IRF7805ATR N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7805ATR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 13A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The IRF7805ATR is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, gate charge characteristics, and thermal performance while accommodating modern active product availability.

Substiute Parts

IRF7805ATR

Infineon TechnologiesIn Stock: 4205IRF7805ATR Datasheet

Current PartRFQ

FDS8880

onsemiIn Stock: 38174FDS8880 Datasheet

MFR RecommendedRFQ

RJK0355DSP-00#J0

Renesas Electronics CorporationIn Stock: 291653RJK0355DSP-00#J0 Datasheet

MFR RecommendedRFQ

RJK0355DSP-01#J0

Renesas Electronics CorporationIn Stock: 871RJK0355DSP-01#J0 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution validity for the IRF7805ATR is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal 30V
• Continuous Drain Current (Id): Must be ≥13A at 25°C
• On-State Resistance (Rds On): Must not exceed 11mOhm at rated conditions
• Gate Charge (Qg): Must not exceed 31nC at specified gate voltage
• Power Dissipation: Must support ≥2.5W thermal rating
• Operating Temperature: Must span -55°C to 150°C minimum
• Package: Must be 8-SOIC surface mount configuration
• FET Type: N-Channel MOSFET technology only

Secondary Compatibility Parameters:

• Gate Threshold Voltage (Vgs(th)): Acceptable range 2.5V to 3V
• Maximum Gate Voltage (Vgs): Must support ±12V minimum
• Moisture Sensitivity Level (MSL): Must be MSL 1 (Unlimited)
• RoHS Compliance: Active substitutes must be ROHS3 compliant

All identified substitute parts meet or exceed these criteria within the specified electrical and mechanical boundaries.

Parameter Comparison

Engineering Selection Recommendations

FDS8880 (onsemi): The FDS8880 is an active product with ROHS3 compliance and PowerTrench® technology. It meets all primary substitution criteria with 11.6A continuous drain current, 10mOhm on-state resistance at 10V gate drive, and 2.5W power dissipation matching the IRF7805ATR thermal rating. Gate charge of 30nC at 10V is within acceptable limits. This part is recommended for applications requiring direct electrical equivalence with modern compliance standards. Inventory availability is 38,100 units.

RJK0355DSP-00#J0 and RJK0355DSP-01#J0 (Renesas Electronics): Both Renesas variants are active products with ROHS3 compliance. They provide 12A continuous drain current and 11.1mOhm on-state resistance at 10V gate drive, meeting core electrical requirements. Gate charge is significantly lower at 6nC at 4.5V, indicating faster switching characteristics. Power dissipation is rated at 1.8W, which is lower than the IRF7805ATR specification. These parts are suitable for applications where reduced gate charge and lower thermal dissipation are beneficial. RJK0355DSP-00#J0 has 291,630 units in stock; RJK0355DSP-01#J0 has 829 units available.

Selection Basis: All three substitute parts maintain the 30V Vdss rating, support continuous drain currents within 89% to 100% of the original specification, and are packaged in identical 8-SOIC surface mount configuration. Selection should prioritize active product status and ROHS3 compliance for new designs. The FDS8880 provides the closest electrical match to the IRF7805ATR with equivalent power dissipation. The Renesas options offer improved gate charge characteristics for switching-speed-sensitive applications.

Frequently Asked Questions (FAQ)

Q: Can the FDS8880 directly replace the IRF7805ATR in existing designs?

A: Yes. The FDS8880 maintains electrical equivalence across all critical parameters: 30V Vdss, 11.6A continuous drain current (87% of original), 10mOhm Rds On, and 2.5W power dissipation. Both devices use 8-SOIC packaging with identical pinout and thermal characteristics. The primary difference is product status (active vs. obsolete) and RoHS compliance (ROHS3 vs. non-compliant).

Q: What is the difference between the two Renesas RJK0355 variants?

A: RJK0355DSP-00#J0 and RJK0355DSP-01#J0 are electrically identical with the same electrical specifications: 30V Vdss, 12A continuous drain current, 11.1mOhm Rds On, and 1.8W power dissipation. The suffix designations (-00#J0 vs. -01#J0) indicate different manufacturing batches or packaging configurations. Both are active products with ROHS3 compliance and 8-SOIC packaging.

Q: Why do the Renesas parts have lower gate charge than the IRF7805ATR?

A: Gate charge (Qg) is measured at different gate voltage conditions. The IRF7805ATR specifies 31nC at 5V, while Renesas parts specify 6nC at 4.5V. Lower gate charge indicates faster switching response and reduced driver power requirements. This is a design advantage in high-frequency switching applications but does not affect DC operating characteristics or thermal performance.

Q: Are all substitute parts RoHS compliant?

A: The IRF7805ATR is RoHS non-compliant (obsolete product). All three substitute parts—FDS8880, RJK0355DSP-00#J0, and RJK0355DSP-01#J0—are ROHS3 compliant, meeting current environmental and regulatory standards for new designs and procurement.

Q: Can I use a substitute part with lower power dissipation rating?

A: The Renesas parts are rated at 1.8W power dissipation compared to the IRF7805ATR's 2.5W. Substitution is valid if your application's actual power dissipation does not exceed 1.8W. Verify thermal calculations based on your specific operating conditions (current, duty cycle, ambient temperature, and PCB thermal design) before selecting a lower-rated device.

Q: What is the package compatibility between these parts?

A: All four parts use 8-SOIC (0.154", 3.90mm width) surface mount packaging with identical pinout and footprint. PCB layout modifications are not required for substitution. Verify solder reflow profiles and thermal management design remain adequate for the selected substitute part.

Q: Which substitute part should I choose for a new design?

A: For new designs, the FDS8880 is recommended as the primary choice due to equivalent power dissipation (2.5W), higher continuous drain current (11.6A), and extensive inventory availability (38,100 units). The Renesas RJK0355 variants are suitable alternatives if lower gate charge or reduced power dissipation aligns with your circuit requirements.