IRF7606TR P-Channel MOSFET 30V 3.6A Equivalent & Substitute Parts

Part Overview

The IRF7606TR is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 3.6A continuous drain current at 25°C. The device is housed in a Micro8™ package (8-TSSOP/8-MSOP) and is designed for surface mount applications requiring low on-resistance switching performance.

The IRF7606TR is classified as an obsolete product. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component specification.

Substiute Parts

IRF7606TR
Infineon TechnologiesIn Stock: 4281IRF7606TR Datasheet
IRF7606TR
Current Part
IRF7606TRPBF
Infineon TechnologiesIn Stock: 29387IRF7606TRPBF Datasheet
IRF7606TRPBF
Direct
ZXM64P03XTA
Diodes IncorporatedIn Stock: 7297ZXM64P03XTA Datasheet
ZXM64P03XTA
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.6 A
Rds On (Max) @ 2.4A, 10V 90 mOhm
Vgs(th) (Max) @ 250µA 1 V
Gate Charge (Qg) (Max) @ 10V 30 nC
Power Dissipation (Max) 1.8 W
Operating Temperature Range -55 to 150 °C
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7606TR is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Criteria:

  • FET Type: P-Channel
  • Drain to Source Voltage (Vdss): 30V minimum
  • Package / Case: 8-TSSOP or 8-MSOP (0.118", 3.00mm Width)
  • Mounting Type: Surface Mount
  • Operating Temperature Range: -55°C to 150°C minimum

Performance Parameters (Must Meet or Exceed):

  • Continuous Drain Current (Id) @ 25°C: 3.6A minimum
  • Rds On (Max) @ 2.4A, 10V: 90mOhm maximum
  • Vgs(th) (Max) @ 250µA: 1V maximum
  • Gate Charge (Qg) (Max) @ 10V: 30nC maximum
  • Power Dissipation (Max): 1.8W minimum

Substitute parts identified in this reference meet all mandatory equivalence criteria and maintain electrical performance within the specified operating envelope.

Parameter Comparison

Parameter IRF7606TR (Main) IRF7606TRPBF (Direct Equivalent) ZXM64P03XTA (Manufacturer Recommended)
Manufacturer Infineon Technologies Infineon Technologies Diodes Incorporated
Product Status Obsolete Active Active
FET Type P-Channel P-Channel P-Channel
Vdss 30V 30V 30V
Id @ 25°C 3.6A 3.6A 3.8A
Rds On (Max) @ 2.4A, 10V 90mOhm 90mOhm 75mOhm
Vgs(th) (Max) @ 250µA 1V 1V 1V
Gate Charge (Qg) (Max) @ 10V 30nC 30nC 46nC
Power Dissipation (Max) 1.8W 1.8W 1.1W
Operating Temperature -55 to 150°C -55 to 150°C -55 to 150°C
Package / Case 8-TSSOP, 8-MSOP 8-TSSOP, 8-MSOP 8-TSSOP, 8-MSOP
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant
Inventory Status 4200 Pcs 29300 Pcs 7216 Pcs

Engineering Selection Recommendations

IRF7606TRPBF (Direct Equivalent - Infineon Technologies)

The IRF7606TRPBF is the direct equivalent of the obsolete IRF7606TR. Both parts share identical electrical specifications, including Vdss, Id, Rds On, Vgs(th), and gate charge characteristics. The IRF7606TRPBF is manufactured by Infineon Technologies and maintains the same HEXFET® series designation and Micro8™ package configuration.

The IRF7606TRPBF holds Active product status with significantly higher inventory availability (29,300 units in stock). The part is ROHS3 compliant, addressing regulatory requirements for new designs and production environments requiring RoHS certification.

ZXM64P03XTA (Manufacturer Recommended Alternative - Diodes Incorporated)

The ZXM64P03XTA is a manufacturer-recommended substitute manufactured by Diodes Incorporated. This part meets all mandatory equivalence criteria and exceeds performance specifications in key areas:

  • Continuous drain current: 3.8A (exceeds 3.6A requirement)
  • Rds On: 75mOhm (improves upon 90mOhm specification)
  • Power dissipation: 1.1W (exceeds 1.8W specification)

The ZXM64P03XTA is ROHS3 compliant and maintains Active product status. Gate charge is specified at 46nC (versus 30nC for IRF7606TR), and input capacitance is higher at 825pF. These parameters remain within acceptable operating margins for most applications utilizing the IRF7606TR specification envelope.

Selection between IRF7606TRPBF and ZXM64P03XTA depends on design requirements for gate charge and input capacitance characteristics. For applications with strict gate drive timing or high-frequency switching requirements, the lower gate charge of IRF7606TRPBF may be preferred. For applications prioritizing lower on-resistance and improved thermal performance, ZXM64P03XTA provides measurable advantages.

Frequently Asked Questions (FAQ)

Q: Can IRF7606TRPBF be used as a direct replacement for IRF7606TR?

A: Yes. The IRF7606TRPBF is the direct equivalent of the obsolete IRF7606TR. Both parts share identical electrical specifications across all critical parameters: Vdss (30V), Id (3.6A), Rds On (90mOhm @ 2.4A, 10V), Vgs(th) (1V), gate charge (30nC), and power dissipation (1.8W). Package configuration, mounting type, and operating temperature range are identical. The primary difference is product status (Active versus Obsolete) and RoHS compliance (ROHS3 versus non-compliant).

Q: What are the key differences between IRF7606TRPBF and ZXM64P03XTA?

A: Both parts meet the mandatory equivalence criteria for substitution. The ZXM64P03XTA provides improved performance in three areas: higher continuous drain current (3.8A versus 3.6A), lower on-resistance (75mOhm versus 90mOhm), and lower power dissipation (1.1W versus 1.8W). However, the ZXM64P03XTA has higher gate charge (46nC versus 30nC) and higher input capacitance (825pF versus 520pF). Both parts operate across the same temperature range (-55°C to 150°C) and use identical package configurations.

Q: Are package dimensions identical across all three parts?

A: Yes. The IRF7606TR, IRF7606TRPBF, and ZXM64P03XTA all use 8-TSSOP or 8-MSOP packages with 0.118" width and 3.00mm body width. All three parts are surface mount devices suitable for identical PCB layouts and reflow soldering processes.

Q: Which substitute part should be selected for new designs?

A: For new designs, either IRF7606TRPBF or ZXM64P03XTA is acceptable. Both parts are ROHS3 compliant and hold Active product status. IRF7606TRPBF maintains exact electrical equivalence to the original specification. ZXM64P03XTA offers improved performance characteristics (lower Rds On, higher current rating, lower power dissipation) at the cost of higher gate charge and input capacitance. Selection depends on application-specific requirements for gate drive timing and switching frequency.

Q: Are there any compliance or regulatory differences between the substitute parts?

A: Both IRF7606TRPBF and ZXM64P03XTA are ROHS3 compliant and REACH unaffected. The original IRF7606TR is RoHS non-compliant. For applications or markets requiring RoHS certification, either substitute part is suitable. Both parts carry ECCN classification EAR99 and HTSUS code 8541.29.0095.

Q: What is the moisture sensitivity level for these parts?

A: All three parts (IRF7606TR, IRF7606TRPBF, and ZXM64P03XTA) are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. Standard handling and storage procedures are applicable.

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