IRF7807VPBF N-Channel MOSFET 30V 8.3A Equivalent & Substitute Parts

Part Overview

The IRF7807VPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.3A continuous drain current at 25°C. This device is packaged in an 8-SOIC surface mount configuration and is classified as discontinued at DiGi Electronics. The part belongs to the HEXFET® series and operates across a temperature range of -55°C to 150°C (TJ). Due to its discontinued status, equivalent substitute parts with compatible electrical and mechanical specifications are necessary for ongoing design support and procurement.

Substiute Parts

IRF7807VPBF

Infineon TechnologiesIn Stock: 934IRF7807VPBF Datasheet

Current PartRFQ

STS10N3LH5

STMicroelectronicsIn Stock: 15344STS10N3LH5 Datasheet

MFR RecommendedRFQ

ZXMN3B04N8TA

Diodes IncorporatedIn Stock: 6954ZXMN3B04N8TA Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF7807VPBF are qualified based on the following electrical and mechanical compatibility criteria:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 30V minimum
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Mounting Type: Surface Mount
• Operating Temperature Range: -55°C to 150°C (TJ)
• RoHS3 Compliance
• FET Type: N-Channel MOSFET

Functional Compatibility Parameters:

• Continuous Drain Current (Id): Minimum 8.3A or higher
• Rds On (Max): 25 mOhm or lower at specified conditions
• Gate Threshold Voltage: Compatible with 4.5V drive voltage
• Power Dissipation: 2.5W or higher

The substitute parts listed below meet these criteria and are electrically and mechanically interchangeable with the IRF7807VPBF in applications requiring N-Channel 30V MOSFET functionality in 8-SOIC packaging.

Parameter Comparison

Engineering Selection Recommendations

STS10N3LH5 (STMicroelectronics)

The STS10N3LH5 is a manufacturer-recommended substitute with identical Vdss (30V) and package configuration (8-SOIC). It provides higher continuous drain current (10A vs. 8.3A) and lower Rds On (21 mOhm @ 5A, 10V), offering improved performance headroom. The part is RoHS3 compliant and operates across the same temperature range (-55°C to 150°C TJ). However, the product status is listed as "Not For New Designs," which may limit long-term availability for new development projects.

ZXMN3B04N8TA (Diodes Incorporated)

The ZXMN3B04N8TA is a manufacturer-recommended substitute with identical Vdss (30V) and package configuration (8-SOIC). It matches the Rds On specification (25 mOhm @ 7.2A, 4.5V) and operates across the same temperature range (-55°C to 150°C TJ). The continuous drain current is 7.2A, which is slightly lower than the IRF7807VPBF but remains within acceptable operating margins for most applications. This part carries an "Active" product status, indicating ongoing manufacturer support and availability for new designs. RoHS3 compliance is confirmed.

Both substitute parts maintain electrical and mechanical compatibility with the IRF7807VPBF. Selection between them depends on application current requirements and long-term availability considerations.

Frequently Asked Questions (FAQ)

Q: Can the STS10N3LH5 directly replace the IRF7807VPBF in existing designs?

A: Yes. Both parts share identical Vdss (30V), package configuration (8-SOIC), and operating temperature range (-55°C to 150°C TJ). The STS10N3LH5 provides higher current capability (10A vs. 8.3A) and lower on-resistance, making it electrically compatible and functionally superior for the same application space.

Q: What are the key differences between the STS10N3LH5 and ZXMN3B04N8TA?

A: The STS10N3LH5 offers higher continuous drain current (10A vs. 7.2A) and lower gate charge (4.6 nC vs. 23.1 nC), resulting in faster switching characteristics. The ZXMN3B04N8TA matches the original Rds On specification more closely (25 mOhm) and carries an "Active" product status. Both maintain 30V Vdss and 8-SOIC packaging.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IRF7807VPBF, STS10N3LH5, and ZXMN3B04N8TA are all RoHS3 compliant, meeting environmental and regulatory requirements for electronic component manufacturing and use.

Q: Does the 8-SOIC package remain the same across all parts?

A: Yes. All parts use the 8-SOIC package with 0.154" width and 3.90mm dimensions, ensuring mechanical compatibility with existing PCB layouts and footprints.

Q: What is the significance of the "Not For New Designs" status on the STS10N3LH5?

A: This designation indicates that STMicroelectronics is not recommending the STS10N3LH5 for new product development. While the part remains available and functional, designs using this part may face future availability constraints. The ZXMN3B04N8TA, with "Active" status, is preferred for new designs requiring long-term support.

Q: Can I use the ZXMN3B04N8TA if my application requires 8.3A continuous current?

A: The ZXMN3B04N8TA is rated for 7.2A continuous drain current, which is below the 8.3A specification of the IRF7807VPBF. Application suitability depends on actual circuit current demands. If sustained operation at 8.3A is required, the STS10N3LH5 (10A rating) is the appropriate choice.

Q: Are there differences in gate drive voltage requirements?

A: The IRF7807VPBF specifies Rds On at 4.5V gate drive. The STS10N3LH5 specifies Rds On at both 4.5V and 10V, providing flexibility in gate drive circuit design. The ZXMN3B04N8TA specifies Rds On at 4.5V, matching the original part. All three parts are compatible with standard 5V logic gate drive signals.