IRF7807TR Equivalent & Substitute Parts Reference

Part Overview

The IRF7807TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.3A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and is classified as obsolete. Due to its obsolete product status, equivalent substitute parts are necessary for ongoing design support, production continuity, and component sourcing. The substitutes listed maintain electrical and mechanical compatibility within the specified parameter ranges for this MOSFET category.

Substiute Parts

IRF7807TR

Infineon TechnologiesIn Stock: 28882IRF7807TR Datasheet

Current PartRFQ

STS10N3LH5

STMicroelectronicsIn Stock: 15344STS10N3LH5 Datasheet

MFR RecommendedRFQ

ZXMN3B04N8TA

Diodes IncorporatedIn Stock: 6954ZXMN3B04N8TA Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF7807TR are selected based on strict electrical and mechanical parameter alignment. The following criteria determine substitution eligibility:

Primary Matching Criteria:

• Drain to Source Voltage (Vdss): 30V (exact match required)
• FET Type: N-Channel (exact match required)
• Package / Case: 8-SOIC (0.154", 3.90mm Width) (exact match required)
• Mounting Type: Surface Mount (exact match required)
• Technology: MOSFET (Metal Oxide) (exact match required)

Secondary Compatibility Parameters:

• Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 8.3A
• Rds On (Max) @ Id, Vgs: Equal to or less than 25 mOhm
• Drive Voltage (Max Rds On): 4.5V or compatible drive voltage
• Vgs(th) (Max) @ Id: 1V or less
• Gate Charge (Qg) (Max) @ Vgs: Comparable to 17 nC
• Vgs (Max): ±12V or greater
• Power Dissipation (Max): 2.5W or greater

All substitute parts listed meet these criteria and are electrically and mechanically compatible with the IRF7807TR in equivalent circuit applications.

Parameter Comparison

Engineering Selection Recommendations

STS10N3LH5 (STMicroelectronics): This substitute provides 10A continuous drain current, exceeding the IRF7807TR specification of 8.3A. The device maintains 30V Vdss rating and 8-SOIC packaging. Gate charge is significantly lower at 4.6 nC versus 17 nC, resulting in faster switching characteristics. The part is rated "Not For New Designs" but remains available. RoHS3 compliance is achieved, addressing environmental regulatory requirements absent in the original IRF7807TR. Maximum gate voltage extends to ±22V, providing greater gate drive margin.

ZXMN3B04N8TA (Diodes Incorporated): This substitute maintains electrical parameters closely aligned with the IRF7807TR, with 7.2A continuous drain current and identical 25 mOhm Rds On specification at 4.5V drive voltage. The device is classified as Active, ensuring long-term availability and production continuity. RoHS3 compliance is achieved. Gate threshold voltage is lower at 700 mV minimum, improving switching reliability. Power dissipation is rated at 2W, slightly below the original 2.5W specification. This part is suitable for direct replacement in existing designs requiring ongoing component sourcing.

Compliance Considerations: The IRF7807TR is RoHS non-compliant. Both substitute parts achieve ROHS3 compliance, supporting regulatory requirements for new production and environmental standards. Moisture sensitivity level remains at MSL 1 (Unlimited) across all three parts, maintaining equivalent handling requirements.

Frequently Asked Questions (FAQ)

Q: Can STS10N3LH5 directly replace IRF7807TR in all applications?

A: STS10N3LH5 is electrically compatible based on matching Vdss (30V), FET type (N-Channel), and package (8-SOIC). The higher drain current rating (10A vs. 8.3A) and lower gate charge (4.6 nC vs. 17 nC) are advantageous for most applications. However, the lower gate charge results in faster switching, which may require circuit verification in timing-sensitive applications. The part is rated "Not For New Designs," limiting its use to legacy system support.

Q: What is the primary difference between ZXMN3B04N8TA and the original IRF7807TR?

A: ZXMN3B04N8TA maintains nearly identical electrical specifications: 30V Vdss, 7.2A drain current, and 25 mOhm Rds On at 4.5V. The key difference is product status: ZXMN3B04N8TA is Active, ensuring long-term availability, while IRF7807TR is Obsolete. Both achieve RoHS3 compliance. The lower gate threshold voltage (700 mV vs. 1V) in ZXMN3B04N8TA improves switching reliability at lower gate drive levels.

Q: Are all three parts pin-compatible?

A: Yes. All three parts use the 8-SOIC package with identical 0.154" (3.90mm) width and surface mount configuration. Pin-to-pin compatibility is confirmed for direct PCB replacement without layout modifications.

Q: Which substitute is recommended for new production designs?

A: ZXMN3B04N8TA is recommended for new production designs. It is classified as Active, ensuring manufacturer support and long-term availability. It achieves RoHS3 compliance and maintains electrical specifications within acceptable tolerance of the original IRF7807TR. STS10N3LH5 is rated "Not For New Designs" and should be reserved for legacy system support only.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. STS10N3LH5 has significantly lower gate charge (4.6 nC vs. 17 nC), resulting in faster switching transitions and reduced gate drive power consumption. ZXMN3B04N8TA has slightly higher gate charge (23.1 nC), requiring more gate drive energy but providing more stable switching characteristics in some circuit topologies. Circuit verification is recommended when switching frequency or gate drive capability is critical.

Q: What is the impact of RoHS compliance on part selection?

A: IRF7807TR is RoHS non-compliant, restricting its use in applications subject to environmental regulations (EU RoHS Directive, China RoHS, etc.). Both STS10N3LH5 and ZXMN3B04N8TA achieve ROHS3 compliance, making them suitable for regulated markets and new product certifications. For legacy systems without regulatory constraints, RoHS status is not a functional consideration.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Gate charge differences affect switching speed. STS10N3LH5 (4.6 nC) switches faster than IRF7807TR (17 nC), potentially reducing switching losses in high-frequency circuits but requiring verification of gate drive circuit compatibility. ZXMN3B04N8TA (23.1 nC) has higher gate charge, similar to the original part. Circuit simulation or bench testing is recommended for applications operating above 100 kHz to confirm performance equivalence.