IRF7809AV N-Channel 30V 13.3A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7809AV is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 13.3A continuous drain current at 25°C. This device features the HEXFET® series technology in an 8-SOIC surface mount package. The IRF7809AV is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and mechanical packaging to ensure direct replacement capability in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	13.3	A (Ta)
On-Resistance (Rds On Max) @ 15A, 4.5V	9	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V
Gate Charge (Qg) @ 5V	62	nC
Power Dissipation (Max)	2.5	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC	Surface Mount

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7809AV is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Package Type: Must be 8-SOIC surface mount with identical pinout
Operating Temperature Range: Must support -55°C to 150°C (TJ)
Mounting Type: Surface mount only

Performance Matching Criteria:

Continuous Drain Current (Id): Rated current must support 13.3A minimum at 25°C
On-Resistance (Rds On): Lower or equal values ensure thermal performance compatibility
Gate Charge (Qg): Lower values indicate improved switching characteristics
Power Dissipation: Must handle thermal load requirements

The substitute parts listed below meet these mandatory criteria and are electrically compatible with the IRF7809AV in circuit applications requiring N-Channel 30V MOSFET functionality.

Parameter Comparison

Parameter	IRF7809AV	IRF7809AVTRPBF	SI4420BDY-T1-E3	SI4686DY-T1-E3
Manufacturer	Infineon	Infineon	Vishay Siliconix	Vishay Siliconix
Vdss (V)	30	30	30	30
Id @ 25°C (A)	13.3 (Ta)	13.3 (Ta)	9.5 (Ta)	18.2 (Tc)
Rds On Max @ 4.5V/10V (mOhm)	9 @ 15A, 4.5V	9 @ 15A, 4.5V	8.5 @ 13.5A, 10V	9.5 @ 13.8A, 10V
Vgs(th) Max @ 250µA (V)	1	1	3	3
Qg Max @ 5V/10V (nC)	62 @ 5V	62 @ 5V	50 @ 10V	26 @ 10V
Power Dissipation Max (W)	2.5 (Ta)	2.5 (Ta)	1.4 (Ta)	3 (Ta), 5.2 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Obsolete	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF7809AVTRPBF (Infineon Technologies)

This part is a direct equivalent to the IRF7809AV with identical electrical specifications. It maintains the same 30V/13.3A rating, 9mOhm on-resistance, and 2.5W power dissipation. The primary distinction is packaging format (Cut Tape & Digi-Reel) and RoHS3 compliance status. As an obsolete product from the same manufacturer, this substitute provides continuity for legacy designs. Inventory availability is significantly higher (5,000,400 pcs), supporting volume production requirements.

SI4686DY-T1-E3 (Vishay Siliconix)

This TrenchFET® series device offers superior current handling at 18.2A (Tc) and enhanced power dissipation capability (5.2W at Tc), exceeding the IRF7809AV specifications. The 30V voltage rating matches exactly. Gate charge is substantially lower (26 nC @ 10V versus 62 nC @ 5V), indicating improved switching performance. Product status is active with ROHS3 compliance. This substitute is suitable for applications requiring higher current margins or improved thermal performance within the same voltage class.

SI4420BDY-T1-E3 (Vishay Siliconix)

This TrenchFET® device is rated for 9.5A continuous drain current, below the IRF7809AV specification of 13.3A. The 30V voltage rating is compatible. On-resistance is slightly lower (8.5 mOhm @ 13.5A, 10V). Power dissipation is reduced to 1.4W (Ta). This substitute is applicable only in applications where the 9.5A current rating is sufficient and thermal constraints are less demanding. Product status is active with ROHS3 compliance.

Selection Basis:

Direct Replacement: IRF7809AVTRPBF maintains 100% electrical equivalence
Enhanced Performance: SI4686DY-T1-E3 for higher current or thermal margin requirements
Reduced Current Applications: SI4420BDY-T1-E3 for designs operating below 9.5A continuous drain current
Regulatory Compliance: All active substitutes (SI4686DY-T1-E3, SI4420BDY-T1-E3) meet ROHS3 requirements

Frequently Asked Questions (FAQ)

Q: Can SI4420BDY-T1-E3 replace IRF7809AV in all applications?

A: No. The SI4420BDY-T1-E3 is rated for 9.5A continuous drain current, which is below the IRF7809AV specification of 13.3A. This substitute is compatible only in circuits where the actual drain current does not exceed 9.5A at 25°C. Circuit analysis is required to confirm current requirements before substitution.

Q: What is the difference between IRF7809AV and IRF7809AVTRPBF?

A: Both parts are electrically identical with 30V/13.3A ratings and 9mOhm on-resistance. The primary differences are packaging format (IRF7809AVTRPBF is supplied in Cut Tape & Digi-Reel format) and RoHS compliance status (IRF7809AVTRPBF is ROHS3 compliant). Both are classified as obsolete products.

Q: Is SI4686DY-T1-E3 a direct drop-in replacement?

A: Yes, from a mechanical and electrical standpoint. The SI4686DY-T1-E3 uses the same 8-SOIC package and 30V voltage rating. However, it offers higher current capability (18.2A vs 13.3A) and lower gate charge (26 nC vs 62 nC). These differences represent performance improvements rather than incompatibilities. Pinout compatibility must be verified against the specific circuit design.

Q: Why is gate charge (Qg) important for substitution?

A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (SI4686DY-T1-E3 at 26 nC) enables faster switching transitions compared to higher values (IRF7809AV at 62 nC). If the gate driver circuit is optimized for the original part's gate charge, substitution with significantly different values may affect switching performance or require driver circuit adjustment.

Q: Are all substitute parts RoHS compliant?

A: No. The IRF7809AV and IRF7809AVTRPBF are RoHS non-compliant and ROHS3 compliant respectively. The Vishay Siliconix substitutes (SI4686DY-T1-E3 and SI4420BDY-T1-E3) are both ROHS3 compliant. For applications requiring RoHS compliance, only the active Vishay parts or the IRF7809AVTRPBF are suitable.

Q: What is the significance of product status (Active vs. Obsolete)?

A: Active products have ongoing manufacturer support, continued production, and long-term availability. Obsolete products have limited or no production and may face supply constraints. For new designs, active substitutes (SI4686DY-T1-E3, SI4420BDY-T1-E3) are preferred. For legacy design support, obsolete equivalents (IRF7809AVTRPBF) may be necessary.

Q: Can I use SI4686DY-T1-E3 in place of IRF7809AV if my circuit only draws 10A?

A: Yes. The SI4686DY-T1-E3 is rated for 18.2A continuous drain current, which exceeds the 10A requirement. The 30V voltage rating matches. The lower gate charge and improved thermal characteristics provide additional design margin. Pinout compatibility with the 8-SOIC package must be confirmed.

Q: What does "Ta" and "Tc" mean in current ratings?

A: Ta refers to ambient temperature measurement, while Tc refers to case temperature measurement. SI4686DY-T1-E3 specifies 18.2A at Tc (case temperature), which typically allows higher current ratings than Ta measurements. When comparing current ratings between parts, measurement conditions must be considered for accurate thermal analysis.

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