IRF7811ATR Equivalent & Substitute Parts

Part Overview

The IRF7811ATR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 28V drain-to-source voltage with 11A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and is part of the HEXFET® series. The IRF7811ATR is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain functional compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance, and thermal characteristics while accommodating the surface mount 8-SOIC package standard.

Key Parameters

Parameter	IRF7811ATR Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	28	V
Current - Continuous Drain (Id) @ 25°C	11	A
Rds On (Max) @ Id, Vgs	10 mOhm @ 11A, 10V	—
Vgs(th) (Max) @ Id	3	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26	nC @ 4.5V
Vgs (Max)	±12	V
Input Capacitance (Ciss) (Max) @ Vds	1760	pF @ 15V
Power Dissipation (Max)	2.5	W
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	RoHS non-compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the IRF7811ATR are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Voltage Rating (Vdss): Substitute parts must equal or exceed the 28V rating of the IRF7811ATR. Parts rated at 30V, 40V, or higher voltage ratings are acceptable as they provide equivalent or superior voltage withstand capability.

Continuous Drain Current (Id): Substitute parts must deliver a minimum of 11A continuous drain current at 25°C to maintain functional equivalence in current-handling capacity.

On-Resistance (Rds On): The IRF7811ATR specifies 10 mOhm maximum at 11A and 10V gate-source voltage. Substitute parts with equal or lower on-resistance values ensure equivalent or improved switching performance and thermal characteristics.

Gate Charge (Qg): Gate charge values determine switching speed and drive circuit requirements. Substitute parts with comparable or lower gate charge facilitate direct circuit integration.

Package Compatibility: All substitute parts must use the 8-SOIC surface mount package with 0.154" (3.90mm) width to ensure mechanical and electrical compatibility with existing PCB layouts.

Operating Temperature Range: Substitute parts must support the -55°C to 150°C operating temperature range of the IRF7811ATR.

Moisture Sensitivity Level (MSL): All substitute parts maintain MSL 1 (Unlimited) classification, ensuring equivalent handling and storage requirements.

Parameter Comparison

Parameter	IRF7811ATR	AO4468	DMN2009LSS-13	FDS4672A	FDS8880	Unit
Manufacturer	Infineon Technologies	Alpha & Omega Semiconductor Inc.	Diodes Incorporated	onsemi	onsemi	—
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	28	30	20	40	30	V
Current - Continuous Drain (Id) @ 25°C	11	10.5	12	11	11.6	A
Rds On (Max) @ Id, Vgs	10 @ 11A, 10V	14 @ 11.6A, 10V	8 @ 12A, 10V	13 @ 11A, 4.5V	10 @ 11.6A, 10V	mOhm
Vgs(th) (Max) @ Id	3 @ 250µA	3 @ 250µA	1.2 @ 250µA	2 @ 250µA	2.5 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	26 @ 4.5V	24 @ 10V	58.3 @ 10V	49 @ 4.5V	30 @ 10V	nC
Vgs (Max)	±12	±20	±12	±12	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1760 @ 15V	1200 @ 15V	2555 @ 10V	4766 @ 20V	1235 @ 15V	pF
Power Dissipation (Max)	2.5	3.1	2	2.5	2.5	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 175	-55 to 150	°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	—
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Product Status	Obsolete	Not For New Designs	Active	Active	Active	—

Engineering Selection Recommendations

AO4468 (Alpha & Omega Semiconductor Inc.): This part provides a 30V voltage rating with 10.5A continuous drain current, meeting the minimum current requirement with a slight margin. The 14 mOhm on-resistance is higher than the IRF7811ATR, resulting in increased power dissipation. The AO4468 is classified as "Not For New Designs," indicating limited long-term availability. RoHS3 compliance is achieved. This substitute is suitable for applications where voltage headroom and thermal management accommodate the higher on-resistance.

DMN2009LSS-13 (Diodes Incorporated): This part operates at a lower 20V voltage rating, which is below the 28V specification of the IRF7811ATR. The DMN2009LSS-13 delivers 12A continuous drain current and features an 8 mOhm on-resistance, providing superior switching performance. However, the 20V rating limits its use to applications where the maximum operating voltage does not exceed 20V. The product status is Active, ensuring long-term availability. RoHS3 compliance is achieved. This substitute is applicable only when circuit voltage requirements are confirmed below 20V.

