IRF7809ATR N-Channel 30V 14.5A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7809ATR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 14.5A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and belongs to the HEXFET® series. The IRF7809ATR is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support, production continuity, and component sourcing.

Substitute parts must maintain compatibility across critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and thermal performance, while accommodating variations in gate charge, input capacitance, and threshold voltage within acceptable design margins.

Key Parameters

Parameter	Value	Specification Basis
Drain-to-Source Voltage (Vdss)	30 V	Maximum voltage rating between drain and source terminals
Continuous Drain Current (Id) @ 25°C	14.5 A (Ta)	Maximum sustained current at ambient temperature
On-Resistance (Rds On) @ Id, Vgs	8.5 mOhm @ 15A, 4.5V	Drain-source resistance in saturation region
Gate-Source Voltage (Vgs) Max	±12 V	Maximum gate-source voltage rating
Power Dissipation (Max)	2.5 W (Ta)	Maximum power dissipation at ambient temperature
Operating Temperature Range	-55°C to 150°C (TJ)	Junction temperature operating limits
Package Type	8-SOIC (0.154", 3.90mm Width)	Surface mount package configuration
Mounting Type	Surface Mount	PCB assembly method

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7809ATR is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria (Non-Negotiable):

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id) @ 25°C: Must equal or exceed 14.5A
Package Type: Must be 8-SOIC or equivalent 8-pin surface mount configuration
Mounting Type: Surface mount only
Operating Temperature Range: Must encompass -55°C to 150°C (TJ)

Secondary Compatibility Parameters (Allowable Variation):

On-Resistance (Rds On): Variation acceptable within design thermal budget
Gate Charge (Qg): Lower values acceptable; higher values require gate drive circuit verification
Input Capacitance (Ciss): Variation acceptable with appropriate gate drive design
Gate-Source Voltage (Vgs) Max: Equal or greater than ±12V acceptable
Power Dissipation: Equal or greater than 2.5W acceptable

Compliance Considerations:

RoHS Status: ROHS3 Compliant substitutes preferred for new designs
Moisture Sensitivity Level (MSL): MSL 1 (Unlimited) required
Product Status: Active status preferred; obsolete status acceptable for legacy support

The four substitute parts listed below meet all primary criteria and are grouped by manufacturer and product status.

Parameter Comparison

Parameter	IRF7809ATR (Main)	IRF7809AVTRPBF	FDS6670A	FDS8880	RJK0355DSP-01#J0
Manufacturer	Infineon Technologies	Infineon Technologies	Fairchild Semiconductor	onsemi	Renesas Electronics
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	14.5	13.3	13	11.6	12
Rds On (mOhm)	8.5 @ 15A, 4.5V	9 @ 15A, 4.5V	8 @ 13A, 10V	10 @ 11.6A, 10V	11.1 @ 6A, 10V
Vgs(th) @ Id (V)	1 @ 250µA	1 @ 250µA	3 @ 250µA	2.5 @ 250µA	Not specified
Qg @ Vgs (nC)	75 @ 5V	62 @ 5V	30 @ 5V	30 @ 10V	6 @ 4.5V
Ciss @ Vds (pF)	7300 @ 16V	3780 @ 16V	2220 @ 15V	1235 @ 15V	860 @ 10V
Vgs Max (V)	±12	±12	±20	±20	±20
Power Dissipation (W)	2.5	2.5	2.5	2.5	1.8
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Obsolete	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF7809AVTRPBF (Infineon Technologies)

This part is the manufacturer-recommended substitute from Infineon Technologies. It maintains the same 30V/13.3A electrical rating and 8-SOIC package as the IRF7809ATR. The IRF7809AVTRPBF exhibits slightly higher on-resistance (9 mOhm vs. 8.5 mOhm) and lower gate charge (62 nC vs. 75 nC), resulting in reduced gate drive power requirements. ROHS3 compliance and unlimited moisture sensitivity rating support modern manufacturing processes. This substitute is optimal for designs requiring manufacturer continuity and regulatory compliance.

FDS6670A (Fairchild Semiconductor)

The FDS6670A is an active-status PowerTrench® device rated for 30V/13A continuous drain current. It provides the lowest on-resistance among substitutes at 8 mOhm (measured at 13A, 10V gate voltage) and significantly reduced gate charge (30 nC). The higher gate-source voltage rating (±20V) and lower input capacitance (2220 pF) provide design flexibility for gate drive circuits. This part is suitable for applications prioritizing efficiency and gate drive simplification.

