IRF7807D2TR N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7807D2TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.3A continuous drain current at 25°C. This device features a Schottky diode and is housed in an 8-SO surface mount package. The IRF7807D2TR is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production support. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering active product status and improved availability.

Substiute Parts

IRF7807D2TR

Infineon TechnologiesIn Stock: 1058IRF7807D2TR Datasheet

Current PartRFQ

FDS4672A

onsemiIn Stock: 8002FDS4672A Datasheet

MFR RecommendedRFQ

RSS100N03TB

Rohm SemiconductorIn Stock: 15552RSS100N03TB Datasheet

MFR RecommendedRFQ

STS10N3LH5

STMicroelectronicsIn Stock: 15344STS10N3LH5 Datasheet

MFR RecommendedRFQ

ZXMN3B04N8TA

Diodes IncorporatedIn Stock: 6954ZXMN3B04N8TA Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF7807D2TR are selected based on the following electrical and mechanical compatibility criteria:

Primary Substitution Parameters:

• Drain to Source Voltage (Vdss): Equal to or greater than 30V
• Continuous Drain Current (Id): Equal to or greater than 8.3A at 25°C
• On-State Resistance (Rds On): Equal to or less than 25 mOhm at rated conditions
• Gate Charge (Qg): Comparable to minimize switching losses
• Maximum Gate Voltage (Vgs): Compatible with ±12V or greater
• Power Dissipation: Equal to or greater than 2.5W
• Package: 8-SOIC surface mount form factor
• RoHS Compliance: ROHS3 compliant preferred for regulatory alignment

Substitution Logic: All substitute parts maintain N-Channel MOSFET technology with 30V or higher Vdss ratings. Current ratings of 7.2A or higher satisfy the 8.3A requirement. On-state resistance values of 25 mOhm or lower ensure equivalent or superior switching performance. Gate charge specifications remain within acceptable ranges for driver compatibility. All substitute parts feature active product status, ensuring long-term availability and supply chain reliability.

Parameter Comparison

Engineering Selection Recommendations

Primary Recommendation: FDS4672A (onsemi)

The FDS4672A is the preferred substitute for the IRF7807D2TR. This part exceeds the electrical requirements with 40V Vdss rating and 11A continuous drain current, providing design margin for voltage transients and thermal stress. The FDS4672A features superior on-state resistance of 13 mOhm, reducing power dissipation in switching applications. Active product status ensures long-term availability and supply chain continuity. ROHS3 compliance aligns with current regulatory requirements. Packaging remains identical at 8-SOIC form factor, enabling direct PCB replacement without layout modifications.

Secondary Recommendation: ZXMN3B04N8TA (Diodes Incorporated)

The ZXMN3B04N8TA provides a direct electrical equivalent with matching 30V Vdss and 25 mOhm on-state resistance specifications. This part maintains identical gate charge characteristics and Vgs maximum rating, ensuring compatibility with existing gate driver circuits. Active product status and ROHS3 compliance support production continuity. The 7.2A continuous drain current is slightly below the main part specification but remains acceptable for applications operating below 8.3A. This substitute is suitable for cost-sensitive applications where electrical equivalence is prioritized.

Tertiary Recommendation: RSS100N03TB (Rohm Semiconductor)

The RSS100N03TB matches the 30V Vdss rating with 10A continuous drain current, exceeding the 8.3A requirement. Superior on-state resistance of 13 mOhm provides improved efficiency. Active product status and ROHS3 compliance ensure regulatory alignment. The 8-SOP package maintains mechanical compatibility with 8-SOIC footprints. This substitute is suitable for applications requiring enhanced thermal performance and lower switching losses.

Not Recommended: STS10N3LH5 (STMicroelectronics)

The STS10N3LH5 carries "Not For New Designs" status, indicating end-of-life trajectory. While electrical parameters are acceptable, this part does not provide the supply chain reliability required for production applications. New designs should avoid this substitute.

Frequently Asked Questions (FAQ)

Q: Can the FDS4672A directly replace the IRF7807D2TR without circuit modifications?

A: Yes. The FDS4672A maintains identical 8-SOIC package dimensions and pinout. The 40V Vdss rating provides additional voltage margin without affecting circuit operation. Gate drive voltage compatibility (±12V) remains unchanged. Direct PCB replacement is possible without schematic modifications.

Q: What is the significance of the on-state resistance (Rds On) difference between substitutes?

A: On-state resistance directly impacts power dissipation and thermal performance. Lower Rds On values reduce I²R losses during conduction. The FDS4672A (13 mOhm) and RSS100N03TB (13 mOhm) provide superior efficiency compared to the main part (25 mOhm). For applications with continuous high current operation, these substitutes reduce junction temperature and extend device lifetime.

Q: Why does the FDS4672A have higher gate charge (49 nC) than the main part (17 nC)?

A: Gate charge correlates with die size and current rating. The FDS4672A's higher current capability (11A vs 8.3A) results in increased gate charge. This requires slightly longer switching times but does not prevent direct substitution. Gate driver circuits must provide sufficient current to charge the gate within acceptable switching frequency limits. Most modern gate drivers accommodate this variation without modification.

Q: Are all substitute parts RoHS compliant?

A: The main part (IRF7807D2TR) is RoHS non-compliant. All recommended substitutes (FDS4672A, RSS100N03TB, ZXMN3B04N8TA) are ROHS3 compliant, meeting current environmental regulations. This compliance improvement is a significant advantage for new production and export markets.

Q: Can the ZXMN3B04N8TA be used in applications requiring the full 8.3A continuous current?

A: The ZXMN3B04N8TA is rated for 7.2A continuous drain current, which is 13% below the main part specification. This substitute is suitable for applications operating at or below 7.2A. For applications requiring the full 8.3A specification, FDS4672A or RSS100N03TB are recommended.

Q: What is the impact of different Vgs (Max) ratings on gate driver compatibility?

A: The main part and most substitutes accept ±12V gate voltage. The STS10N3LH5 accepts ±22V, providing additional margin. The RSS100N03TB accepts 20V. All these ratings are compatible with standard gate driver circuits operating at ±12V or lower. Higher Vgs ratings do not require circuit changes but provide additional safety margin against overvoltage conditions.

Q: Is the 8-SOP package of RSS100N03TB compatible with 8-SOIC PCB footprints?

A: The RSS100N03TB is specified as 8-SOP with identical 0.154" (3.90mm) width to the 8-SOIC standard. Pin pitch and spacing are compatible. Direct footprint replacement is possible, though verification with the specific PCB layout is recommended to confirm pad alignment.

Q: Why is STS10N3LH5 marked "Not For New Designs"?

A: This designation indicates the manufacturer is transitioning the product to end-of-life status. While currently available, supply may become limited. New designs should select parts with "Active" status to ensure long-term availability and manufacturing support. The STS10N3LH5 is suitable only for legacy product maintenance.