IRF7807D2PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7807D2PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.3A continuous drain current at 25°C. This device features a Schottky diode and is housed in an 8-SO surface mount package. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability in existing circuit designs.

Substiute Parts

IRF7807D2PBF

Infineon TechnologiesIn Stock: 874IRF7807D2PBF Datasheet

Current PartRFQ

FDS4672A

onsemiIn Stock: 8002FDS4672A Datasheet

MFR RecommendedRFQ

RSS100N03TB

Rohm SemiconductorIn Stock: 15552RSS100N03TB Datasheet

MFR RecommendedRFQ

STS10N3LH5

STMicroelectronicsIn Stock: 15344STS10N3LH5 Datasheet

MFR RecommendedRFQ

ZXMN3B04N8TA

Diodes IncorporatedIn Stock: 6954ZXMN3B04N8TA Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF7807D2PBF are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): Must be ≥30V to maintain voltage headroom
• Continuous Drain Current (Id): Must be ≥8.3A to support circuit current requirements
• On-Resistance (Rds On): Lower values improve efficiency; values ≤25 mOhm at comparable gate voltage are preferred
• Gate Threshold Voltage (Vgs(th)): Must be compatible with drive circuitry; range of 1V to 2.5V acceptable
• Package Type: 8-SOIC (0.154", 3.90mm Width) for mechanical compatibility
• Mounting Type: Surface Mount for PCB assembly compatibility
• Operating Temperature Range: Must support -55°C to 150°C minimum

Secondary Compatibility Parameters:

• Gate Charge (Qg): Lower values reduce switching losses
• Maximum Gate Voltage (Vgs): Must accommodate ±12V drive signals
• Power Dissipation: Must support 2.5W thermal requirements
• RoHS and REACH Compliance: Required for modern supply chain acceptance

The four substitute parts listed below meet these criteria with varying performance enhancements while maintaining functional equivalence.

Parameter Comparison

Engineering Selection Recommendations

Primary Recommendation: FDS4672A (onsemi)

The FDS4672A is the preferred substitute for new designs and ongoing production. This part exceeds the IRF7807D2PBF specifications with 40V Vdss rating (33% margin above 30V requirement) and 11A continuous drain current (32% above 8.3A requirement). The FDS4672A delivers superior on-resistance performance at 13 mOhm versus 25 mOhm, reducing power dissipation and thermal load. The part maintains 2.5W power dissipation capability and operates across the full -55°C to 175°C temperature range, extending thermal headroom. Active product status ensures long-term availability and supply chain stability. ROHS3 compliance and RoHS certification meet modern regulatory requirements.

Secondary Recommendation: STS10N3LH5 (STMicroelectronics)

The STS10N3LH5 provides direct electrical compatibility with matched 30V Vdss and 10A continuous drain current. This STripFET™ V series device features exceptionally low gate charge at 4.6 nC, reducing switching losses and improving efficiency in high-frequency applications. The part maintains ±22V maximum gate voltage rating, providing enhanced drive signal tolerance. However, product status is classified as "Not For New Designs," limiting its suitability for new development. Existing designs currently using this part may continue procurement from available inventory (15,265 pcs in stock).

Tertiary Recommendation: RSS100N03TB (Rohm Semiconductor)

The RSS100N03TB matches the 30V Vdss rating and exceeds current requirements with 10A continuous drain current. This part delivers 13 mOhm on-resistance, improving efficiency over the original IRF7807D2PBF. Active product status ensures supply chain continuity. However, the maximum gate voltage rating of 20V is lower than the ±12V requirement, requiring verification of drive circuit compatibility. Power dissipation is rated at 2W, slightly below the 2.5W specification.

Alternative Consideration: ZXMN3B04N8TA (Diodes Incorporated)

The ZXMN3B04N8TA provides electrical compatibility with 30V Vdss and 7.2A continuous drain current. This part matches the original on-resistance specification at 25 mOhm and features the lowest gate threshold voltage at 700 mV minimum, enabling low-voltage drive applications. Active product status and ROHS3 compliance support modern supply chains. However, the 7.2A current rating falls below the 8.3A requirement, limiting applicability to designs with reduced current demands or requiring thermal derating analysis.

Frequently Asked Questions (FAQ)

Q1: Can FDS4672A directly replace IRF7807D2PBF in existing PCB layouts?

Yes. Both parts use identical 8-SOIC (0.154", 3.90mm Width) packaging with surface mount configuration. Pin-to-pin compatibility is maintained. The FDS4672A's superior electrical performance (lower Rds On, higher current rating) ensures functional equivalence with improved efficiency margins.

Q2: What is the significance of the 40V Vdss rating on FDS4672A versus the 30V requirement?

The 40V rating provides 33% voltage headroom above the 30V circuit requirement. This margin improves reliability by reducing stress on the semiconductor junction during transient overvoltage events and extends device lifespan in applications with voltage spikes or switching transients.

Q3: Why is STS10N3LH5 marked "Not For New Designs" despite being a suitable substitute?

STMicroelectronics has discontinued active development and marketing of this part. While existing inventory supports current production, the manufacturer does not recommend this part for new circuit designs. Long-term availability cannot be guaranteed. New designs should prioritize FDS4672A or RSS100N03TB for supply chain security.

Q4: Does ZXMN3B04N8TA meet the 8.3A continuous drain current requirement?

The ZXMN3B04N8TA is rated for 7.2A continuous drain current at 25°C, which is 13% below the IRF7807D2PBF specification. This part is suitable only for applications where circuit current demand is ≤7.2A or where thermal derating analysis confirms acceptable operation at reduced current levels.

Q5: Are all substitute parts RoHS3 compliant?

Yes. FDS4672A, RSS100N03TB, STS10N3LH5, and ZXMN3B04N8TA all carry ROHS3 compliance certification. All parts are REACH Unaffected and classified under ECCN EAR99, meeting modern regulatory and supply chain requirements.

Q6: What is the impact of different gate charge (Qg) values on circuit performance?

Gate charge directly affects switching speed and drive circuit power consumption. Lower Qg values (STS10N3LH5 at 4.6 nC) reduce switching losses and enable faster switching transitions. Higher Qg values (FDS4672A at 49 nC) require more drive current but do not prevent substitution. Drive circuit design must accommodate the specified Qg value.

Q7: Can RSS100N03TB operate with ±12V gate drive signals?

RSS100N03TB is rated for maximum gate voltage of 20V, which accommodates ±12V drive signals within specification. However, the asymmetric rating (20V versus ±12V) indicates the part is optimized for positive gate voltage operation. Verify drive circuit design does not exceed 20V in either polarity.

Q8: Which substitute part offers the best thermal performance?

FDS4672A provides the best thermal performance through lowest on-resistance (13 mOhm at 11A, 4.5V) and highest operating temperature range (-55°C to 175°C). These characteristics reduce power dissipation and extend thermal operating margin in high-current or high-frequency applications.