IRF7604TRPBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7604TRPBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 20V drain-to-source voltage with 3.6A continuous drain current at 25°C. This device is part of the HEXFET® series and features a Micro8™ surface mount package. The IRF7604TRPBF is classified as obsolete, making identification of functionally equivalent substitute components essential for ongoing design support, production continuity, and system maintenance.

Substiute Parts

IRF7604TRPBF
Infineon TechnologiesIn Stock: 8384IRF7604TRPBF Datasheet
IRF7604TRPBF
Current Part
ZXM64P02XTA
Diodes IncorporatedIn Stock: 7303ZXM64P02XTA Datasheet
ZXM64P02XTA
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.6 A
Rds On (Max) @ Id, Vgs 90 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 700 mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5V
Power Dissipation (Max) 1.8 W
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRF7604TRPBF is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Equivalence Criteria:

  • FET Type: P-Channel topology
  • Drain to Source Voltage (Vdss): 20V minimum rating
  • Continuous Drain Current (Id): 3.5A or greater at 25°C
  • On-State Resistance (Rds On): 90 mOhm maximum at specified gate voltage
  • Gate Threshold Voltage (Vgs(th)): 700 mV maximum
  • Gate Charge (Qg): Acceptable within application switching frequency constraints
  • Power Dissipation: Thermal performance suitable for application requirements
  • Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Equivalence Criteria:

  • Package Type: 8-TSSOP or 8-MSOP surface mount
  • Package Dimensions: 0.118" width, 3.00mm standard
  • Mounting: Surface mount compatibility with existing PCB layouts

The ZXM64P02XTA from Diodes Incorporated meets all specified electrical and mechanical parameters and is classified as an active product with current manufacturing support.

Parameter Comparison

Parameter IRF7604TRPBF (Infineon) ZXM64P02XTA (Diodes) Match Status
FET Type P-Channel P-Channel Equivalent
Drain to Source Voltage (Vdss) 20 V 20 V Equivalent
Current - Continuous Drain (Id) @ 25°C 3.6 A 3.5 A Equivalent
Rds On (Max) @ Id, Vgs 90 mOhm @ 2.4A, 4.5V 90 mOhm @ 2.4A, 4.5V Equivalent
Vgs(th) (Max) @ Id 700 mV @ 250µA 700 mV @ 250µA Equivalent
Vgs (Max) ±12 V ±12 V Equivalent
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5V 6.9 nC @ 4.5V Substitute Superior
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 15V 900 pF @ 15V Substitute Higher
Power Dissipation (Max) 1.8 W 1.1 W Substitute Superior
Operating Temperature Range -55 to 150 °C (TJ) -55 to 150 °C (TJ) Equivalent
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Equivalent
Mounting Type Surface Mount Surface Mount Equivalent
Product Status Obsolete Active Substitute Active

Engineering Selection Recommendations

ZXM64P02XTA Selection Basis:

The ZXM64P02XTA is the primary substitute for the obsolete IRF7604TRPBF based on the following engineering factors:

  1. Product Status: The ZXM64P02XTA is classified as Active with current manufacturing support from Diodes Incorporated, ensuring long-term availability and supply chain continuity compared to the obsolete IRF7604TRPBF.

  2. Electrical Equivalence: All critical electrical parameters match or exceed the IRF7604TRPBF specification. Continuous drain current (3.5A) is within 97% of the original (3.6A). On-state resistance, gate threshold voltage, and maximum gate voltage are identical.

  3. Thermal Performance: The ZXM64P02XTA demonstrates superior power dissipation characteristics (1.1W vs. 1.8W), indicating improved thermal efficiency in equivalent operating conditions.

  4. Gate Charge Advantage: The ZXM64P02XTA exhibits lower gate charge (6.9 nC vs. 20 nC), resulting in reduced switching losses and improved switching speed performance.

  5. Compliance and Certifications: The ZXM64P02XTA is RoHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements. Moisture Sensitivity Level is 1 (Unlimited) versus MSL 2 (1 Year) for the original part, providing superior handling and storage characteristics.

  6. Package Compatibility: Both devices utilize identical 8-TSSOP/8-MSOP surface mount packaging with 0.118" width and 3.00mm standard dimensions, enabling direct PCB layout compatibility without redesign.

Frequently Asked Questions (FAQ)

Q: Can the ZXM64P02XTA directly replace the IRF7604TRPBF in existing designs?

A: Yes. The ZXM64P02XTA is electrically and mechanically equivalent to the IRF7604TRPBF. Both devices share identical package dimensions (8-TSSOP/8-MSOP, 0.118" width, 3.00mm), identical on-state resistance (90 mOhm @ 2.4A, 4.5V), and identical gate threshold voltage (700 mV @ 250µA). The substitute part can be used as a direct replacement without circuit modifications.

Q: What are the key differences between these two parts?

A: The primary differences are: (1) Product Status—ZXM64P02XTA is Active while IRF7604TRPBF is Obsolete; (2) Gate Charge—ZXM64P02XTA has lower gate charge (6.9 nC vs. 20 nC), improving switching performance; (3) Power Dissipation—ZXM64P02XTA has lower maximum power dissipation (1.1W vs. 1.8W); (4) Continuous Drain Current—ZXM64P02XTA is rated 3.5A versus 3.6A; (5) Moisture Sensitivity—ZXM64P02XTA has MSL 1 (Unlimited) versus MSL 2 (1 Year).

Q: Are there any performance advantages to using the ZXM64P02XTA?

A: Yes. The ZXM64P02XTA offers lower gate charge, resulting in reduced switching losses and faster switching transitions. Lower power dissipation indicates improved thermal efficiency. These characteristics make the ZXM64P02XTA suitable for applications requiring optimized switching performance and thermal management.

Q: What is the significance of the continuous drain current difference (3.6A vs. 3.5A)?

A: The 0.1A difference represents approximately 3% lower current rating for the ZXM64P02XTA. For applications operating below 3.5A, this difference is not significant. For applications requiring the full 3.6A rating, design margin analysis is required to confirm the 3.5A rating is sufficient for the intended application.

Q: Are the packages truly identical?

A: Yes. Both the IRF7604TRPBF and ZXM64P02XTA use 8-TSSOP and 8-MSOP surface mount packages with identical dimensions (0.118" width, 3.00mm standard). Pin configurations and PCB footprints are compatible, enabling direct substitution without layout modifications.

Q: What compliance certifications apply to the ZXM64P02XTA?

A: The ZXM64P02XTA is RoHS3 Compliant and REACH Unaffected. Both parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. The substitute part meets current environmental and regulatory requirements for commercial and industrial applications.

Q: How does the input capacitance difference affect circuit design?

A: The ZXM64P02XTA has higher input capacitance (900 pF vs. 590 pF @ 15V). This affects gate drive circuit design, particularly in high-frequency switching applications. Higher input capacitance requires greater gate charge delivery capability. For most standard applications, this difference is manageable within typical gate driver specifications.

Q: What is the moisture sensitivity level difference, and why does it matter?

A: The IRF7604TRPBF has MSL 2 (1 Year), while the ZXM64P02XTA has MSL 1 (Unlimited). MSL 1 indicates superior moisture resistance and unlimited shelf life without special storage conditions. This provides advantages in supply chain management, inventory control, and reduces risk of moisture-induced failures during storage and handling.

Request Quote (Ships tomorrow)