IRF7807A N-Channel MOSFET 30V 8.3A Equivalent & Substitute Parts

Part Overview

The IRF7807A is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.3A continuous drain current. This device is part of the HEXFET® series and is housed in an 8-SO surface mount package. The IRF7807A is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production support. Substitute parts must maintain compatibility across drain-to-source voltage, continuous drain current, gate charge characteristics, and surface mount packaging to ensure functional equivalence in circuit applications.

Substiute Parts

IRF7807A

Infineon TechnologiesIn Stock: 865IRF7807A Datasheet

Current PartRFQ

RSH065N03TB1

Rohm SemiconductorIn Stock: 1564RSH065N03TB1 Datasheet

MFR RecommendedRFQ

STS10N3LH5

STMicroelectronicsIn Stock: 15344STS10N3LH5 Datasheet

MFR RecommendedRFQ

ZXMN3B04N8TA

Diodes IncorporatedIn Stock: 6954ZXMN3B04N8TA Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7807A is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal 30V
• Continuous Drain Current (Id): Must be equal to or greater than 8.3A
• FET Type: N-Channel only
• Technology: MOSFET (Metal Oxide)
• Package: 8-SOIC (0.154", 3.90mm Width) surface mount
• Gate Charge (Qg): Lower values acceptable; higher values require circuit validation
• On-State Resistance (Rds On): Lower or equal values acceptable
• Operating Temperature Range: Must support -55°C to 150°C or equivalent

Substitute Parts Identified:

1. RSH065N03TB1 (Rohm Semiconductor) – Active product status; meets voltage and package requirements; continuous drain current 6.5A (below IRF7807A specification)
2. STS10N3LH5 (STMicroelectronics) – Not For New Designs status; meets voltage and package requirements; continuous drain current 10A (exceeds IRF7807A specification)
3. ZXMN3B04N8TA (Diodes Incorporated) – Active product status; meets voltage and package requirements; continuous drain current 7.2A (below IRF7807A specification)

All substitute parts share the same 30V Vdss rating, 8-SOIC package footprint, and N-Channel MOSFET technology. Differences in continuous drain current, gate charge, and on-state resistance are documented in the parameter comparison table below.

Parameter Comparison

Engineering Selection Recommendations

IRF7807A (Infineon) – Obsolete Status: The IRF7807A is classified as obsolete and is not recommended for new designs. Existing inventory (780 pcs) is available for legacy system support only. RoHS non-compliance limits use in regulated applications.

RSH065N03TB1 (Rohm Semiconductor) – Active Status: RSH065N03TB1 is an active product with ROHS3 compliance. Continuous drain current is rated at 6.5A, which is 1.8A below the IRF7807A specification. This part is suitable for applications where the required drain current does not exceed 6.5A. Gate charge is significantly lower (8.6 nC vs. 17 nC), resulting in faster switching characteristics. On-state resistance is comparable (27 mOhm vs. 25 mOhm). Inventory availability is high (1462 pcs). Packaging is Tape & Reel (TR).

STS10N3LH5 (STMicroelectronics) – Not For New Designs Status: STS10N3LH5 is classified as Not For New Designs and is part of the STripFET™ V series. Continuous drain current is rated at 10A, exceeding the IRF7807A by 1.7A. Gate charge is significantly lower (4.6 nC vs. 17 nC), enabling faster switching. On-state resistance is superior (21 mOhm vs. 25 mOhm). ROHS3 compliance is confirmed. Operating temperature range matches the IRF7807A (-55°C to 150°C). Inventory is substantial (15265 pcs). This part is suitable for legacy system maintenance but not recommended for new designs due to product status.

ZXMN3B04N8TA (Diodes Incorporated) – Active Status: ZXMN3B04N8TA is an active product with ROHS3 compliance. Continuous drain current is rated at 7.2A, which is 1.1A below the IRF7807A specification. Gate charge is higher (23.1 nC vs. 17 nC), resulting in slower switching characteristics. On-state resistance is equivalent (25 mOhm vs. 25 mOhm). Operating temperature range matches the IRF7807A (-55°C to 150°C). Inventory availability is high (6871 pcs). Packaging is Cut Tape (CT). This part is suitable for applications where the required drain current does not exceed 7.2A.

