IRF7805A N-Channel MOSFET 30V 13A Equivalent & Substitute Parts

Part Overview

The IRF7805A is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 13A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The IRF7805A is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and component procurement.

Substitute parts must maintain compatibility across critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, gate threshold voltage, and thermal performance. All substitute candidates must be surface mount devices in 8-SOIC packaging to ensure mechanical and electrical compatibility with existing PCB layouts.

Substiute Parts

IRF7805A

Infineon TechnologiesIn Stock: 682IRF7805A Datasheet

Current PartRFQ

FDS8880

onsemiIn Stock: 38174FDS8880 Datasheet

MFR RecommendedRFQ

SI4894BDY-T1-GE3

Vishay SiliconixIn Stock: 25100SI4894BDY-T1-GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7805A is determined by strict adherence to the following electrical and mechanical criteria:

Mandatory Matching Parameters:

• Drain-to-Source Voltage (Vdss): Must equal 30V
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Mounting Type: Must be Surface Mount
• Package: Must be 8-SOIC with 0.154" (3.90mm) width

Compatible Parameter Ranges:

• Continuous Drain Current (Id): Substitute must meet or exceed 13A at 25°C
• On-Resistance (Rds On): Substitute must not exceed 11 mOhm at rated conditions
• Gate Threshold Voltage (Vgs(th)): Must be ≤3V at 250µA
• Gate Charge (Qg): Must be ≤31 nC at specified Vgs
• Power Dissipation: Must support minimum 2.5W at Ta
• Operating Temperature: Must span -55°C to 150°C (TJ)

The two identified substitute parts, FDS8880 and SI4894BDY-T1-GE3, satisfy all mandatory matching parameters and operate within compatible electrical ranges. Both devices are active products with current manufacturing status and improved compliance certifications compared to the obsolete IRF7805A.

Parameter Comparison

Engineering Selection Recommendations

FDS8880 (onsemi PowerTrench®)

The FDS8880 is the primary recommended substitute for the IRF7805A. This device is manufactured by onsemi and maintains active product status with ROHS3 compliance certification. The FDS8880 delivers 11.6A continuous drain current, which approaches the original 13A specification. On-resistance is improved at 10 mOhm compared to the IRF7805A's 11 mOhm, and gate charge is reduced to 30 nC, supporting faster switching performance. The maximum gate voltage rating of ±20V provides enhanced gate drive flexibility compared to the ±12V limit of the IRF7805A. Power dissipation capability matches the original at 2.5W. Current inventory availability is substantial at 38,100 pieces.

SI4894BDY-T1-GE3 (Vishay Siliconix TrenchFET®)

The SI4894BDY-T1-GE3 is an alternative substitute manufactured by Vishay Siliconix with active product status and ROHS3 compliance. This device delivers 8.9A continuous drain current, which is lower than both the original IRF7805A and the FDS8880. On-resistance is maintained at 11 mOhm, matching the IRF7805A specification. Gate charge is higher at 38 nC, indicating slower switching characteristics. Power dissipation is reduced to 1.4W, which may limit thermal performance in high-power applications. The SI4894BDY-T1-GE3 is suitable for applications where drain current requirements do not exceed 8.9A and thermal dissipation is not critical. Current inventory availability is 25,079 pieces.

Selection Criteria:

For applications requiring the full 13A drain current capability of the original IRF7805A, the FDS8880 is the appropriate choice. For applications with reduced current requirements below 9A, the SI4894BDY-T1-GE3 provides an alternative. Both substitutes offer improved compliance certifications and active manufacturing status, eliminating obsolescence risk associated with the IRF7805A.

Frequently Asked Questions (FAQ)

Q: Can the FDS8880 directly replace the IRF7805A in existing designs?

A: The FDS8880 is mechanically and electrically compatible with the IRF7805A. Both devices are packaged in 8-SOIC with identical pin assignments and footprints. The FDS8880 meets or exceeds all critical electrical parameters including Vdss, Rds On, and Vgs(th). No PCB layout modifications are required for substitution.

Q: What is the primary difference between the FDS8880 and SI4894BDY-T1-GE3?

A: The FDS8880 delivers 11.6A continuous drain current with 2.5W power dissipation, closely matching the IRF7805A's 13A and 2.5W ratings. The SI4894BDY-T1-GE3 delivers only 8.9A with reduced 1.4W power dissipation. The FDS8880 is preferred for high-current applications; the SI4894BDY-T1-GE3 is suitable for lower-current designs.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both the FDS8880 and SI4894BDY-T1-GE3 are ROHS3 compliant. The original IRF7805A is RoHS non-compliant. Substitution with either part improves regulatory compliance for new designs and manufacturing.

Q: What is the impact of gate charge differences on circuit performance?

A: The IRF7805A has 31 nC gate charge at 5V. The FDS8880 has 30 nC at 10V, and the SI4894BDY-T1-GE3 has 38 nC at 10V. Lower gate charge enables faster switching transitions and reduced gate drive power consumption. The FDS8880's lower gate charge provides improved switching performance compared to both the original and the SI4894BDY-T1-GE3.

Q: Can the SI4894BDY-T1-GE3 be used in applications designed for 13A operation?

A: No. The SI4894BDY-T1-GE3 is rated for maximum 8.9A continuous drain current. Using this device in applications requiring 13A operation will result in device overstress, thermal runaway, and potential failure. The FDS8880 is the appropriate choice for 13A applications.

Q: What is the significance of the ±20V gate voltage rating on the substitute parts?

A: Both substitute parts support ±20V maximum gate voltage compared to the IRF7805A's ±12V limit. This provides greater flexibility in gate drive circuit design and improved noise immunity. Existing gate drive circuits designed for ±12V operation remain fully compatible with the substitutes.

Q: Are there any thermal performance considerations when substituting these parts?

A: The FDS8880 maintains the original 2.5W power dissipation rating, ensuring equivalent thermal performance. The SI4894BDY-T1-GE3 has reduced 1.4W dissipation, which may improve thermal performance in thermally constrained applications but limits use in high-power designs. Thermal analysis should be performed based on actual application current levels.

Q: What packaging options are available for the substitute parts?

A: The FDS8880 is available in Cut Tape (CT) and Digi-Reel® packaging. The SI4894BDY-T1-GE3 is available in Tape & Reel (TR) packaging. Both are surface mount 8-SOIC devices with identical footprints. Packaging selection depends on procurement and assembly requirements.