IRF7807D1 N-Channel MOSFET 30V 8.3A Equivalent & Substitute Parts

Part Overview

The IRF7807D1 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.3A continuous drain current at 25°C. This device features a Schottky diode and is housed in an 8-SO surface mount package. The IRF7807D1 is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while meeting modern compliance standards.

Key Parameters

Parameter	IRF7807D1 Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	8.3	A (Ta)
Rds On (Max) @ Id, Vgs	25 mOhm @ 7A, 4.5V	—
Vgs(th) (Max) @ Id	1	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17	nC @ 5V
Vgs (Max)	±12	V
Power Dissipation (Max)	2.5	W (Tc)
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
Product Status	Obsolete	—
RoHS Status	RoHS non-compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IRF7807D1 are selected based on strict electrical and mechanical compatibility criteria. All substitute candidates must satisfy the following requirements:

Mandatory Matching Parameters:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V (exact match)
Package / Case: 8-SOIC (0.154", 3.90mm Width) (exact match)
Mounting Type: Surface Mount

Compatible Operating Parameters:

Continuous Drain Current (Id): Minimum 8.3A at 25°C
Rds On (Max): Not to exceed 26 mOhm at rated conditions
Gate Charge (Qg): Acceptable range up to 23 nC
Vgs (Max): Minimum ±12V

Compliance Considerations: Substitute parts meeting ROHS3 compliance are preferred for new designs. Parts with active product status are prioritized over obsolete or not-for-new-designs classifications.

The four substitute parts listed below meet all mandatory electrical and mechanical parameters while offering improved compliance and availability compared to the obsolete IRF7807D1.

Parameter Comparison

Parameter	IRF7807D1	MCQ4822-TP	RSS065N03TB	STS10N3LH5	ZXMN3B04N8TA	Unit
Manufacturer	Infineon	Micro Commercial Co	Rohm Semiconductor	STMicroelectronics	Diodes Incorporated	—
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	—
Vdss	30	30	30	30	30	V
Id @ 25°C	8.3	8.5	6.5	10	7.2	A (Ta/Tc)
Rds On (Max)	25 @ 7A, 4.5V	26 @ 6A, 4.5V	26 @ 6.5A, 10V	21 @ 5A, 10V	25 @ 7.2A, 4.5V	mOhm
Vgs(th) (Max)	1 @ 250µA	3 @ 250µA	2.5 @ 1mA	1 @ 250µA	0.7 @ 250µA	V
Gate Charge (Qg)	17 @ 5V	23 @ 10V	6.1 @ 5V	4.6 @ 5V	23.1 @ 4.5V	nC
Vgs (Max)	±12	±20	±20	±22	±12	V
Power Dissipation (Max)	2.5 (Tc)	1.4 (Ta)	2 (Ta)	2.5 (Tc)	2 (Ta)	W
Package / Case	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	—
Product Status	Obsolete	Active	Active	Not For New Designs	Active	—
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Primary Substitute: MCQ4822-TP (Micro Commercial Co)

The MCQ4822-TP is the manufacturer-recommended substitute for the IRF7807D1. This device maintains 30V Vdss rating with 8.5A continuous drain current, exceeding the original 8.3A specification. Rds On of 26 mOhm at 6A, 4.5V is within acceptable tolerance. The MCQ4822-TP holds active product status and ROHS3 compliance, making it suitable for new designs. Packaging is identical 8-SOIC format. Higher Vgs (Max) of ±20V provides improved gate drive margin.

Secondary Substitute: ZXMN3B04N8TA (Diodes Incorporated)

The ZXMN3B04N8TA provides 7.2A continuous drain current at 25°C with 25 mOhm Rds On at 7.2A, 4.5V—matching the original device's on-resistance specification. This part maintains active product status and ROHS3 compliance. Gate threshold voltage is lower at 700 mV minimum, providing faster switching response. Identical 8-SOIC package and ±12V Vgs (Max) match the original IRF7807D1 gate drive requirements.

Tertiary Substitute: STS10N3LH5 (STMicroelectronics)

The STS10N3LH5 offers the highest continuous drain current at 10A (Tc), with superior Rds On of 21 mOhm at 5A, 10V. Power dissipation remains at 2.5W (Tc), matching the original specification. However, this device carries "Not For New Designs" status, limiting its use to legacy production support. ROHS3 compliance and identical 8-SOIC packaging are maintained.

Not Recommended: RSS065N03TB (Rohm Semiconductor)

The RSS065N03TB provides only 6.5A continuous drain current, falling below the IRF7807D1's 8.3A requirement. While ROHS3 compliant and active, this device does not meet minimum current specifications for direct substitution.

Compliance Priority:

For new designs, select MCQ4822-TP or ZXMN3B04N8TA, both offering active status and ROHS3 compliance. For legacy production continuation, STS10N3LH5 remains available with ROHS3 compliance despite its not-for-new-designs classification.

Frequently Asked Questions (FAQ)

Q1: Can the MCQ4822-TP directly replace the IRF7807D1 without circuit modification?

A: Yes. The MCQ4822-TP maintains identical 30V Vdss rating, 8-SOIC package, and surface mount configuration. Continuous drain current of 8.5A exceeds the original 8.3A specification. Rds On of 26 mOhm is within acceptable tolerance of the original 25 mOhm. No circuit modifications are required for direct substitution.

Q2: What is the primary difference between MCQ4822-TP and ZXMN3B04N8TA?

A: Both are active, ROHS3-compliant substitutes. MCQ4822-TP provides 8.5A drain current with higher Vgs (Max) of ±20V, offering greater gate drive flexibility. ZXMN3B04N8TA provides 7.2A drain current with lower gate threshold voltage (700 mV minimum), enabling faster switching. Selection depends on application requirements for current capacity versus switching speed.

Q3: Why is STS10N3LH5 marked "Not For New Designs"?

A: STMicroelectronics has designated this part for legacy production support only. While technically superior with 10A drain current and 21 mOhm Rds On, new designs should prioritize MCQ4822-TP or ZXMN3B04N8TA for long-term availability and support.

Q4: Is the RSS065N03TB suitable as a substitute?

A: No. The RSS065N03TB provides only 6.5A continuous drain current, which is below the IRF7807D1's 8.3A requirement. This device does not meet minimum electrical specifications for direct substitution.

Q5: Are all substitute parts RoHS compliant?

A: All four substitute parts listed (MCQ4822-TP, RSS065N03TB, STS10N3LH5, ZXMN3B04N8TA) are ROHS3 compliant. The original IRF7807D1 is RoHS non-compliant, making substitution necessary for applications requiring RoHS compliance.

Q6: Do the substitute parts use the same package footprint?

A: Yes. All substitute parts use the 8-SOIC (0.154", 3.90mm Width) package, identical to the IRF7807D1. PCB layout and footprints require no modification.

Q7: What is the significance of gate charge (Qg) differences?

A: Gate charge affects switching speed and driver power requirements. The IRF7807D1 specifies 17 nC at 5V. MCQ4822-TP and ZXMN3B04N8TA both specify 23 nC, requiring slightly higher driver current but remaining within acceptable limits for standard gate drivers. STS10N3LH5 specifies only 4.6 nC, enabling faster switching with lower driver power.

Q8: Can I use these substitutes in high-temperature applications?

A: All substitute parts support operating temperatures from -55°C to 150°C (junction temperature). Verify thermal management design to ensure junction temperature remains within specified limits under maximum power dissipation conditions.

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