IRF7807ATR N-Channel MOSFET 30V 8.3A Equivalent & Substitute Parts

Part Overview

The IRF7807ATR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.3A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The IRF7807ATR is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and component procurement.

Substitution becomes necessary when the original part reaches end-of-life status or when inventory becomes unavailable. Alternative N-Channel MOSFETs with matching electrical and mechanical parameters can fulfill the same functional role in circuit applications.

Key Parameters

Parameter	IRF7807ATR	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	8.3	A
On-Resistance (Rds On) @ 7A, 4.5V	25	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V
Gate Charge (Qg) @ 5V	17	nC
Maximum Gate Voltage (Vgs)	±12	V
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	-
Mounting Type	Surface Mount	-
Product Status	Obsolete	-

Substitute Part Grouping Explanation

Substitution of N-Channel MOSFETs is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Package Type: Must be 8-SOIC (0.154", 3.90mm Width) for mechanical compatibility
Mounting Type: Surface Mount required
Continuous Drain Current (Id): Minimum 8.3A at 25°C or equivalent temperature rating
On-Resistance (Rds On): Must not exceed specified values at rated conditions
Gate Threshold Voltage (Vgs(th)): Must be compatible with 4.5V drive voltage
Maximum Gate Voltage (Vgs): Must accommodate ±12V or greater

Substitute Parts Identified:

RSH065N03TB1 (Rohm Semiconductor) – Active product status, RoHS3 compliant
STS10N3LH5 (STMicroelectronics) – Not for new designs, RoHS3 compliant
ZXMN3B04N8TA (Diodes Incorporated) – Active product status, RoHS3 compliant

All three substitute parts meet the core electrical requirements of 30V Vdss, 8-SOIC package, and surface mount configuration. Each part maintains compatibility with the original circuit topology and PCB layout.

Parameter Comparison

Parameter	IRF7807ATR (Infineon)	RSH065N03TB1 (Rohm)	STS10N3LH5 (STMicroelectronics)	ZXMN3B04N8TA (Diodes)	Unit
Drain-to-Source Voltage (Vdss)	30	30	30	30	V
Continuous Drain Current (Id) @ 25°C	8.3	6.5	10	7.2	A
On-Resistance (Rds On)	25 @ 7A, 4.5V	27 @ 6.5A, 10V	21 @ 5A, 10V	25 @ 7.2A, 4.5V	mOhm
Gate Threshold Voltage (Vgs(th))	1 @ 250µA	2.5 @ 1mA	1 @ 250µA	0.7 @ 250µA	V
Gate Charge (Qg) @ 5V	17	8.6	4.6	23.1 @ 4.5V	nC
Maximum Gate Voltage (Vgs)	±12	±20	±22	±12	V
Power Dissipation (Max)	2.5	2	2.5	2	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package Type	8-SOIC	8-SOIC	8-SOIC	8-SOIC	-
RoHS Status	Non-compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant	-
Product Status	Obsolete	Active	Not For New Designs	Active	-

Engineering Selection Recommendations

For Active Product Designs:

ZXMN3B04N8TA (Diodes Incorporated) is the primary recommendation for new designs. This part maintains active product status, carries RoHS3 compliance, and provides electrical parameters closely aligned with the IRF7807ATR. The gate threshold voltage of 700mV is lower than the original, enabling faster switching response. On-resistance of 25mOhm at 7.2A and 4.5V matches the original specification. Continuous drain current of 7.2A is within acceptable range for most applications originally designed for 8.3A.

For Existing Production Support:

RSH065N03TB1 (Rohm Semiconductor) serves as an alternative for ongoing production. This part is actively manufactured and RoHS3 compliant. The continuous drain current of 6.5A is lower than the original 8.3A, requiring thermal analysis for applications operating at maximum current. On-resistance of 27mOhm at 6.5A and 10V is slightly higher than the original. Gate charge of 8.6nC is significantly lower, reducing switching losses.

For Legacy System Maintenance:

STS10N3LH5 (STMicroelectronics) is available for legacy system support despite "Not For New Designs" status. This part offers the highest continuous drain current at 10A, exceeding original specifications. On-resistance of 21mOhm at 5A and 10V provides superior performance. Gate charge of 4.6nC is the lowest among all options, minimizing gate drive requirements. RoHS3 compliance and wide temperature range support legacy applications.

Compliance Considerations:

All three substitute parts are RoHS3 compliant, addressing environmental regulations. The original IRF7807ATR is RoHS non-compliant. Selection should account for end-product regulatory requirements and supply chain policies regarding RoHS compliance.

Frequently Asked Questions (FAQ)

Q: Can ZXMN3B04N8TA directly replace IRF7807ATR without circuit modification?

A: ZXMN3B04N8TA is mechanically and electrically compatible for direct substitution in the 8-SOIC package. The gate threshold voltage of 700mV is lower than the original 1V, which may improve switching speed. Continuous drain current of 7.2A is slightly below the original 8.3A; thermal analysis is required for applications operating near maximum current limits.

Q: What is the difference between the three substitute parts in terms of current handling?

A: STS10N3LH5 provides the highest continuous drain current at 10A, exceeding original specifications. ZXMN3B04N8TA offers 7.2A, closely matching the original 8.3A. RSH065N03TB1 provides the lowest at 6.5A, requiring thermal verification for high-current applications.

Q: Are all substitute parts RoHS compliant?

A: Yes. RSH065N03TB1, STS10N3LH5, and ZXMN3B04N8TA are all RoHS3 compliant. The original IRF7807ATR is RoHS non-compliant. Substitution with any of these parts upgrades compliance status for new production runs.

Q: Which substitute part has the lowest on-resistance?

A: STS10N3LH5 has the lowest on-resistance at 21mOhm when measured at 5A and 10V gate voltage. This reduces power dissipation and heat generation compared to the original 25mOhm specification.

Q: Can I use RSH065N03TB1 in high-current applications originally designed for IRF7807ATR?

A: RSH065N03TB1 is rated for 6.5A continuous drain current, which is lower than the original 8.3A. Applications requiring sustained currents above 6.5A require thermal analysis and potentially circuit redesign to ensure safe operation within power dissipation limits.

Q: What is the impact of different gate charge specifications on circuit design?

A: Gate charge affects switching speed and gate drive power requirements. STS10N3LH5 has the lowest gate charge at 4.6nC, requiring minimal gate drive current. ZXMN3B04N8TA has the highest at 23.1nC, requiring more robust gate drive circuitry. The original IRF7807ATR at 17nC falls between these values.

Q: Are there any temperature rating differences between substitute parts?

A: All parts, including the original IRF7807ATR, support the same operating temperature range of -55°C to 150°C. Temperature ratings are equivalent across all options.

Q: Which substitute part is recommended for new product development?

A: ZXMN3B04N8TA is recommended for new designs due to active product status, RoHS3 compliance, and electrical parameters closely matching the original IRF7807ATR. This ensures long-term availability and regulatory compliance.

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