IRF7809A N-Channel MOSFET 30V 14.5A Equivalent & Substitute Parts

Part Overview

The IRF7809A is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications requiring 30V drain-to-source voltage capability with 14.5A continuous drain current. This device is part of the HEXFET® series and is packaged in an 8-SOIC form factor.

The IRF7809A has reached obsolete product status. Locating equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. The IRF7821TRPBF serves as the manufacturer-recommended substitute, offering compatible electrical and mechanical characteristics within the same package family.

Substiute Parts

IRF7809A

Infineon TechnologiesIn Stock: 3728IRF7809A Datasheet

Current PartRFQ

IRF7821TRPBF

Infineon TechnologiesIn Stock: 31373IRF7821TRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7809A with the IRF7821TRPBF is based on the following alignment of critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Both devices rated at 30 V, ensuring equivalent voltage withstand capability
• Package / Case: Both use 8-SOIC (0.154", 3.90 mm Width), confirming mechanical and PCB layout compatibility
• Mounting Type: Both are Surface Mount devices, compatible with existing assembly processes
• Gate Threshold Voltage Vgs(th): Both specified at 1 V @ 250 µA, ensuring consistent gate drive requirements
• Power Dissipation (Max): Both rated at 2.5 W, maintaining thermal design margins

Performance Considerations:

• Continuous Drain Current: IRF7821TRPBF rated at 13.6 A versus IRF7809A at 14.5 A (96% of original specification)
• Rds On: IRF7821TRPBF at 9.1 mOhm @ 13A, 10V versus IRF7809A at 8.5 mOhm @ 15A, 4.5V (comparable on-resistance characteristics)
• Gate Charge: IRF7821TRPBF at 14 nC @ 4.5 V versus IRF7809A at 75 nC @ 5 V (reduced gate charge improves switching performance)

Compliance and Availability:

• IRF7821TRPBF holds Active product status with 31,280 units in stock versus IRF7809A Obsolete status with 3,670 units
• IRF7821TRPBF is RoHS3 Compliant; IRF7809A is RoHS non-compliant

Parameter Comparison

Engineering Selection Recommendations

The IRF7821TRPBF is the manufacturer-recommended substitute for the obsolete IRF7809A. Selection of this substitute is supported by the following engineering factors:

Product Status and Supply Chain: The IRF7809A is classified as Obsolete, creating supply constraints for new production and long-term support. The IRF7821TRPBF maintains Active product status with significantly higher inventory availability (31,280 units in stock), ensuring reliable supply for current and future production runs.

Regulatory Compliance: The IRF7821TRPBF is RoHS3 Compliant, meeting current environmental and regulatory requirements for electronic components. The IRF7809A is RoHS non-compliant, which may present compliance challenges for new designs or markets with strict regulatory requirements.

Electrical and Mechanical Compatibility: Both devices share identical voltage ratings (30 V Vdss), gate threshold specifications (1 V @ 250 µA), power dissipation limits (2.5 W), and package geometry (8-SOIC). These parameters ensure direct functional compatibility in existing circuit designs without PCB layout modifications.

Performance Characteristics: The IRF7821TRPBF delivers comparable on-resistance performance (9.1 mOhm @ 13A, 10V) relative to the IRF7809A (8.5 mOhm @ 15A, 4.5V). The continuous drain current rating of 13.6 A in the substitute represents 96% of the original 14.5 A specification, which is acceptable for most applications operating below maximum rated current. The substitute exhibits lower gate charge (14 nC @ 4.5 V versus 75 nC @ 5 V) and significantly lower input capacitance (1010 pF @ 15 V versus 7300 pF @ 16 V), which may improve switching performance and reduce gate drive power requirements.

Gate Voltage Rating: The IRF7821TRPBF supports a maximum gate voltage of ±20 V compared to ±12 V for the IRF7809A, providing additional design margin for gate drive circuits.

Frequently Asked Questions (FAQ)

Q: Can the IRF7821TRPBF be used as a direct replacement for the IRF7809A in existing designs?

A: Yes. Both devices share identical drain-to-source voltage (30 V), gate threshold voltage (1 V @ 250 µA), power dissipation (2.5 W), and package geometry (8-SOIC). No PCB layout modifications are required. The continuous drain current rating of the substitute (13.6 A) is 96% of the original (14.5 A), which is acceptable for applications not operating at maximum rated current.

Q: What are the key electrical differences between these two devices?

A: The primary differences are: (1) Continuous drain current: IRF7821TRPBF at 13.6 A versus IRF7809A at 14.5 A; (2) Gate charge: IRF7821TRPBF at 14 nC @ 4.5 V versus IRF7809A at 75 nC @ 5 V; (3) Input capacitance: IRF7821TRPBF at 1010 pF @ 15 V versus IRF7809A at 7300 pF @ 16 V; (4) Maximum gate voltage: IRF7821TRPBF at ±20 V versus IRF7809A at ±12 V. These differences result in improved switching characteristics and lower gate drive power for the substitute.

Q: Are there any compliance or regulatory differences?

A: Yes. The IRF7821TRPBF is RoHS3 Compliant, while the IRF7809A is RoHS non-compliant. Both devices are REACH Unaffected and classified under ECCN EAR99. For new designs or applications subject to RoHS requirements, the IRF7821TRPBF is the appropriate choice.

Q: What is the availability status of each device?

A: The IRF7809A is Obsolete with 3,670 units in stock. The IRF7821TRPBF is Active with 31,280 units in stock. The substitute offers significantly better long-term supply chain security.

Q: Are the packages physically identical?

A: Yes. Both devices use the 8-SOIC package with dimensions of 0.154" × 3.90 mm width. PCB footprints and assembly processes are fully compatible.

Q: Will the lower gate charge of the IRF7821TRPBF affect gate drive circuit design?

A: The IRF7821TRPBF has substantially lower gate charge (14 nC @ 4.5 V versus 75 nC @ 5 V), which reduces the charge that must be supplied or removed by the gate drive circuit. This typically results in lower gate drive power dissipation and faster switching transitions. Existing gate drive circuits designed for the IRF7809A will operate with improved performance characteristics when driving the IRF7821TRPBF.

Q: Can I use the IRF7821TRPBF in applications requiring the full 14.5 A continuous current rating?

A: The IRF7821TRPBF is rated for 13.6 A continuous drain current. Applications requiring sustained operation at currents above 13.6 A should be evaluated to ensure the substitute meets thermal and electrical requirements. For applications operating below 13.6 A, the substitute is fully suitable.