IRF7807APBF Equivalent & Substitute Parts

Part Overview

The IRF7807APBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.3A continuous drain current. This device is packaged in an 8-SOIC surface mount configuration and is classified as Obsolete product status. Due to its obsolete classification, equivalent and substitute parts are necessary for ongoing design support, production continuity, and component sourcing in applications requiring N-Channel MOSFET functionality within the specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	8.3	A
Rds On (Max) @ Id, Vgs	25 mOhm @ 7A, 4.5V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	1	V @ 250µA
Gate Charge (Qg) @ Vgs	17	nC @ 5V
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	Surface Mount
Maximum Gate Voltage (Vgs)	±12	V

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7807APBF is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss) must equal or exceed 30V
Continuous Drain Current (Id) must meet or exceed 8.3A at 25°C
On-state resistance (Rds On) must not exceed 25 mOhm at the specified gate voltage
Gate threshold voltage (Vgs(th)) must be compatible with 1V @ 250µA
Maximum gate voltage (Vgs) must accommodate ±12V operation
Power dissipation capability must support 2.5W minimum

Mechanical Compatibility Requirements:

Package must be 8-SOIC (0.154", 3.90mm Width) surface mount configuration
Mounting type must be surface mount
Moisture sensitivity level must be MSL 1 (Unlimited) or equivalent

Regulatory Compliance:

REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095

The substitute parts listed below satisfy all electrical and mechanical compatibility criteria within the allowed parameter ranges.

Parameter Comparison

Parameter	IRF7807APBF (Main)	STS10N3LH5	ZXMN3B04N8TA
Manufacturer	Infineon Technologies	STMicroelectronics	Diodes Incorporated
Product Status	Obsolete	Not For New Designs	Active
FET Type	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	30 V	30 V	30 V
Continuous Drain Current (Id) @ 25°C	8.3 A	10 A	7.2 A
Rds On (Max) @ Id, Vgs	25 mOhm @ 7A, 4.5V	21 mOhm @ 5A, 10V	25 mOhm @ 7.2A, 4.5V
Gate Threshold Voltage (Vgs(th)) @ Id	1 V @ 250µA	1 V @ 250µA	700 mV @ 250µA (Min)
Gate Charge (Qg) @ Vgs	17 nC @ 5V	4.6 nC @ 5V	23.1 nC @ 4.5V
Maximum Gate Voltage (Vgs)	±12 V	±22 V	±12 V
Power Dissipation (Max)	2.5 W	2.5 W	2 W
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Package Type	8-SOIC	8-SOIC	8-SOIC
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99	EAR99
HTSUS	8541.29.0095	8541.29.0095	8541.29.0095

Engineering Selection Recommendations

STS10N3LH5 (STMicroelectronics)

The STS10N3LH5 is classified as Not For New Designs but remains a valid substitute for the obsolete IRF7807APBF. This device exceeds the electrical requirements with 10A continuous drain current and maintains identical 30V Vdss rating. The lower gate charge (4.6 nC @ 5V) compared to the main part (17 nC @ 5V) provides improved switching performance. The extended maximum gate voltage rating (±22V) offers additional design margin. Compliance with ROHS3 and REACH Unaffected status ensures regulatory alignment. This substitute is suitable for applications requiring higher current capacity than the original specification.

ZXMN3B04N8TA (Diodes Incorporated)

The ZXMN3B04N8TA is classified as Active product status, providing the longest lifecycle support among available substitutes. This device maintains electrical compatibility with 7.2A continuous drain current and 30V Vdss rating. The on-state resistance specification (25 mOhm @ 7.2A, 4.5V) matches the main part exactly. The lower gate threshold voltage minimum (700 mV @ 250µA) ensures reliable gate drive compatibility. ROHS3 compliance and REACH Unaffected status confirm regulatory conformance. This substitute is recommended for new production designs requiring component continuity and long-term availability.

Both substitute parts maintain identical package configuration (8-SOIC), mounting type (Surface Mount), and thermal operating range (-55°C to 150°C) as the original IRF7807APBF.

Frequently Asked Questions (FAQ)

Q: Can the STS10N3LH5 directly replace the IRF7807APBF in existing designs?

A: The STS10N3LH5 is electrically compatible as a direct replacement. Both devices share identical 30V Vdss rating, 8-SOIC package configuration, and operating temperature range. The STS10N3LH5 provides higher continuous drain current (10A vs. 8.3A), lower gate charge, and extended gate voltage rating (±22V vs. ±12V). Pin-to-pin compatibility and surface mount footprint are identical. No PCB modifications are required.

Q: What is the difference between the ZXMN3B04N8TA and STS10N3LH5?

A: Both devices are electrically compatible substitutes for the IRF7807APBF. The primary differences are: (1) Product Status—ZXMN3B04N8TA is Active while STS10N3LH5 is Not For New Designs; (2) Continuous Drain Current—ZXMN3B04N8TA provides 7.2A while STS10N3LH5 provides 10A; (3) Gate Charge—ZXMN3B04N8TA has 23.1 nC @ 4.5V while STS10N3LH5 has 4.6 nC @ 5V; (4) Maximum Gate Voltage—ZXMN3B04N8TA is ±12V while STS10N3LH5 is ±22V. For new designs, ZXMN3B04N8TA is preferred due to Active status.

Q: Are there package compatibility concerns when substituting these parts?

A: No package compatibility concerns exist. All three devices—IRF7807APBF, STS10N3LH5, and ZXMN3B04N8TA—use identical 8-SOIC (0.154", 3.90mm Width) surface mount packaging. Pin assignments, footprint dimensions, and mounting requirements are identical. Existing PCB designs require no modification for component substitution.

Q: What is the significance of the Obsolete product status for the IRF7807APBF?

A: Obsolete status indicates the IRF7807APBF is no longer manufactured or supported by Infineon Technologies. This classification necessitates component substitution for ongoing production and design support. The substitute parts listed—particularly ZXMN3B04N8TA with Active status—provide equivalent functionality with assured long-term availability and manufacturer support.

Q: How do the on-state resistance specifications compare across these devices?

A: The IRF7807APBF and ZXMN3B04N8TA both specify 25 mOhm maximum on-state resistance at their respective gate drive conditions (4.5V). The STS10N3LH5 specifies 21 mOhm @ 5A, 10V, which is lower and provides improved efficiency. All three devices meet the electrical requirement for on-state resistance performance within the 30V, 8.3A+ operating envelope.

Q: What regulatory compliance information applies to these substitutes?

A: All three devices—IRF7807APBF, STS10N3LH5, and ZXMN3B04N8TA—share identical regulatory classifications: REACH Unaffected status, ECCN EAR99, and HTSUS 8541.29.0095. The substitute parts additionally carry ROHS3 compliance certification. Moisture sensitivity level is MSL 1 (Unlimited) for all devices, indicating no special moisture handling requirements during storage or assembly.

Q: Can the ZXMN3B04N8TA be used in applications requiring the full 8.3A continuous drain current specification?

A: The ZXMN3B04N8TA is rated for 7.2A continuous drain current, which is below the IRF7807APBF specification of 8.3A. For applications requiring the full 8.3A specification, the STS10N3LH5 with 10A rating is the appropriate substitute. For applications operating below 7.2A, the ZXMN3B04N8TA is suitable and provides Active product status for long-term availability.

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