FDS8880 (onsemi)

The FDS8880 is an active-status PowerTrench® device rated for 30V/11.6A continuous drain current. It features the lowest input capacitance (1235 pF) and minimal gate charge (30 nC), making it advantageous for high-frequency switching applications. The ±20V gate-source voltage rating and ROHS3 compliance support modern design requirements. This substitute is appropriate for applications where switching speed and gate drive efficiency are critical.

RJK0355DSP-01#J0 (Renesas Electronics Corporation)

The RJK0355DSP-01#J0 is an active-status device rated for 30V/12A continuous drain current with the lowest gate charge (6 nC) and input capacitance (860 pF) among all substitutes. However, this part exhibits higher on-resistance (11.1 mOhm) and reduced power dissipation rating (1.8W vs. 2.5W). The 8-SOP package is mechanically compatible with 8-SOIC footprints. This substitute is suitable for low-power applications where gate drive simplification and switching speed are prioritized over current-carrying capacity.

Selection Guidance:

For legacy system support requiring minimal design changes, select IRF7809AVTRPBF. For new designs emphasizing efficiency and regulatory compliance, select FDS6670A or FDS8880. For applications requiring minimal gate drive power, select RJK0355DSP-01#J0 with thermal verification due to reduced power dissipation rating.

Frequently Asked Questions (FAQ)

Q: Can the IRF7809AVTRPBF directly replace the IRF7809ATR without PCB modifications?

A: Yes. Both devices use identical 8-SOIC packaging with matching pin configurations and footprints. No PCB layout changes are required. The IRF7809AVTRPBF is the manufacturer-recommended substitute and maintains electrical compatibility within design thermal margins.

Q: What is the primary difference between Infineon and Fairchild/onsemi substitutes?

A: Infineon substitutes (IRF7809AVTRPBF) maintain the same HEXFET® series characteristics and gate drive requirements as the original IRF7809ATR. Fairchild (FDS6670A) and onsemi (FDS8880) PowerTrench® devices feature significantly lower gate charge and input capacitance, requiring gate drive circuit re-evaluation but offering improved efficiency and switching performance.

Q: Is the RJK0355DSP-01#J0 suitable for high-current applications?

A: No. The RJK0355DSP-01#J0 is rated for 12A continuous drain current, below the IRF7809ATR specification of 14.5A. Additionally, its power dissipation rating is reduced to 1.8W. This substitute is appropriate only for applications operating below 12A with thermal analysis confirming acceptable junction temperatures.

Q: Do all substitute parts meet RoHS compliance requirements?

A: IRF7809AVTRPBF, FDS8880, and RJK0355DSP-01#J0 are ROHS3 compliant. FDS6670A RoHS status is not specified in available documentation. For applications requiring verified RoHS compliance, confirm with the component supplier.

Q: Can gate drive circuits designed for IRF7809ATR be used with FDS6670A or FDS8880 without modification?

A: Gate drive circuits may require evaluation. FDS6670A and FDS8880 feature significantly lower gate charge (30 nC vs. 75 nC) and input capacitance, potentially reducing gate drive power dissipation. However, gate drive voltage levels (±12V vs. ±20V maximum) and switching speed characteristics differ. Verify gate drive circuit performance through simulation or bench testing before production implementation.

Q: What is the moisture sensitivity level (MSL) for all substitute parts?

A: All substitute parts are rated MSL 1 (Unlimited), matching the IRF7809ATR specification. This rating permits unlimited shelf life without moisture baking requirements.

Q: Are there package compatibility concerns between 8-SOIC and 8-SOP variants?

A: The RJK0355DSP-01#J0 uses 8-SOP packaging while other substitutes use 8-SOIC. Both packages are mechanically compatible with standard 8-pin SOIC footprints (0.154" width, 3.90mm). Verify footprint dimensions with component datasheets before PCB design finalization.

Q: Which substitute offers the best thermal performance?

A: IRF7809AVTRPBF, FDS6670A, and FDS8880 all maintain the 2.5W power dissipation rating of the IRF7809ATR. RJK0355DSP-01#J0 is limited to 1.8W. For applications with tight thermal budgets, select among the first three options and verify junction temperature through thermal modeling.

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