IRF7807VTR N-Channel MOSFET 30V 8.3A Equivalent & Substitute Parts

Part Overview

The IRF7807VTR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.3A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The IRF7807VTR is classified as obsolete, necessitating identification of equivalent substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while meeting modern compliance standards.

Key Parameters

Parameter	IRF7807VTR
Drain-to-Source Voltage (Vdss)	30 V
Continuous Drain Current (Id) @ 25°C	8.3 A (Ta)
On-State Resistance (Rds On) @ Id, Vgs	25 mOhm @ 7A, 4.5V
Gate Threshold Voltage (Vgs(th)) @ Id	3 V @ 250 µA
Gate Charge (Qg) @ Vgs	14 nC @ 5 V
Maximum Gate Voltage (Vgs)	±20 V
Power Dissipation (Max)	2.5 W (Ta)
Operating Temperature Range	-55°C to 150°C (TJ)
Package Type	8-SOIC (0.154", 3.90 mm Width)
Mounting Type	Surface Mount
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitute parts for the IRF7807VTR are selected based on strict electrical and mechanical compatibility criteria. All substitute candidates must satisfy the following parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 30 V (exact match required)
Package Type: 8-SOIC (0.154", 3.90 mm Width) (exact match required)
Mounting Type: Surface Mount (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)

Functional Compatibility Parameters:

Continuous Drain Current (Id) @ 25°C: minimum 8.3 A
On-State Resistance (Rds On): maximum 25 mOhm at rated conditions
Gate Threshold Voltage (Vgs(th)): within ±20 V gate voltage range
Operating Temperature Range: minimum -55°C to 150°C
Power Dissipation: minimum 2.5 W

The three substitute parts identified—RSH065N03TB1, STS10N3LH5, and ZXMN3B04N8TA—meet all critical matching parameters and maintain functional compatibility within the specified electrical envelope.

Parameter Comparison

Parameter	IRF7807VTR (Infineon)	RSH065N03TB1 (Rohm)	STS10N3LH5 (STMicroelectronics)	ZXMN3B04N8TA (Diodes)
Drain-to-Source Voltage (Vdss)	30 V	30 V	30 V	30 V
Continuous Drain Current (Id) @ 25°C	8.3 A (Ta)	6.5 A (Ta)	10 A (Tc)	7.2 A (Ta)
On-State Resistance (Rds On) @ Id, Vgs	25 mOhm @ 7A, 4.5V	27 mOhm @ 6.5A, 10V	21 mOhm @ 5A, 10V	25 mOhm @ 7.2A, 4.5V
Gate Threshold Voltage (Vgs(th)) @ Id	3 V @ 250 µA	2.5 V @ 1 mA	1 V @ 250 µA	700 mV @ 250 µA (Min)
Gate Charge (Qg) @ Vgs	14 nC @ 5 V	8.6 nC @ 5 V	4.6 nC @ 5 V	23.1 nC @ 4.5 V
Maximum Gate Voltage (Vgs)	±20 V	±20 V	±22 V	±12 V
Power Dissipation (Max)	2.5 W (Ta)	2 W (Ta)	2.5 W (Tc)	2 W (Ta)
Operating Temperature Range	-55°C to 150°C (TJ)	150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)
Package Type	8-SOIC (0.154", 3.90 mm Width)	8-SOIC (0.154", 3.90 mm Width)	8-SOIC (0.154", 3.90 mm Width)	8-SOIC (0.154", 3.90 mm Width)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Product Status	Obsolete	Active	Not For New Designs	Active
RoHS Status	RoHS Non-Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

RSH065N03TB1 (Rohm Semiconductor)

The RSH065N03TB1 is an active product with ROHS3 compliance. This substitute provides 6.5A continuous drain current, which is lower than the IRF7807VTR specification of 8.3A. The on-state resistance of 27 mOhm at 6.5A, 10V is marginally higher than the original 25 mOhm specification. Power dissipation is rated at 2W, below the original 2.5W. This part is suitable for applications where the 6.5A current rating is sufficient and thermal margins are adequate. The lower gate charge (8.6 nC) provides faster switching characteristics.

STS10N3LH5 (STMicroelectronics)

The STS10N3LH5 is classified as Not For New Designs but remains available with ROHS3 compliance. This substitute exceeds the IRF7807VTR current specification with 10A continuous drain current. The on-state resistance of 21 mOhm at 5A, 10V is superior to the original specification. Power dissipation matches the original at 2.5W. The significantly lower gate charge (4.6 nC) enables faster switching performance. Operating temperature range matches the original specification. This part is suitable for applications requiring higher current capacity or improved thermal performance.

ZXMN3B04N8TA (Diodes Incorporated)

The ZXMN3B04N8TA is an active product with ROHS3 compliance. This substitute provides 7.2A continuous drain current, closely matching the IRF7807VTR specification of 8.3A. The on-state resistance of 25 mOhm at 7.2A, 4.5V matches the original specification exactly. Power dissipation is rated at 2W, slightly below the original 2.5W. The gate threshold voltage is significantly lower at 700 mV minimum, which may affect gate drive circuit design. Maximum gate voltage is limited to ±12V compared to the original ±20V. This part provides the closest electrical match to the original device.

For new designs, RSH065N03TB1 or ZXMN3B04N8TA are preferred due to active product status and full ROHS3 compliance.

Frequently Asked Questions (FAQ)

Q: Can RSH065N03TB1 replace IRF7807VTR in all applications?

A: RSH065N03TB1 is electrically compatible within the 30V, 8-SOIC package specification. However, the 6.5A continuous drain current rating is lower than the IRF7807VTR specification of 8.3A. Applications operating at or near 8.3A continuous current require thermal analysis to confirm adequate margin with the lower current rating and 2W power dissipation limit.

Q: What is the primary difference between STS10N3LH5 and the original IRF7807VTR?

A: STS10N3LH5 provides higher current capacity (10A versus 8.3A) and lower on-state resistance (21 mOhm versus 25 mOhm), resulting in improved thermal performance. The significantly lower gate charge (4.6 nC versus 14 nC) enables faster switching. STS10N3LH5 is classified as Not For New Designs, limiting its use to legacy production support.

Q: Is ZXMN3B04N8TA suitable for direct pin-for-pin replacement?

A: ZXMN3B04N8TA is pin-compatible within the 8-SOIC package and provides equivalent electrical performance at 7.2A continuous drain current with 25 mOhm on-state resistance. However, the maximum gate voltage specification of ±12V is lower than the original ±20V. Gate drive circuits must be verified to operate within the ±12V limit.

Q: Are all substitute parts RoHS compliant?

A: Yes. RSH065N03TB1, STS10N3LH5, and ZXMN3B04N8TA are all ROHS3 compliant. The original IRF7807VTR is RoHS non-compliant. Substitution with any of these parts satisfies modern RoHS compliance requirements.

Q: What is the impact of different gate charge specifications on circuit design?

A: Gate charge directly affects gate drive circuit design and switching speed. ZXMN3B04N8TA (23.1 nC) requires higher gate drive current compared to STS10N3LH5 (4.6 nC). Lower gate charge enables faster switching transitions and reduced switching losses. Gate drive circuits must be rated for the specific gate charge of the selected substitute.

Q: Can these substitutes be used interchangeably in the same PCB layout?

A: All substitute parts use identical 8-SOIC (0.154", 3.90 mm Width) packaging and surface mount configuration. PCB layouts are mechanically compatible without modification. Electrical circuit verification is required to confirm gate drive voltage compatibility and current rating adequacy for the specific application.

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