IRF7807D2 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7807D2 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.3A continuous drain current. This device features a Schottky diode and is housed in an 8-SO surface mount package. The IRF7807D2 is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production support. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	IRF7807D2 Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	8.3	A
On-Resistance (Rds On) @ Id, Vgs	25 mOhm @ 7A, 4.5V	—
Gate Threshold Voltage (Vgs(th)) @ Id	1	V @ 250µA
Gate Charge (Qg) @ Vgs	17	nC @ 5V
Maximum Gate Voltage (Vgs Max)	±12	V
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	Non-compliant	—

Substitute Part Grouping Explanation

Substitution logic for the IRF7807D2 is based on the following critical electrical and mechanical parameters:

Primary Compatibility Criteria:

FET Type: N-Channel (mandatory match)
Drain-to-Source Voltage (Vdss): Minimum 30V (equal or higher acceptable)
Continuous Drain Current (Id): Minimum 8.3A (equal or higher acceptable)
Package Type: 8-SOIC surface mount (mechanical compatibility)
Gate Voltage Range (Vgs Max): ±12V minimum (functional compatibility)

Secondary Considerations:

On-Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Equal or higher ratings acceptable
Operating Temperature: Must support -55°C to 150°C range

The four substitute parts listed below meet or exceed the primary compatibility criteria and are suitable for direct replacement in applications where the IRF7807D2 was originally specified.

Parameter Comparison

Parameter	IRF7807D2 (Infineon)	FDS4672A (onsemi)	RSS100N03TB (Rohm)	STS10N3LH5 (STMicroelectronics)	ZXMN3B04N8TA (Diodes)	Unit
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	—
Vdss	30	40	30	30	30	V
Id @ 25°C	8.3	11	10	10	7.2	A
Rds On (Max)	25 @ 7A, 4.5V	13 @ 11A, 4.5V	13 @ 10A, 10V	21 @ 5A, 10V	25 @ 7.2A, 4.5V	mOhm
Vgs(th) @ Id	1 @ 250µA	2 @ 250µA	2.5 @ 1mA	1 @ 250µA	0.7 @ 250µA	V
Qg @ Vgs	17 @ 5V	49 @ 4.5V	14 @ 5V	4.6 @ 5V	23.1 @ 4.5V	nC
Vgs Max	±12	±12	20	±22	±12	V
Power Dissipation (Max)	2.5	2.5	2	2.5	2	W
Operating Temperature	-55 to 150	-55 to 175	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	—
Product Status	Obsolete	Active	Active	Not For New Designs	Active	—
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

FDS4672A (onsemi) — Recommended for New Designs

The FDS4672A is the primary recommended substitute. It exceeds the IRF7807D2 specifications with 40V Vdss rating and 11A continuous drain current. The device delivers superior on-resistance performance (13 mOhm vs. 25 mOhm) and maintains the same 2.5W power dissipation rating. The FDS4672A is ROHS3 compliant and carries Active product status, ensuring long-term availability and manufacturing support. Operating temperature extends to 175°C, providing additional thermal margin. This part is suitable for direct replacement in new designs and production transitions.

RSS100N03TB (Rohm Semiconductor) — Alternative for Matched Vdss

The RSS100N03TB maintains the exact 30V Vdss rating of the original IRF7807D2 while providing 10A continuous drain current. On-resistance is 13 mOhm at 10A and 10V gate drive, representing a 48% improvement over the original specification. This device is ROHS3 compliant with Active product status. The RSS100N03TB is suitable for applications requiring precise voltage matching and is available in high inventory quantities.

STS10N3LH5 (STMicroelectronics) — Legacy Compatibility

The STS10N3LH5 provides electrical compatibility with 30V Vdss and 10A continuous drain current. However, this device carries "Not For New Designs" status, limiting its suitability for new product development. It remains available for legacy system support and maintenance applications. The part is ROHS3 compliant and supports the full -55°C to 150°C operating range.

ZXMN3B04N8TA (Diodes Incorporated) — Marginal Current Rating

The ZXMN3B04N8TA provides 7.2A continuous drain current, which is below the IRF7807D2 specification of 8.3A. This device is suitable only for applications where the actual operating current does not exceed 7.2A. The part maintains 30V Vdss rating and 25 mOhm on-resistance matching. ROHS3 compliance and Active product status support long-term availability. Use this substitute only when application current requirements are confirmed below 7.2A.

Frequently Asked Questions (FAQ)

Q: Can the FDS4672A replace the IRF7807D2 in all applications?

A: The FDS4672A exceeds the IRF7807D2 electrical specifications and is mechanically compatible in the 8-SOIC package. The higher 40V Vdss rating and improved on-resistance provide performance benefits. Verify that the application circuit does not depend on the original 30V Vdss limit. The FDS4672A is suitable for direct replacement in new designs.

Q: Why is the STS10N3LH5 marked "Not For New Designs"?

A: The "Not For New Designs" status indicates that STMicroelectronics has designated this part for legacy support only. While electrically compatible, new product development should use the FDS4672A or RSS100N03TB to ensure long-term supply chain stability and manufacturing support.

Q: What is the significance of the ROHS3 compliance difference?

A: The IRF7807D2 is RoHS non-compliant, while all substitute parts are ROHS3 compliant. This compliance difference is critical for applications subject to environmental regulations. If RoHS compliance is required, select from FDS4672A, RSS100N03TB, STS10N3LH5, or ZXMN3B04N8TA.

Q: Can the ZXMN3B04N8TA be used as a direct replacement?

A: The ZXMN3B04N8TA is electrically compatible only if the application's actual drain current does not exceed 7.2A. The IRF7807D2 specification is 8.3A, so this substitute is suitable only for applications confirmed to operate below 7.2A continuous current. Verify application current requirements before selection.

Q: Are all substitute parts available in the same package?

A: Yes, all substitute parts are housed in the 8-SOIC (0.154", 3.90mm Width) surface mount package, ensuring mechanical compatibility with the original IRF7807D2 footprint. PCB layout modifications are not required for package compatibility.

Q: What is the impact of different gate charge (Qg) values?

A: Gate charge affects switching speed and driver power consumption. The STS10N3LH5 has the lowest gate charge (4.6 nC), resulting in faster switching and lower driver losses. The FDS4672A has higher gate charge (49 nC), which may require driver circuit verification in high-frequency applications. The IRF7807D2 specification is 17 nC, placing it in the mid-range.

Q: Which substitute offers the best thermal performance?

A: The FDS4672A extends the operating temperature range to 175°C (vs. 150°C for the original), providing additional thermal margin. The RSS100N03TB and ZXMN3B04N8TA maintain the 150°C limit. For applications operating near thermal limits, the FDS4672A is preferred.

Q: Is inventory availability a consideration in part selection?

A: Yes. The RSS100N03TB has the highest inventory (15,465 pcs), followed by STS10N3LH5 (15,265 pcs), FDS4672A (7,991 pcs), and ZXMN3B04N8TA (6,871 pcs). For high-volume production, verify substitute part availability with your supplier before design commitment.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message