IRF7807D1PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7807D1PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.3A continuous drain current at 25°C. This device is part of the FETKY™ series and features a Schottky diode (isolated) with 2.5W power dissipation capability in an 8-SO surface mount package.

The IRF7807D1PBF is classified as Obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET topology.

Substiute Parts

IRF7807D1PBF

Infineon TechnologiesIn Stock: 917IRF7807D1PBF Datasheet

Current PartRFQ

FDS4672A

onsemiIn Stock: 8002FDS4672A Datasheet

MFR RecommendedRFQ

RSS065N03TB

Rohm SemiconductorIn Stock: 10128RSS065N03TB Datasheet

MFR RecommendedRFQ

RSS100N03TB

Rohm SemiconductorIn Stock: 15552RSS100N03TB Datasheet

MFR RecommendedRFQ

STS10N3LH5

STMicroelectronicsIn Stock: 15344STS10N3LH5 Datasheet

MFR RecommendedRFQ

ZXMN3B04N8TA

Diodes IncorporatedIn Stock: 6954ZXMN3B04N8TA Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7807D1PBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must be ≥30V to maintain voltage rating compatibility
• Continuous Drain Current (Id): Must be ≥8.3A to support application current requirements
• Rds On (Max): Must be ≤25 mOhm to ensure on-state resistance compatibility
• Gate Threshold Voltage (Vgs(th)): Must be ≤1V to maintain gate drive compatibility
• Package Type: Must be 8-SOIC (0.154", 3.90mm Width) for PCB layout compatibility
• Operating Temperature Range: Must support -55°C to 150°C minimum
• Gate Voltage Rating (Vgs): Must support ±12V minimum

Substitute Parts Identified:

1. FDS4672A (onsemi) – Exceeds voltage and current ratings; improved Rds On performance
2. RSS065N03TB (Rohm Semiconductor) – Matches voltage rating; lower current rating; compatible Rds On
3. RSS100N03TB (Rohm Semiconductor) – Matches voltage rating; exceeds current rating; improved Rds On
4. STS10N3LH5 (STMicroelectronics) – Matches voltage and current ratings; compatible Rds On
5. ZXMN3B04N8TA (Diodes Incorporated) – Matches voltage rating; slightly lower current; compatible Rds On

Parameter Comparison

Engineering Selection Recommendations

Primary Recommendation: FDS4672A (onsemi)

The FDS4672A is the manufacturer-recommended substitute for the IRF7807D1PBF. This part exceeds the voltage rating (40V vs. 30V) and current rating (11A vs. 8.3A), providing design margin. The Rds On performance is superior (13 mOhm vs. 25 mOhm), resulting in lower power dissipation and improved thermal performance. The FDS4672A is Active product status with ROHS3 compliance and PowerTrench® technology. Inventory availability is high (7991 pcs).

Secondary Recommendation: RSS100N03TB (Rohm Semiconductor)

The RSS100N03TB matches the 30V voltage rating and exceeds the current requirement (10A vs. 8.3A). Rds On performance is superior (13 mOhm @ 10A, 10V), and the part is Active status with ROHS3 compliance. This option is suitable for applications requiring exact voltage matching with improved current handling. Inventory availability is excellent (15465 pcs).

Alternative Recommendation: STS10N3LH5 (STMicroelectronics)

The STS10N3LH5 provides direct electrical compatibility with matching 30V/10A ratings and compatible Rds On characteristics (21 mOhm @ 5A, 10V). This part features STripFET™ V technology and is available in high inventory (15265 pcs). However, product status is "Not For New Designs," limiting its use to legacy system support and maintenance applications only.

Lower Current Alternative: ZXMN3B04N8TA (Diodes Incorporated)

The ZXMN3B04N8TA is suitable for applications where the 8.3A current requirement can be met with 7.2A continuous rating. This part offers the lowest gate threshold voltage (700 mV minimum) and is Active status with ROHS3 compliance. Use this option only when application current requirements are confirmed ≤7.2A.

