGZETB) to 53nC (SQ4410EY-T1_GE3). Higher gate charge requires longer switching times and may increase switching losses in high-frequency applications. Gate drive circuit verification is required if gate charge differs significantly from the original specification.

Q: Can the DMN4800LSSQ-13 be used in automotive applications?

A: Yes. The DMN4800LSSQ-13 is qualified to AEC-Q101 automotive standards. However, the 8.6A continuous drain current is below the original 13.6A specification. This device is suitable only for automotive applications where the actual circuit current requirement is confirmed to be below 8.6A.

Q: Are all substitute parts available in the same package format?

A: Yes. All substitute parts use the 8-SOIC (0.154", 3.90mm Width) surface mount package, ensuring mechanical compatibility with existing PCB layouts. No package-related modifications are required for substitution.

Q: What is the operating temperature range for substitute parts?

A: All substitute parts support the original -55°C to 150°C operating temperature range. The SQ4410EY-T1_GE3 extends this to -55°C to 175°C, providing additional thermal margin in high-temperature applications.

Q: How do on-resistance values compare across substitute parts?

A: On-resistance values are comparable across all substitute parts, ranging from 12mOhm to 14.6mOhm at their respective rated conditions. The original IRF7828PBF specifies 12.5mOhm at 10A, 4.5V. Substitute parts specify on-resistance at 10V gate voltage, which typically results in lower on-resistance values. Verification of thermal performance is required if on-resistance differences exceed 2mOhm in power-dissipation-critical applications.

Q: What is the inventory status of substitute parts?

A: All substitute parts are actively produced with substantial inventory availability: SQ4410EY-T1_GE3 (10,517 pcs), FDS6690A (39,900 pcs), DMN3016LSS-13 (6,838 pcs), DMN4800LSSQ-13 (7,800 pcs), FDS8878 (32,800 pcs), and RS3E135BNGZETB (3,649 pcs). The original IRF7828PBF is obsolete with 802 pcs remaining in stock.

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