IRF7811WTR N-Channel MOSFET 30V 14A Equivalent & Substitute Parts

Part Overview

The IRF7811WTR is an N-Channel MOSFET manufactured by Infineon Technologies, part of the HEXFET® series. This device is rated for 30V drain-to-source voltage with 14A continuous drain current at 25°C and features a maximum on-resistance of 12mOhm at 15A and 4.5V gate-source voltage. The IRF7811WTR is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement.

Substiute Parts

IRF7811WTR

Infineon TechnologiesIn Stock: 7465IRF7811WTR Datasheet

Current PartRFQ

DMN3016LSS-13

Diodes IncorporatedIn Stock: 6860DMN3016LSS-13 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7811WTR is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Drain-to-Source Voltage (Vdss): Minimum 30V rating required
• Continuous Drain Current (Id): Minimum 10.3A acceptable for applications designed for 14A operation, provided thermal management and circuit design accommodate reduced current capacity
• On-Resistance (Rds On): Maximum 12mOhm at specified gate-source voltage ensures equivalent switching performance
• Gate-Source Voltage (Vgs Max): Minimum ±12V required for gate drive compatibility
• Operating Temperature Range: -55°C to 150°C (TJ) must be maintained

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package: 8-SOIC (0.154", 3.90mm Width) footprint compatibility mandatory
• Supplier Device Package: 8-SO designation

The DMN3016LSS-13 meets these substitution criteria with equivalent voltage ratings, compatible package geometry, and acceptable on-resistance characteristics within the specified gate-source voltage range.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IRF7811WTR is classified as obsolete, while the DMN3016LSS-13 maintains active product status. This distinction is significant for long-term supply chain planning and design lifecycle management.

Compliance and Certification: The DMN3016LSS-13 is ROHS3 compliant, whereas the IRF7811WTR is RoHS non-compliant. Both devices are REACH Unaffected and carry EAR99 ECCN classification. For applications subject to RoHS regulatory requirements, the DMN3016LSS-13 provides compliance alignment.

Electrical Performance: The DMN3016LSS-13 delivers equivalent on-resistance (12mOhm) at its specified operating point (12A, 10V gate-source voltage). The substitute part exhibits lower gate charge (25.1 nC versus 33 nC) and reduced input capacitance (1415 pF versus 2335 pF), resulting in faster switching characteristics and reduced gate drive power requirements.

Current Rating Differential: The DMN3016LSS-13 is rated for 10.3A continuous drain current compared to the IRF7811WTR's 14A rating. Circuit designs operating at or near the 14A maximum must account for this 26% reduction in current capacity through thermal management analysis and load reassessment.

Packaging and Mechanical Compatibility: Both devices utilize identical 8-SOIC (0.154", 3.90mm Width) surface mount packaging, ensuring direct footprint compatibility on existing printed circuit boards.

Frequently Asked Questions (FAQ)

Q: Can the DMN3016LSS-13 directly replace the IRF7811WTR in all applications?

A: Direct replacement is possible when circuit design accommodates the 10.3A continuous drain current rating of the DMN3016LSS-13. Applications operating below 10.3A at 25°C ambient temperature are fully compatible. Applications requiring the full 14A capacity must undergo thermal and load analysis to confirm acceptable operation at the reduced current rating.

Q: What is the significance of the different on-resistance test conditions?

A: The IRF7811WTR specifies Rds On at 15A and 4.5V gate-source voltage, while the DMN3016LSS-13 specifies Rds On at 12A and 10V gate-source voltage. Both achieve 12mOhm maximum on-resistance. The higher gate-source voltage (10V) in the substitute part ensures lower on-resistance at higher gate drive levels, which is typical for modern gate driver implementations.

Q: Are the packages physically identical?

A: Yes. Both devices are packaged in 8-SOIC (0.154", 3.90mm Width) surface mount configuration. PCB footprints are mechanically compatible without modification.

Q: What are the implications of the lower gate charge in the DMN3016LSS-13?

A: The DMN3016LSS-13 exhibits 25.1 nC gate charge at 10V compared to 33 nC at 5V for the IRF7811WTR. Lower gate charge reduces gate drive power dissipation and enables faster switching transitions, benefiting high-frequency switching applications.

Q: Does the RoHS compliance difference affect substitution decisions?

A: RoHS compliance is a regulatory and procurement consideration rather than a functional performance factor. The DMN3016LSS-13's ROHS3 compliance aligns with current environmental regulations and may be mandatory for certain end-market applications or geographic regions.

Q: How should thermal management differ between these two devices?

A: The DMN3016LSS-13 is rated for 1.5W maximum power dissipation compared to 3.1W for the IRF7811WTR. Thermal design calculations must account for this 52% reduction in allowable power dissipation, potentially requiring enhanced heat sinking or reduced operating current in thermally constrained environments.

Q: Is the ±20V gate-source voltage rating of the DMN3016LSS-13 an advantage?

A: The higher ±20V rating provides additional gate drive margin compared to the IRF7811WTR's ±12V rating. This allows for more robust gate drive implementations and greater tolerance to gate voltage transients, though standard gate driver circuits operating within ±12V remain fully compatible.