IRF7807 Equivalent & Substitute Parts

Part Overview

The IRF7807 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 8.3A continuous drain current at 25°C. This device is packaged in an 8-SO surface mount configuration and is part of the HEXFET® series. The IRF7807 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain compatibility across voltage ratings, current handling, thermal characteristics, and package specifications to ensure functional equivalence in circuit applications.

Key Parameters

Parameter	IRF7807	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	8.3	A
On-Resistance (Rds On) @ 7A, 4.5V	25	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V
Gate Charge (Qg) @ 5V	17	nC
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	—
Mounting Type	Surface Mount	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitute parts for the IRF7807 are selected based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Voltage Rating: All substitute parts maintain the 30V Vdss specification, ensuring compatibility with the same circuit voltage domains.

Current Handling: Substitute parts are rated between 6.5A and 10A continuous drain current, providing functional equivalence for applications requiring 8.3A operation. Parts rated at or above the original specification ensure no derating is required.

On-Resistance: Rds On values range from 21mOhm to 26mOhm, maintaining similar conduction losses and thermal characteristics within acceptable engineering tolerances.

Package Compatibility: All substitute parts use 8-SOIC (0.154", 3.90mm Width) surface mount packaging, ensuring direct PCB layout compatibility without redesign.

Gate Charge: Gate charge values between 4.6nC and 23.1nC indicate varying switching speeds; lower values enable faster switching while higher values remain within acceptable driver capability ranges.

Temperature Range: Operating temperature ranges from -55°C to 150°C across all parts, maintaining thermal performance specifications.

Compliance Status: Substitute parts include both active and not-for-new-designs status options, with RoHS3 compliance available for environmentally regulated applications.

Parameter Comparison

Parameter	IRF7807	RSS065N03TB	STS10N3LH5	ZXMN3B04N8TA	Unit
Manufacturer	Infineon	Rohm	STMicroelectronics	Diodes Inc.	—
Vdss	30	30	30	30	V
Id @ 25°C	8.3	6.5	10	7.2	A
Rds On (Max)	25 @ 7A, 4.5V	26 @ 6.5A, 10V	21 @ 5A, 10V	25 @ 7.2A, 4.5V	mOhm
Vgs(th) (Max)	1 @ 250µA	2.5 @ 1mA	1 @ 250µA	0.7 @ 250µA	V
Qg (Max)	17 @ 5V	6.1 @ 5V	4.6 @ 5V	23.1 @ 4.5V	nC
Power Dissipation (Max)	2.5	2	2.5	2	W
Operating Temp Range	-55 to 150	to 150	-55 to 150	-55 to 150	°C
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	—
Product Status	Obsolete	Active	Not For New Designs	Active	—
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

For Active Production with RoHS3 Compliance:

The ZXMN3B04N8TA (Diodes Incorporated) and RSS065N03TB (Rohm Semiconductor) are both active products with full RoHS3 compliance. The ZXMN3B04N8TA provides the closest electrical match to the IRF7807, with 7.2A continuous drain current and 25mOhm on-resistance at 4.5V gate drive, matching the original drive voltage specification. The RSS065N03TB offers lower gate charge (6.1nC) for faster switching applications but requires 10V gate drive for optimal on-resistance performance.

For Designs Accepting Not-For-New-Designs Status:

The STS10N3LH5 (STMicroelectronics) provides the highest current rating at 10A and the lowest on-resistance at 21mOhm, offering superior performance headroom. This part is classified as not-for-new-designs but remains available with RoHS3 compliance and full temperature range support (-55°C to 150°C).

Compliance Considerations:

All three substitute parts are RoHS3 compliant, addressing environmental regulatory requirements that the obsolete IRF7807 does not meet. Selection should prioritize active product status for long-term supply chain stability unless design constraints mandate the performance characteristics of not-for-new-designs alternatives.

Frequently Asked Questions (FAQ)

Q: Can the RSS065N03TB replace the IRF7807 in all applications?

A: The RSS065N03TB is electrically compatible based on voltage and package specifications. However, its 6.5A current rating is lower than the IRF7807's 8.3A specification. Applications requiring the full 8.3A continuous current must use the STS10N3LH5 (10A) or ZXMN3B04N8TA (7.2A). The RSS065N03TB requires 10V gate drive for optimal on-resistance, whereas the IRF7807 operates at 4.5V; verify gate driver capability before selection.

Q: What is the difference between the ZXMN3B04N8TA and STS10N3LH5?

A: Both parts are 30V N-Channel MOSFETs in 8-SOIC packages. The ZXMN3B04N8TA is active with 7.2A rating and 25mOhm on-resistance at 4.5V drive. The STS10N3LH5 is not-for-new-designs with 10A rating and 21mOhm on-resistance at 10V drive. The STS10N3LH5 offers higher current capacity and lower on-resistance but is not recommended for new designs. The ZXMN3B04N8TA provides better long-term availability and active product support.

Q: Are all substitute parts pin-compatible with the IRF7807?

A: All substitute parts use the 8-SOIC (0.154", 3.90mm Width) package. Pin compatibility must be verified against the specific PCB layout and gate driver connections. Standard 8-SOIC pinouts are consistent across manufacturers, but always confirm pinout diagrams before assembly.

Q: Which substitute part has the lowest gate charge?

A: The STS10N3LH5 has the lowest gate charge at 4.6nC @ 5V, enabling the fastest switching speed. The RSS065N03TB follows at 6.1nC @ 5V. The ZXMN3B04N8TA has the highest gate charge at 23.1nC @ 4.5V. Lower gate charge reduces driver power dissipation and enables higher switching frequencies.

Q: What is the impact of different Vgs(th) specifications?

A: The IRF7807 and STS10N3LH5 both have 1V Vgs(th) @ 250µA, ensuring consistent gate threshold behavior. The ZXMN3B04N8TA has a lower threshold at 0.7V, enabling faster turn-on. The RSS065N03TB has a higher threshold at 2.5V @ 1mA, requiring higher gate drive voltage for reliable switching. Verify gate driver output voltage compatibility with the selected part's threshold specification.

Q: Are there inventory considerations for substitute selection?

A: Current inventory levels are: ZXMN3B04N8TA (6,871 pcs), RSS065N03TB (10,100 pcs), and STS10N3LH5 (15,265 pcs). The STS10N3LH5 has the highest available stock. For long-term production, prioritize active products (ZXMN3B04N8TA and RSS065N03TB) to ensure sustained supply chain support beyond current inventory levels.

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