FDS4672A (onsemi): This part provides a 40V voltage rating with 11A continuous drain current, matching the current specification of the IRF7811ATR. The 13 mOhm on-resistance at 4.5V gate-source voltage is higher than the IRF7811ATR specification. The extended operating temperature range of -55°C to 175°C exceeds the IRF7811ATR range. The product status is Active, ensuring availability. RoHS3 compliance is achieved. This substitute is suitable for applications requiring higher voltage margins and extended temperature operation.

FDS8880 (onsemi): This part provides a 30V voltage rating with 11.6A continuous drain current, exceeding the IRF7811ATR current specification. The 10 mOhm on-resistance at 10V gate-source voltage matches the IRF7811ATR specification exactly. The gate charge of 30 nC is slightly higher than the IRF7811ATR at 26 nC. The product status is Active, ensuring long-term availability. RoHS3 compliance is achieved. This substitute provides the closest electrical equivalence to the IRF7811ATR with superior current capacity and confirmed availability.

Frequently Asked Questions (FAQ)

Q: Can the DMN2009LSS-13 be used as a direct replacement for the IRF7811ATR?

A: The DMN2009LSS-13 has a 20V voltage rating, which is below the 28V specification of the IRF7811ATR. Direct substitution is not recommended unless the circuit design operates exclusively below 20V maximum drain-source voltage. Verification of actual circuit voltage conditions is required before selection.

Q: Which substitute part provides the best electrical match to the IRF7811ATR?

A: The FDS8880 provides the closest electrical equivalence, with matching 10 mOhm on-resistance at 10V gate-source voltage, 11.6A continuous drain current (exceeding the 11A requirement), and a 30V voltage rating that exceeds the 28V specification. The FDS8880 is also classified as Active, ensuring long-term availability.

Q: Are all substitute parts RoHS compliant?

A: The IRF7811ATR is RoHS non-compliant. All four substitute parts (AO4468, DMN2009LSS-13, FDS4672A, and FDS8880) are ROHS3 compliant. If RoHS compliance is required for new designs, any of these substitutes can be selected based on electrical requirements. If RoHS non-compliance must be maintained for legacy system compatibility, the IRF7811ATR should be sourced directly.

Q: Do all substitute parts use the same package as the IRF7811ATR?

A: Yes. All substitute parts use the 8-SOIC surface mount package with 0.154" (3.90mm) width, ensuring mechanical and electrical compatibility with existing PCB layouts designed for the IRF7811ATR.

Q: What is the significance of the "Not For New Designs" status of the AO4468?

A: The "Not For New Designs" classification indicates that the manufacturer is not recommending this part for new circuit designs and may have limited long-term availability. While the AO4468 is currently in stock, designs using this part may face supply constraints in the future. The FDS8880 or FDS4672A are preferred for new designs due to their Active product status.

Q: How does gate charge affect circuit performance in a substitution?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on and off. The IRF7811ATR specifies 26 nC at 4.5V. The FDS8880 specifies 30 nC at 10V, which is slightly higher. Higher gate charge requires more drive current from the gate driver circuit. If the existing gate driver has limited current capacity, the switching speed may be affected. The DMN2009LSS-13 specifies 58.3 nC, which is significantly higher and may require gate driver circuit modifications.

Q: Can the FDS4672A be used in applications requiring operation above 150°C?

A: The FDS4672A has an operating temperature range of -55°C to 175°C, which exceeds the IRF7811ATR range of -55°C to 150°C. The FDS4672A can be used in applications requiring operation up to 175°C. However, the higher 13 mOhm on-resistance at 4.5V gate-source voltage must be considered for thermal management at elevated temperatures.

Q: What is the impact of on-resistance differences between the IRF7811ATR and substitute parts?

A: On-resistance (Rds On) directly affects power dissipation and heat generation. The IRF7811ATR specifies 10 mOhm at 11A and 10V. The FDS8880 matches this specification. The AO4468 specifies 14 mOhm, resulting in 40% higher power dissipation at the same current. The DMN2009LSS-13 specifies 8 mOhm, resulting in 20% lower power dissipation. The FDS4672A specifies 13 mOhm at 4.5V gate-source voltage. Thermal design and heat dissipation capacity must be verified when selecting parts with different on-resistance values.

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