Not Recommended: RSS065N03TB (Rohm Semiconductor)

The RSS065N03TB has a reduced current rating (6.5A vs. 8.3A) and is not suitable as a direct substitute for applications requiring the full 8.3A specification.

Frequently Asked Questions (FAQ)

Q1: Can the FDS4672A replace the IRF7807D1PBF in all applications?

A: Yes, the FDS4672A is the manufacturer-recommended substitute. It exceeds the voltage and current ratings of the IRF7807D1PBF, providing design margin. The superior Rds On performance (13 mOhm vs. 25 mOhm) reduces power dissipation. Both parts use 8-SOIC packaging with identical footprints. Verify gate drive voltage compatibility (both support ±12V minimum).

Q2: What is the difference between the RSS065N03TB and RSS100N03TB?

A: Both are Rohm Semiconductor parts with 30V ratings and 8-SOIC packaging. The RSS065N03TB is rated for 6.5A continuous current, while the RSS100N03TB is rated for 10A. The RSS100N03TB has superior Rds On performance (13 mOhm vs. 26 mOhm) and is the preferred choice for applications requiring the full 8.3A specification of the IRF7807D1PBF.

Q3: Why is STS10N3LH5 marked "Not For New Designs"?

A: The STS10N3LH5 is classified as "Not For New Designs" by STMicroelectronics, indicating it is in the mature/legacy phase of its product lifecycle. This part remains suitable for maintenance, repair, and legacy system support where existing designs are already qualified. For new designs, use Active status alternatives such as FDS4672A or RSS100N03TB.

Q4: Are all substitute parts ROHS3 compliant?

A: Yes, all identified substitute parts (FDS4672A, RSS065N03TB, RSS100N03TB, STS10N3LH5, and ZXMN3B04N8TA) are ROHS3 compliant. The IRF7807D1PBF main part does not specify RoHS status in the provided data.

Q5: Can I use ZXMN3B04N8TA if my application requires 8.3A?

A: No. The ZXMN3B04N8TA is rated for 7.2A continuous drain current, which is below the 8.3A specification of the IRF7807D1PBF. Use this part only in applications where the actual current requirement is confirmed ≤7.2A. For full 8.3A capability, use FDS4672A, RSS100N03TB, or STS10N3LH5.

Q6: Do all substitute parts use the same 8-SOIC package?

A: Yes, all substitute parts use the 8-SOIC (0.154", 3.90mm Width) surface mount package, ensuring PCB layout compatibility with the IRF7807D1PBF. No board redesign is required for package migration.

Q7: What is the gate charge difference between the main part and substitutes?

A: The IRF7807D1PBF has 17 nC gate charge @ 5V. Substitutes range from 4.6 nC (STS10N3LH5) to 49 nC (FDS4672A). Lower gate charge reduces gate drive power requirements and switching losses. Higher gate charge may require stronger gate drive circuits. Verify gate driver capability before selection.

Q8: Which substitute offers the best thermal performance?

A: The FDS4672A and RSS100N03TB both offer superior Rds On performance (13 mOhm) compared to the IRF7807D1PBF (25 mOhm), resulting in lower on-state power dissipation and improved thermal characteristics. The FDS4672A additionally supports operation to 175°C (vs. 150°C for the main part).

Q9: What is the inventory status of each substitute?

A: FDS4672A: 7991 pcs; RSS065N03TB: 10100 pcs; RSS100N03TB: 15465 pcs; STS10N3LH5: 15265 pcs; ZXMN3B04N8TA: 6871 pcs. All parts have adequate stock for production requirements.

Q10: Are there any gate voltage rating differences I should consider?

A: The IRF7807D1PBF supports ±12V gate voltage. Substitutes support: FDS4672A (±12V), RSS065N03TB (±20V), RSS100N03TB (20V), STS10N3LH5 (±22V), and ZXMN3B04N8TA (±12V). Higher gate voltage ratings provide additional design margin but do not require circuit modification if existing gate drive is ±12V or lower.