IRF7807Z N-Channel 30V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7807Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 11A continuous drain current at 25°C. This device is housed in an 8-SO surface mount package and is part of the HEXFET® series. The IRF7807Z is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support and production continuity. Equivalent parts must maintain electrical performance within the specified parameter ranges while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	11	A
Rds On (Max) @ 11A, 10V	13.8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.25	V
Gate Charge (Qg) @ 4.5V	11	nC
Input Capacitance (Ciss) @ 15V	770	pF
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	8-SOIC (0.154", 3.90mm Width)	—

Substitute Part Grouping Explanation

Substitution of the IRF7807Z is determined by strict electrical and mechanical parameter compatibility. The following criteria define acceptable equivalents:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss): Must equal 30V
Continuous Drain Current (Id): Must be ≥11A at 25°C
On-State Resistance (Rds On): Must not exceed 13.8mOhm at rated current and 10V gate drive
Gate Threshold Voltage (Vgs(th)): Must fall within ±20V maximum gate voltage specification
Power Dissipation: Must support minimum 2.5W at Ta
Operating Temperature: Must span -55°C to 150°C

Mechanical Compatibility Requirements:

Mounting Type: Surface Mount only
Package: 8-SOIC footprint with 0.154" (3.90mm) width
Pin configuration: Must be compatible with 8-SO/8-SOIC pinout

Compliance Considerations:

RoHS3 compliance preferred for new designs
MSL rating of 1 (Unlimited) acceptable
REACH unaffected status required

Substitute parts are grouped into two categories: direct electrical equivalents (IRF7807ZTRPBF) and functionally compatible alternatives (DMN3016LSS-13, FDS6690A, FDS8878, RSS100N03TB) that meet all electrical and mechanical requirements while offering improved product status or compliance.

Parameter Comparison

Parameter	IRF7807Z	IRF7807ZTRPBF	DMN3016LSS-13	FDS6690A	FDS8878	RSS100N03TB
Manufacturer	Infineon	Infineon	Diodes Inc.	onsemi	Fairchild	Rohm
Product Status	Obsolete	Not For New Designs	Active	Active	Active	Active
Vdss (V)	30	30	30	30	30	30
Id @ 25°C (A)	11	11	10.3	11	10.2	10
Rds On (Max) @ 10V (mOhm)	13.8	13.8	12	12.5	14	13
Vgs(th) @ 250µA (V)	2.25	2.25	2.5	3	2.5	2.5
Gate Charge (Qg) (nC)	11 @ 4.5V	11 @ 4.5V	25.1 @ 10V	16 @ 5V	26 @ 10V	14 @ 5V
Ciss @ 15V (pF)	770	770	1415	1205	897	1070
Power Dissipation (W)	2.5	2.5	1.5	2.5	2.5	2
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant
Inventory (Pcs)	2460	19457	6838	39900	32800	15465

Engineering Selection Recommendations

Direct Equivalent (Preferred for Legacy Support):

IRF7807ZTRPBF is the direct equivalent of IRF7807Z, offering identical electrical specifications and pinout. This part carries "Not For New Designs" status but maintains full compatibility with existing IRF7807Z designs. IRF7807ZTRPBF is supplied in Cut Tape and Digi-Reel packaging with significantly higher inventory availability (19,457 pcs) compared to the obsolete IRF7807Z (2,460 pcs). RoHS3 compliance makes this suitable for applications requiring regulatory adherence.

Active Alternatives for New Designs:

For new product development, FDS6690A (onsemi) is the primary recommendation. This part maintains the full 11A continuous drain current and 2.5W power dissipation of the original IRF7807Z while offering superior on-state resistance (12.5mOhm vs. 13.8mOhm). FDS6690A is Active status with the highest inventory level (39,900 pcs), RoHS3 compliant, and part of the PowerTrench® series. Gate charge is 16nC at 5V, providing acceptable switching characteristics for most applications.

DMN3016LSS-13 (Diodes Incorporated) provides an alternative with slightly reduced drain current (10.3A) and lower on-state resistance (12mOhm). This part is Active status and RoHS3 compliant but exhibits higher gate charge (25.1nC at 10V) and input capacitance (1415pF), which may impact switching speed in high-frequency applications.

FDS8878 (Fairchild Semiconductor) offers 10.2A continuous drain current with 14mOhm on-state resistance. Active status and high inventory (32,800 pcs) support production continuity. Gate charge of 26nC at 10V represents the highest among alternatives.

