IRF7815PBF N-Channel MOSFET 150V 5.1A Equivalent & Substitute Parts

Part Overview

The IRF7815PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 5.1A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The IRF7815PBF has been discontinued at DiGi Electronics, making identification of equivalent substitute components necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	5.1	A
Rds On (Max) @ 10V	43	mOhm
Gate Charge (Qg) @ 10V	38	nC
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	-

Substitute Part Grouping Explanation

Substitution of the IRF7815PBF is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

Drain-to-Source Voltage (Vdss): 150V minimum
Continuous Drain Current (Id): 4.9A or higher at rated temperature
On-State Resistance (Rds On): Within acceptable operating range for the application
Gate Charge (Qg): Consistent switching characteristics
Power Dissipation Rating: 2.5W or higher
Operating Temperature Range: -55°C to 150°C minimum

Mechanical Equivalence Criteria:

Package Type: 8-SOIC surface mount configuration
Pin Pitch and Footprint: 0.154" (3.90mm) width compatibility

Compliance Criteria:

RoHS3 Compliance
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

The FDS2572 from onsemi meets all substitution criteria and is classified as a manufacturer-recommended equivalent.

Parameter Comparison

Parameter	IRF7815PBF (Infineon)	FDS2572 (onsemi)	Unit
FET Type	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	150	150	V
Continuous Drain Current (Id) @ 25°C	5.1	4.9	A
Rds On (Max) @ 10V	43	47	mOhm
Gate Charge (Qg) @ 10V	38	38	nC
Power Dissipation (Max)	2.5	2.5	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	8-SOIC	8-SOIC	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-
MSL Rating	1 (Unlimited)	1 (Unlimited)	-
REACH Status	REACH Unaffected	REACH Unaffected	-

Engineering Selection Recommendations

The FDS2572 from onsemi is a direct substitute for the discontinued IRF7815PBF. Both devices share identical voltage ratings, power dissipation specifications, operating temperature ranges, and package configurations. The FDS2572 maintains ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment with the original component.

The FDS2572 is currently in active production status with 17,200 units available in inventory, providing supply continuity for applications previously using the IRF7815PBF. The electrical parameters remain within acceptable tolerance for equivalent circuit operation, with continuous drain current of 4.9A versus 5.1A and on-state resistance of 47mOhm versus 43mOhm at 10V gate drive.

Frequently Asked Questions (FAQ)

Q: Can the FDS2572 be used as a direct replacement for the IRF7815PBF in existing PCB designs?

A: Yes. Both devices use the 8-SOIC package with identical 0.154" (3.90mm) width and pin pitch. PCB footprints are mechanically and electrically compatible without modification.

Q: What are the key differences between the IRF7815PBF and FDS2572?

A: The primary differences are manufacturer (Infineon versus onsemi) and series designation (HEXFET® versus UltraFET™). Electrical performance is equivalent: both rated 150V, 2.5W, with matching gate charge of 38nC at 10V. The FDS2572 has slightly lower continuous drain current (4.9A versus 5.1A) and marginally higher on-state resistance (47mOhm versus 43mOhm).

Q: Are there any thermal or reliability concerns when substituting the FDS2572 for the IRF7815PBF?

A: Both devices share identical maximum power dissipation (2.5W) and operating temperature range (-55°C to 150°C). Thermal performance is equivalent when mounted on equivalent PCB copper areas and thermal management structures.

Q: Does the FDS2572 require different gate drive voltage than the IRF7815PBF?

A: No. Both devices operate with maximum gate-source voltage of ±20V and are specified for 10V drive voltage. Gate charge characteristics are identical at 38nC at 10V.

Q: What is the availability status of the FDS2572?

A: The FDS2572 is in active production status with 17,200 units currently in stock, providing immediate availability for procurement and design implementation.

Q: Are both devices RoHS3 compliant?

A: Yes. Both the IRF7815PBF and FDS2572 are ROHS3 compliant with MSL rating of 1 (Unlimited) and REACH unaffected status.

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