IRF7822PBF N-Channel 30V 18A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7822PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 18A continuous drain current at 25°C. This device is packaged in an 8-SOIC surface mount configuration and features the HEXFET® series technology. The IRF7822PBF is classified as obsolete product status, making identification of functionally equivalent substitute components essential for ongoing design support, production continuity, and component sourcing.

Substitute parts listed below maintain compatibility based on matching electrical specifications including voltage rating, current capacity, package type, and thermal characteristics within acceptable engineering tolerances.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	18	A
On-Resistance (Rds On) @ 15A, 4.5V	6.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V
Gate Charge (Qg) @ 5V	60	nC
Maximum Gate Voltage (Vgs)	±12	V
Input Capacitance (Ciss) @ 16V	5500	pF
Power Dissipation (Max)	3.1	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	Surface Mount
Moisture Sensitivity Level (MSL)	1	Unlimited

Substitute Part Grouping Explanation

Substitute parts are identified based on the following critical parameters that determine functional equivalence for the IRF7822PBF:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 30V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Package: 8-SOIC surface mount (exact match required)
Operating Temperature Range: -55°C to 150°C (exact match required)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): 11A to 20A (acceptable range for 18A rated device)
On-Resistance (Rds On): 4.2 to 8 mOhm (within acceptable switching loss tolerance)
Gate Threshold Voltage (Vgs(th)): 1V to 3V (acceptable gate drive compatibility)
Maximum Gate Voltage (Vgs): ±12V to ±20V (backward compatible)
Power Dissipation: 1.47W to 3.1W (thermal management dependent on application)

All listed substitute parts meet the primary matching criteria. Variations in secondary parameters reflect different manufacturing series and process technologies while maintaining functional compatibility within standard circuit design margins.

Parameter Comparison

Parameter	IRF7822PBF	AO4576	FDS6670A	FDS8870	FDS8896	SI4386DY-T1-E3
Manufacturer	Infineon	Alpha & Omega	Fairchild	onsemi	onsemi	Vishay
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	18	20	13	18	15	11
Rds On (mOhm)	6.5 @ 15A, 4.5V	5.8 @ 20A, 10V	8 @ 13A, 10V	4.2 @ 18A, 10V	6 @ 15A, 10V	7 @ 16A, 10V
Vgs(th) @ 250µA (V)	1	2.2	3	2.5	2.5	2.5
Qg @ Vgs (nC)	60 @ 5V	22.5 @ 10V	30 @ 5V	112 @ 10V	67 @ 10V	18 @ 4.5V
Vgs Max (V)	±12	±20	±20	±20	±20	±20
Ciss @ Vds (pF)	5500 @ 16V	951 @ 15V	2220 @ 15V	4615 @ 15V	2525 @ 15V	Not specified
Power Dissipation Max (W)	3.1	3.1	2.5	2.5	2.5	1.47
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Compliance	Not specified	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: AO4576

The AO4576 from Alpha & Omega Semiconductor is the closest functional equivalent to the IRF7822PBF. It provides 20A continuous drain current (exceeding the 18A requirement), maintains identical 30V voltage rating, and is packaged in 8-SOIC. The AO4576 is active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. On-resistance of 5.8 mOhm at 10V is superior to the IRF7822PBF specification, reducing switching losses. Gate threshold voltage of 2.2V is within acceptable gate drive compatibility margins.

Secondary Recommendation: FDS8870

The FDS8870 from onsemi matches the IRF7822PBF current rating at 18A and maintains 30V voltage specification. This device features the lowest on-resistance at 4.2 mOhm, providing superior efficiency in switching applications. Active product status and ROHS3 compliance support production continuity. Higher gate charge (112 nC) requires consideration in high-frequency switching circuits. Input capacitance of 4615 pF closely approximates the IRF7822PBF specification.

Tertiary Recommendation: FDS8896

The FDS8896 from onsemi provides 15A continuous drain current with 30V rating in 8-SOIC package. On-resistance of 6 mOhm at 10V closely matches IRF7822PBF performance. This device is suitable for applications where the 18A current requirement can be reduced or where thermal management permits lower power dissipation (2.5W). Active product status and ROHS3 compliance ensure availability.

