IRF7601TRPBF Equivalent & Substitute Parts

Part Overview

The IRF7601TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 20V drain-to-source voltage with 5.7A continuous drain current at 25°C. This device is packaged in a Micro8™ surface mount configuration and is designed for applications requiring compact, high-performance switching solutions. The IRF7601TRPBF carries an Obsolete product status, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity.

Substiute Parts

IRF7601TRPBF

Infineon TechnologiesIn Stock: 16647IRF7601TRPBF Datasheet

Current PartRFQ

IRF7530TRPBF

Infineon TechnologiesIn Stock: 96906IRF7530TRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

The IRF7601TRPBF can be substituted with the IRF7530TRPBF based on the following electrical and mechanical compatibility criteria:

Voltage Rating Compatibility: Both devices share an identical 20V drain-to-source voltage (Vdss) rating, ensuring compatibility in circuits designed for this voltage class.

Current Rating Compatibility: The IRF7601TRPBF operates at 5.7A continuous drain current, while the IRF7530TRPBF operates at 5.4A. The substitute part maintains current capability within 94.7% of the original specification, suitable for applications not requiring the full 5.7A rating.

On-Resistance Characteristics: The IRF7601TRPBF exhibits 35 mOhm maximum on-resistance at 3.8A and 4.5V gate-source voltage. The IRF7530TRPBF provides 30 mOhm maximum on-resistance at 5.4A and 4.5V gate-source voltage, representing improved switching efficiency.

Package Compatibility: Both devices utilize the 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Micro8™ surface mount package, enabling direct board-level substitution without layout modifications.

Temperature Range: Both devices operate across the identical -55°C to 150°C junction temperature range, ensuring thermal compatibility in target applications.

Regulatory Compliance: Both parts maintain ROHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status, satisfying equivalent environmental and regulatory requirements.

Configuration Difference: The IRF7530TRPBF is configured as a dual N-Channel MOSFET array (2 N-Channel), whereas the IRF7601TRPBF is a single N-Channel device. Circuit integration requirements must account for this architectural difference.

Parameter Comparison

Engineering Selection Recommendations

Substitution Feasibility: The IRF7530TRPBF serves as a functional equivalent for the IRF7601TRPBF in applications where the dual N-Channel configuration can be accommodated within the circuit topology. Both devices maintain identical voltage ratings, compatible current specifications, and matching thermal operating ranges.

Product Status Consideration: The IRF7601TRPBF is classified as Obsolete, indicating discontinued manufacturing and limited availability. The IRF7530TRPBF carries a "Not For New Designs" status, indicating reduced support but continued availability. For new design initiatives, alternative parts with active product status should be evaluated; however, for legacy system support and maintenance applications, the IRF7530TRPBF provides continuity.

Regulatory and Compliance Alignment: Both devices satisfy ROHS3 compliance requirements and maintain equivalent environmental certifications (REACH Unaffected status). MSL Level 1 (Unlimited) moisture sensitivity on both parts ensures equivalent handling and storage requirements.

Electrical Performance Trade-offs: The IRF7530TRPBF exhibits lower on-resistance (30 mOhm versus 35 mOhm), resulting in reduced conduction losses. However, the substitute part demonstrates higher input capacitance (1310 pF versus 650 pF) and increased gate charge (26 nC versus 22 nC), which may impact switching speed and gate drive requirements in high-frequency applications.

Configuration Integration: Circuit designers must account for the dual N-Channel architecture of the IRF7530TRPBF. Applications utilizing only a single channel require appropriate handling of the unused channel to prevent unintended switching behavior.

Frequently Asked Questions (FAQ)

Q: Can the IRF7530TRPBF directly replace the IRF7601TRPBF on existing PCBs?

A: Yes, direct board-level substitution is possible. Both devices utilize identical 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Micro8™ surface mount packages with matching pinout compatibility. No PCB layout modifications are required for physical installation.

Q: What are the key electrical differences between these two parts?

A: The primary differences are: (1) Configuration—IRF7601TRPBF is single N-Channel; IRF7530TRPBF is dual N-Channel; (2) On-resistance—IRF7530TRPBF provides lower on-resistance (30 mOhm versus 35 mOhm); (3) Input capacitance—IRF7530TRPBF exhibits higher input capacitance (1310 pF versus 650 pF); (4) Gate charge—IRF7530TRPBF requires higher gate charge (26 nC versus 22 nC); (5) Continuous drain current—IRF7601TRPBF rated at 5.7A versus IRF7530TRPBF at 5.4A.

Q: Will the higher input capacitance of the IRF7530TRPBF affect circuit performance?

A: Higher input capacitance (1310 pF versus 650 pF) increases the capacitive load on the gate drive circuit. This may require gate drive current adjustment and can impact switching frequency response in high-speed applications. Circuit simulation or testing is necessary to confirm performance in specific applications.

Q: Are both parts suitable for new product designs?

A: The IRF7601TRPBF is Obsolete and unsuitable for new designs. The IRF7530TRPBF carries "Not For New Designs" status, indicating limited long-term support. For new product development, evaluation of active-status alternatives from the HEXFET® series is recommended.

Q: How does the dual N-Channel configuration of the IRF7530TRPBF affect circuit implementation?

A: The IRF7530TRPBF integrates two independent N-Channel MOSFETs within a single package. Applications requiring only one channel must ensure proper biasing of the unused channel to prevent parasitic switching. Unused channels can be tied to ground or configured as required by the specific application topology.

Q: Are the thermal characteristics equivalent between these devices?

A: Both devices operate across the identical -55°C to 150°C junction temperature range. However, the IRF7530TRPBF exhibits lower maximum power dissipation (1.3W versus 1.8W), which may impact thermal management in high-power applications. Thermal analysis specific to the target application is necessary.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the IRF7601TRPBF and IRF7530TRPBF are ROHS3 compliant, REACH Unaffected, and carry MSL Level 1 (Unlimited) moisture sensitivity ratings. Equivalent environmental and regulatory requirements are satisfied by both devices.