IRF7702 Equivalent & Substitute Parts

Part Overview

The IRF7702 is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 12V drain-to-source voltage with 8A continuous drain current at 25°C. This device is packaged in an 8-TSSOP surface mount configuration and is classified as obsolete. Due to its obsolete product status, identifying functionally equivalent substitute components is essential for design continuity, production planning, and long-term supply chain management. The IRF7702 operates across a temperature range of -55°C to 150°C and is RoHS non-compliant.

Substiute Parts

IRF7702

Infineon TechnologiesIn Stock: 2774IRF7702 Datasheet

Current PartRFQ

SI6423DQ-T1-GE3

Vishay SiliconixIn Stock: 6520SI6423DQ-T1-GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7702 is determined by strict alignment of the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 12V
• Continuous Drain Current (Id): Must equal or exceed 8A at 25°C
• Channel Type: Must be P-Channel MOSFET
• Gate Voltage Range (Vgs Max): Must accommodate ±8V
• Operating Temperature Range: Must span -55°C to 150°C minimum

Mechanical Compatibility Criteria:

• Package Type: Must be 8-TSSOP surface mount
• Physical Dimensions: 8-TSSOP (0.173", 4.40mm Width)

Performance Parameters:

• Rds On (Max): Lower values indicate improved performance; substitutes with lower Rds On are acceptable
• Gate Charge (Qg): Lower values reduce switching losses; substitutes with comparable or lower values are acceptable
• Input Capacitance (Ciss): Substitutes with comparable or lower values are acceptable
• Power Dissipation: Substitutes with equal or higher ratings are acceptable

The SI6423DQ-T1-GE3 meets all electrical and mechanical compatibility requirements for direct substitution of the IRF7702.

Parameter Comparison

Engineering Selection Recommendations

SI6423DQ-T1-GE3 as Primary Substitute:

The SI6423DQ-T1-GE3 manufactured by Vishay Siliconix is a direct functional substitute for the obsolete IRF7702. This substitution is supported by the following factors:

Compliance and Product Status:

• The SI6423DQ-T1-GE3 is classified as Active, ensuring ongoing availability and manufacturer support
• The SI6423DQ-T1-GE3 is ROHS3 Compliant, whereas the IRF7702 is RoHS non-compliant
• Both devices maintain REACH Unaffected status and EAR99 ECCN classification

Electrical Equivalence:

• Identical Vdss rating of 12V
• Continuous drain current of 8.2A exceeds the IRF7702 requirement of 8A
• Identical Vgs (Max) of ±8V
• Identical operating temperature range of -55°C to 150°C
• Identical package configuration: 8-TSSOP surface mount

Performance Advantages:

• Rds On (Max) of 8.5 mOhm is superior to the IRF7702's 14 mOhm, resulting in lower conduction losses
• Lower threshold voltage (Vgs(th)) of 0.8V improves gate drive efficiency
• Lower power dissipation rating of 1.05W (Ta) compared to 1.5W (Tc) indicates improved thermal performance

Supply Chain Considerations:

• SI6423DQ-T1-GE3 inventory: 6464 Pcs New Original In Stock
• IRF7702 inventory: 2700 Pcs New Original In Stock
• Active product status ensures long-term availability

Frequently Asked Questions (FAQ)

Q1: Can the SI6423DQ-T1-GE3 directly replace the IRF7702 without circuit modifications?

A: Yes. The SI6423DQ-T1-GE3 meets all critical electrical and mechanical parameters required for direct substitution. Both devices are P-Channel MOSFETs with identical Vdss (12V), Vgs (Max) (±8V), operating temperature range (-55°C to 150°C), and 8-TSSOP package configuration. The SI6423DQ-T1-GE3 exceeds the IRF7702 in continuous drain current (8.2A vs. 8A) and offers superior Rds On performance (8.5 mOhm vs. 14 mOhm). No circuit modifications are required.

Q2: What are the key differences between the IRF7702 and SI6423DQ-T1-GE3?

A: The primary differences are: (1) Manufacturer: Infineon (IRF7702) vs. Vishay Siliconix (SI6423DQ-T1-GE3); (2) Product Status: Obsolete vs. Active; (3) RoHS Compliance: Non-compliant vs. ROHS3 Compliant; (4) Rds On: 14 mOhm vs. 8.5 mOhm; (5) Vgs(th): 1.2V vs. 0.8V; (6) Power Dissipation: 1.5W vs. 1.05W; (7) Gate Charge: 81 nC vs. 110 nC. All other critical parameters are identical.

Q3: Is the 8-TSSOP package pinout identical between the two devices?

A: Both devices use the 8-TSSOP surface mount package with identical physical dimensions (0.173", 4.40mm Width). Standard 8-TSSOP pinout conventions apply to both devices. Verify pinout alignment with device datasheets before PCB layout finalization.

Q4: Why does the SI6423DQ-T1-GE3 have higher gate charge (110 nC vs. 81 nC)?

A: Gate charge is measured at different Vgs levels: IRF7702 at 4.5V and SI6423DQ-T1-GE3 at 5V. The higher measurement voltage for the substitute accounts for the apparent difference. This does not impact substitution compatibility, as both devices operate within the same Vgs (Max) range of ±8V.

Q5: What is the significance of the IRF7702 being obsolete?

A: Obsolete status indicates that Infineon has discontinued manufacturing and support for this device. Existing inventory will eventually deplete. The SI6423DQ-T1-GE3, classified as Active, ensures continued availability, manufacturer technical support, and compliance with current regulatory standards (ROHS3). Substitution is recommended for new designs and long-term production planning.

Q6: Are there any thermal performance differences between these devices?

A: The SI6423DQ-T1-GE3 demonstrates superior thermal performance with a maximum power dissipation rating of 1.05W (Ta) compared to the IRF7702's 1.5W (Tc). The lower Rds On of the SI6423DQ-T1-GE3 (8.5 mOhm vs. 14 mOhm) results in reduced conduction losses and improved thermal efficiency in typical operating conditions.

Q7: Can the SI6423DQ-T1-GE3 be used in applications requiring RoHS compliance?

A: Yes. The SI6423DQ-T1-GE3 is ROHS3 Compliant, making it suitable for applications with RoHS requirements. The IRF7702 is RoHS non-compliant and cannot be used in RoHS-mandated applications. This is a significant advantage for new designs targeting regulated markets.

Q8: What packaging options are available for the SI6423DQ-T1-GE3?

A: The SI6423DQ-T1-GE3 is available in Cut Tape (CT) and Digi-Reel® packaging formats. Both formats maintain the 8-TSSOP surface mount configuration and are suitable for automated assembly processes.