Alternative for Lower Current Applications: SI4386DY-T1-E3

The SI4386DY-T1-E3 from Vishay Siliconix is rated for 11A continuous drain current and is suitable only for applications where current requirements are reduced. This device features the lowest gate charge (18 nC) and lowest power dissipation (1.47W), making it optimal for low-power switching circuits. Active product status and ROHS3 compliance are confirmed.

Not Recommended: FDS6670A

The FDS6670A from Fairchild Semiconductor is rated for only 13A continuous drain current, below the IRF7822PBF specification. While functionally compatible in voltage and package, this device does not meet the current capacity requirement for direct substitution in applications requiring 18A operation.

Frequently Asked Questions (FAQ)

Q: Can the AO4576 directly replace the IRF7822PBF without circuit modifications?

A: Yes. The AO4576 maintains identical voltage rating (30V), package type (8-SOIC), and operating temperature range (-55°C to 150°C). The higher current rating (20A vs. 18A) and superior on-resistance (5.8 mOhm vs. 6.5 mOhm) provide performance improvement. Gate threshold voltage of 2.2V is compatible with standard gate drive circuits designed for the IRF7822PBF.

Q: What is the impact of different gate charge specifications on circuit performance?

A: Gate charge (Qg) affects gate drive current requirements and switching speed. The IRF7822PBF specifies 60 nC at 5V. Substitute parts range from 18 nC (SI4386DY-T1-E3) to 112 nC (FDS8870). Lower gate charge reduces gate drive power consumption and increases switching frequency capability. Higher gate charge requires stronger gate drive circuits. Circuit redesign is not required, but gate drive timing may shift.

Q: Are all substitute parts ROHS3 compliant?

A: Four of five substitute parts (AO4576, FDS8870, FDS8896, SI4386DY-T1-E3) are confirmed ROHS3 compliant. FDS6670A compliance status is not specified in available data. For applications requiring ROHS3 certification, use AO4576, FDS8870, FDS8896, or SI4386DY-T1-E3.

Q: Which substitute part has the lowest on-resistance?

A: The FDS8870 features the lowest on-resistance at 4.2 mOhm (measured at 18A, 10V), compared to the IRF7822PBF at 6.5 mOhm (measured at 15A, 4.5V). Lower on-resistance reduces conduction losses and heat generation in switching applications.

Q: Can I use SI4386DY-T1-E3 in place of IRF7822PBF in all applications?

A: No. The SI4386DY-T1-E3 is rated for 11A continuous drain current, which is 39% below the IRF7822PBF specification of 18A. This device is suitable only for applications where current requirements are reduced or where the circuit can operate at reduced performance levels. Thermal considerations also differ due to lower power dissipation rating (1.47W vs. 3.1W).

Q: What is the difference between the two onsemi options (FDS8870 and FDS8896)?

A: FDS8870 is rated for 18A continuous current with 4.2 mOhm on-resistance, matching the IRF7822PBF current specification. FDS8896 is rated for 15A with 6 mOhm on-resistance. FDS8870 is the preferred onsemi substitute for direct replacement. FDS8896 is suitable for applications where 15A current capacity is sufficient.

Q: Are there any moisture sensitivity concerns with these substitute parts?

A: The IRF7822PBF specifies MSL 1 (Unlimited). AO4576, FDS8870, FDS8896, and SI4386DY-T1-E3 also specify MSL 1 (Unlimited). FDS6670A moisture sensitivity level is not specified. All parts with specified MSL 1 rating have unlimited shelf life without baking requirements.

Q: How do input capacitance differences affect circuit design?

A: Input capacitance (Ciss) affects gate drive circuit impedance and switching transient behavior. The IRF7822PBF specifies 5500 pF at 16V. Substitute parts range from 951 pF (AO4576) to 4615 pF (FDS8870). Lower capacitance reduces gate drive current requirements and enables faster switching. Higher capacitance increases gate drive power consumption. Standard gate drive circuits accommodate this range without modification.

Q: Which substitute part offers the best long-term availability?

A: All five substitute parts are classified as active product status, ensuring ongoing manufacturing and distribution. AO4576, FDS8870, FDS8896, and SI4386DY-T1-E3 are ROHS3 compliant, supporting regulatory requirements for future applications. Current inventory levels (ranging from 4,706 to 45,355 units) indicate strong market availability across all options.

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