RSS100N03TB (Rohm Semiconductor) provides 10A continuous drain current with 13mOhm on-state resistance and the lowest power dissipation (2W). This part is Active status and RoHS3 compliant but features reduced maximum gate voltage specification (20V vs. ±20V) and higher input capacitance (1070pF).

Selection Criteria by Application:

Existing IRF7807Z designs requiring immediate replacement: Use IRF7807ZTRPBF
New designs prioritizing current capacity and power handling: Use FDS6690A
Applications requiring lowest on-state resistance: Use DMN3016LSS-13
High-volume production requiring maximum inventory: Use FDS6690A or FDS8878
Designs with strict power dissipation limits: Use RSS100N03TB

Frequently Asked Questions (FAQ)

Q: Can IRF7807ZTRPBF be used as a direct replacement for IRF7807Z?

A: Yes. IRF7807ZTRPBF is the direct equivalent with identical electrical specifications (30V, 11A, 13.8mOhm Rds On, 2.5W power dissipation) and 8-SOIC pinout. The primary difference is packaging format (Cut Tape/Digi-Reel vs. standard) and RoHS3 compliance. No circuit modifications are required.

Q: What is the minimum drain current requirement for a substitute part?

A: Substitute parts must support continuous drain current of at least 11A at 25°C to maintain electrical equivalence with IRF7807Z. Parts with lower ratings (DMN3016LSS-13 at 10.3A, FDS8878 at 10.2A, RSS100N03TB at 10A) are acceptable only if circuit design margins accommodate the reduced current capacity.

Q: How does on-state resistance affect part selection?

A: On-state resistance (Rds On) directly impacts power dissipation and heat generation. The IRF7807Z specifies 13.8mOhm maximum at 11A and 10V gate drive. Substitute parts with lower Rds On (DMN3016LSS-13 at 12mOhm, FDS6690A at 12.5mOhm) reduce power loss and improve efficiency. Parts with higher Rds On (FDS8878 at 14mOhm) increase thermal load and may require additional cooling considerations.

Q: Are all substitute parts compatible with the 8-SOIC footprint?

A: Yes. All listed substitute parts use 8-SOIC (0.154", 3.90mm width) surface mount packaging with compatible pinout. PCB layout modifications are not required for footprint compatibility.

Q: What is the significance of gate charge differences among substitute parts?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. IRF7807Z specifies 11nC at 4.5V, representing the lowest gate charge among alternatives. Higher gate charge values (DMN3016LSS-13 at 25.1nC, FDS8878 at 26nC) require longer switching times and may increase switching losses in high-frequency applications. Lower gate charge (FDS6690A at 16nC, RSS100N03TB at 14nC) supports faster switching with reduced driver power requirements.

Q: Which substitute part is recommended for RoHS3 compliant designs?

A: IRF7807ZTRPBF, DMN3016LSS-13, FDS6690A, and RSS100N03TB all carry RoHS3 compliance certification. FDS6690A is preferred for new designs due to Active product status, full electrical equivalence (11A, 2.5W), and highest inventory availability.

Q: Can substitute parts with lower drain current ratings be used in IRF7807Z applications?

A: Substitution with lower-rated parts (10A or 10.3A) is permissible only if circuit analysis confirms that peak and continuous current demands do not exceed the substitute part's rating. Design margin reduction must be evaluated against thermal and reliability requirements. Conservative design practice recommends maintaining the original 11A rating.

Q: What packaging options are available for substitute parts?

A: IRF7807ZTRPBF is supplied in Cut Tape and Digi-Reel formats. DMN3016LSS-13 is supplied in Tape & Reel. FDS6690A is supplied in Cut Tape and Digi-Reel. FDS8878 and RSS100N03TB packaging specifications are not detailed but are compatible with standard 8-SOIC handling. Verify packaging format with supplier for production requirements.

Q: How do input capacitance differences impact circuit performance?

A: Input capacitance (Ciss) affects gate drive circuit impedance and switching transient response. IRF7807Z specifies 770pF at 15V. Substitute parts exhibit higher capacitance (DMN3016LSS-13 at 1415pF, FDS6690A at 1205pF, RSS100N03TB at 1070pF, FDS8878 at 897pF), which may increase gate drive current requirements and switching losses. FDS8878 with 897pF provides the closest match to original specifications.

Q: Are there compliance or regulatory differences between substitute parts?

A: All substitute parts maintain REACH unaffected status and EAR99 export classification consistent with IRF7807Z. RoHS3 compliance is available in IRF7807ZTRPBF, DMN3016LSS-13, FDS6690A, and RSS100N03TB. MSL rating of 1 (Unlimited) is standard across all parts, indicating no moisture sensitivity restrictions for storage or handling.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message