IRF7811APBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7811APBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 28V drain-to-source voltage with 11A continuous drain current at 25°C. This device is part of the HEXFET® series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and redesign applications. The IRF7811APBF is packaged in 8-SOIC surface mount configuration with a maximum power dissipation of 2.5W.

Substiute Parts

IRF7811APBF

Infineon TechnologiesIn Stock: 786IRF7811APBF Datasheet

Current PartRFQ

DMN2009LSS-13

Diodes IncorporatedIn Stock: 15325DMN2009LSS-13 Datasheet

MFR RecommendedRFQ

FDS4672A

onsemiIn Stock: 8002FDS4672A Datasheet

MFR RecommendedRFQ

FDS8880

onsemiIn Stock: 38174FDS8880 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7811APBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• FET Type: N-Channel MOSFET (Metal Oxide Semiconductor)
• Package: 8-SOIC surface mount configuration
• Drain-to-Source Voltage (Vdss): Minimum 28V required
• Continuous Drain Current (Id): Minimum 11A at 25°C
• On-Resistance (Rds On): Comparable performance at rated current
• Operating Temperature Range: Minimum -55°C to 150°C
• Gate Voltage Compatibility: ±12V or greater

Substitute Parts Identified:

1. DMN2009LSS-13 (Diodes Incorporated) – Lower voltage rating (20V) with higher current capability (12A) and improved on-resistance (8mOhm). Active product status. Suitable for applications where 20V Vdss is sufficient.

2. FDS8880 (onsemi) – Closest electrical match with 30V Vdss, 11.6A current, and 10mOhm on-resistance. Active product status. Extended gate voltage rating (±20V). Lowest input capacitance (1235 pF).

3. FDS4672A (onsemi) – Higher voltage rating (40V) with matching 11A current and 2.5W power dissipation. Active product status. Extended operating temperature to 175°C. Higher on-resistance (13mOhm) and input capacitance (4766 pF).

All substitute parts maintain 8-SOIC packaging, surface mount mounting type, and ROHS3 compliance where applicable.

Parameter Comparison

Engineering Selection Recommendations

FDS8880 (Primary Recommendation)

The FDS8880 from onsemi is the optimal substitute for the IRF7811APBF. This device provides the closest electrical performance match with 30V Vdss (exceeding the 28V requirement), 11.6A continuous drain current, and identical 10mOhm on-resistance at rated current. The FDS8880 maintains the same 8-SOIC package footprint and power dissipation rating (2.5W). As an active product with ROHS3 compliance, it ensures long-term availability and regulatory compliance. The extended gate voltage rating (±20V) provides additional design margin. Input capacitance (1235 pF) is lower than the main part, resulting in faster switching characteristics.

FDS4672A (Secondary Recommendation for Higher Voltage Applications)

The FDS4672A is suitable for applications requiring higher voltage headroom. With 40V Vdss rating, this device accommodates transient overvoltage conditions while maintaining 11A continuous current and 2.5W power dissipation. The extended operating temperature range (-55°C to 175°C) supports high-temperature environments. Higher on-resistance (13mOhm) and input capacitance (4766 pF) must be evaluated against circuit performance requirements. Active product status and ROHS3 compliance ensure supply chain continuity.

DMN2009LSS-13 (Alternative for Lower Voltage Applications)

The DMN2009LSS-13 is applicable only when circuit design permits operation at 20V Vdss or lower. This device offers superior on-resistance (8mOhm) and higher current capability (12A). However, the significantly higher gate charge (58.3 nC) and input capacitance (2555 pF) result in slower switching performance compared to the main part. Use is restricted to applications where the 20V voltage rating is adequate and switching speed is not critical.

Selection Criteria Summary:

• Voltage Margin Required: FDS4672A (40V)
• Closest Performance Match: FDS8880 (30V)
• Cost-Optimized, Lower Voltage: DMN2009LSS-13 (20V)

All three substitutes are active products with current manufacturing status, ensuring availability for production quantities and long-term support.

Frequently Asked Questions (FAQ)

Q1: Can the DMN2009LSS-13 be used as a direct replacement for the IRF7811APBF?

The DMN2009LSS-13 is not a direct replacement due to its 20V Vdss rating, which is 8V lower than the IRF7811APBF. Use this substitute only if circuit design analysis confirms that the maximum operating voltage does not exceed 20V. The lower voltage rating reduces safety margin for transient overvoltage events.

Q2: What is the primary advantage of the FDS8880 over other substitutes?

The FDS8880 provides the closest electrical performance match to the IRF7811APBF. It maintains 30V Vdss (exceeding the 28V requirement), identical 10mOhm on-resistance, and matching 2.5W power dissipation. The lower input capacitance (1235 pF) enables faster switching compared to the main part and other substitutes.

Q3: Are all substitute parts compatible with the same PCB footprint?

Yes. All substitute parts use the 8-SOIC (0.154", 3.90mm width) package, which is mechanically and electrically compatible with the IRF7811APBF PCB footprint. No PCB redesign is required for package accommodation.

Q4: What is the impact of higher gate charge in the DMN2009LSS-13?

The DMN2009LSS-13 has gate charge of 58.3 nC at 10V, compared to 26 nC for the IRF7811APBF. Higher gate charge increases switching time and driver power dissipation. This affects circuit performance in high-frequency switching applications. Verify driver capability before selection.

Q5: Can the FDS4672A be used in all applications designed for the IRF7811APBF?

The FDS4672A is electrically compatible with the IRF7811APBF in most applications. The 40V Vdss rating provides additional voltage margin. However, higher on-resistance (13mOhm) and input capacitance (4766 pF) may impact efficiency and switching speed. Thermal and switching performance analysis is required for high-frequency or high-current applications.

Q6: What is the significance of the "Active" product status for substitute parts?

Active product status indicates current manufacturing and long-term availability commitment from the manufacturer. This ensures component supply for production quantities, design revisions, and field replacements. The IRF7811APBF's obsolete status makes active substitutes essential for new designs and production continuity.

Q7: Are all substitute parts ROHS3 compliant?

Yes. The FDS8880, FDS4672A, and DMN2009LSS-13 are all ROHS3 compliant. The IRF7811APBF is listed as REACH Unaffected. All parts meet current environmental and regulatory requirements for commercial and industrial applications.

Q8: How do I determine which substitute is best for my application?

Evaluate based on: (1) Required voltage rating (20V, 28V, 30V, or 40V), (2) Switching frequency and driver capability (gate charge and input capacitance), (3) Thermal requirements (power dissipation and operating temperature), (4) Cost and availability constraints. The FDS8880 is recommended as the default choice for most applications requiring direct performance equivalence.