Recommendation Summary: For new designs requiring 30V, 8.3A N-Channel MOSFET in 8-SOIC package, use ZXMN3B04N8TA (Diodes Incorporated, Active) or RSH065N03TB1 (Rohm Semiconductor, Active) based on specific current requirements. For legacy system support where higher current capacity is acceptable, STS10N3LH5 (STMicroelectronics) is available despite Not For New Designs status.

Frequently Asked Questions (FAQ)

Q1: Can RSH065N03TB1 replace IRF7807A in all applications?

RSH065N03TB1 has a continuous drain current rating of 6.5A compared to IRF7807A's 8.3A. It can replace IRF7807A only in applications where the actual drain current does not exceed 6.5A. Gate charge is lower (8.6 nC vs. 17 nC), which improves switching speed. On-state resistance is comparable (27 mOhm vs. 25 mOhm). Verify circuit current requirements before substitution.

Q2: Why is STS10N3LH5 marked as "Not For New Designs"?

STS10N3LH5 is classified as Not For New Designs by STMicroelectronics, indicating the manufacturer is phasing out this product line. However, it remains available for legacy system support and maintenance. New designs should use active products such as ZXMN3B04N8TA or RSH065N03TB1.

Q3: Are all substitute parts pin-compatible with IRF7807A?

All substitute parts use the 8-SOIC (0.154", 3.90mm Width) package, which is mechanically and electrically compatible with IRF7807A. Pin assignments for N-Channel MOSFETs in this package are standardized (Gate, Drain, Source). Verify PCB footprint compatibility before assembly.

Q4: What is the impact of different gate charge values on circuit performance?

Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (STS10N3LH5 at 4.6 nC) results in faster switching and lower gate drive power consumption. Higher gate charge (ZXMN3B04N8TA at 23.1 nC) requires more gate drive energy but may provide better noise immunity. Select based on gate driver capability and switching frequency requirements.

Q5: Which substitute part has the best RoHS compliance status?

All three substitute parts (RSH065N03TB1, STS10N3LH5, ZXMN3B04N8TA) are ROHS3 compliant. The original IRF7807A is RoHS non-compliant. For regulated applications requiring RoHS compliance, any of the three substitutes is acceptable.

Q6: What is the difference between continuous drain current ratings?

Continuous drain current (Id) is the maximum DC current the MOSFET can conduct indefinitely at 25°C without exceeding thermal limits. IRF7807A is rated at 8.3A. RSH065N03TB1 is rated at 6.5A (1.8A lower), STS10N3LH5 at 10A (1.7A higher), and ZXMN3B04N8TA at 7.2A (1.1A lower). Select a substitute with Id rating equal to or greater than the application's maximum continuous current requirement.

Q7: Can I use ZXMN3B04N8TA as a direct drop-in replacement?

ZXMN3B04N8TA is mechanically and electrically compatible with IRF7807A. Both have identical Vdss (30V), comparable Rds On (25 mOhm), and matching operating temperature range (-55°C to 150°C). Continuous drain current is 7.2A (1.1A below IRF7807A). If circuit current does not exceed 7.2A, ZXMN3B04N8TA is a direct drop-in replacement with improved RoHS compliance and active product status.

Q8: What packaging formats are available for substitute parts?

RSH065N03TB1 is supplied in Tape & Reel (TR) format. STS10N3LH5 is available in Cut Tape (CT) & Digi-Reel® format. ZXMN3B04N8TA is supplied in Cut Tape (CT) format. All are surface mount 8-SOIC packages suitable for automated assembly.

Q9: Are there thermal performance differences between substitute parts?

Power dissipation ratings are: IRF7807A 2.5W, RSH065N03TB1 2W, STS10N3LH5 2.5W, and ZXMN3B04N8TA 2W. Lower power dissipation indicates better thermal efficiency at equivalent current levels. On-state resistance (Rds On) directly affects power dissipation: lower Rds On generates less heat. STS10N3LH5 has the lowest Rds On (21 mOhm), resulting in superior thermal performance.

Q10: Which substitute part has the longest lead time availability?

Current inventory levels are: RSH065N03TB1 (1462 pcs), STS10N3LH5 (15265 pcs), and ZXMN3B04N8TA (6871 pcs). STS10N3LH5 has the highest inventory. However, product status should be prioritized: active products (RSH065N03TB1, ZXMN3B04N8TA) are recommended for new designs despite lower inventory compared to the Not For New Designs part (STS10N3LH5).