IRF7501TRPBF Equivalent & Substitute Parts

Part Overview

The IRF7501TRPBF is a dual N-channel MOSFET array manufactured by Infineon Technologies, designed for logic-level gate switching applications. This device integrates two N-channel MOSFETs in a compact Micro8™ surface mount package, operating at 20V drain-to-source voltage with 2.4A continuous drain current capability.

The IRF7501TRPBF is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IRF7501TRPBF
Infineon TechnologiesIn Stock: 10136IRF7501TRPBF Datasheet
IRF7501TRPBF
Current Part
IRF7503TRPBF
Infineon TechnologiesIn Stock: 15295IRF7503TRPBF Datasheet
IRF7503TRPBF
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.4 A
Rds On (Max) @ Id, Vgs 135 @ 1.7A, 4.5V mOhm
Vgs(th) (Max) @ Id 700 @ 250µA mV
Gate Charge (Qg) (Max) @ Vgs 8 @ 4.5V nC
Input Capacitance (Ciss) (Max) @ Vds 260 @ 15V pF
Power - Max 1.25 W
Operating Temperature Range -55 to 150 °C (TJ)
Configuration 2 N-Channel (Dual)
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type Surface Mount
Series HEXFET®
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate

Substitute Part Grouping Explanation

Substitution of the IRF7501TRPBF is determined by the following critical parameters:

Configuration Match: Both the main part and substitute must maintain dual N-channel MOSFET configuration to preserve circuit functionality and pinout compatibility.

Package Compatibility: The 8-TSSOP/8-MSOP Micro8™ package with 0.118" (3.00mm) width is mandatory for PCB layout compatibility and automated assembly processes.

Electrical Parameter Tolerance: Substitute parts must satisfy the following conditions:

  • Drain-to-source voltage (Vdss) must equal or exceed 20V
  • Continuous drain current (Id) must equal or exceed 2.4A at 25°C
  • On-resistance (Rds On) must not exceed the specified maximum values
  • Gate threshold voltage (Vgs(th)) must remain within acceptable switching margins
  • Gate charge (Qg) and input capacitance (Ciss) must support existing gate drive circuitry

Mounting and Environmental Requirements: Surface mount technology, operating temperature range of -55°C to 150°C (TJ), and compliance certifications (RoHS3, REACH) must be maintained.

The IRF7503TRPBF qualifies as a substitute because it maintains identical configuration, package, mounting type, and temperature range while providing higher voltage rating (30V vs. 20V) and equivalent current handling capability.

Parameter Comparison

Parameter IRF7501TRPBF IRF7503TRPBF Unit
Manufacturer Infineon Technologies Infineon Technologies
Series HEXFET® HEXFET®
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20 30 V
Current - Continuous Drain (Id) @ 25°C 2.4 2.4 A
Rds On (Max) @ Id, Vgs 135 @ 1.7A, 4.5V 135 @ 1.7A, 10V mOhm
Vgs(th) (Max) @ Id 700 @ 250µA 1000 @ 250µA mV
Gate Charge (Qg) (Max) @ Vgs 8 @ 4.5V 12 @ 10V nC
Input Capacitance (Ciss) (Max) @ Vds 260 @ 15V 210 @ 25V pF
Power - Max 1.25 1.25 W
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type Surface Mount Surface Mount
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

Primary Substitute: IRF7503TRPBF

The IRF7503TRPBF is the manufacturer-recommended substitute for the obsolete IRF7501TRPBF. This substitution is supported by the following engineering factors:

Product Status: The IRF7501TRPBF is classified as obsolete, while the IRF7503TRPBF maintains active product status with confirmed inventory availability (15,275 pcs in stock). This ensures long-term supply chain continuity and manufacturing support.

Electrical Compatibility: The IRF7503TRPBF provides a higher voltage rating (30V vs. 20V) while maintaining identical continuous drain current (2.4A), on-resistance characteristics (135 mOhm), and maximum power dissipation (1.25W). Applications designed for 20V operation will function reliably with the 30V-rated substitute, as the higher voltage rating provides additional design margin without compromising performance in lower-voltage circuits.

Package and Pinout Equivalence: Both devices utilize the identical 8-TSSOP/8-MSOP Micro8™ package with 0.118" (3.00mm) width. Pinout compatibility is maintained, enabling direct PCB substitution without layout modifications.

Compliance and Environmental Specifications: Both parts maintain RoHS3 compliance, REACH unaffected status, MSL Level 1 (unlimited moisture sensitivity), and identical operating temperature range (-55°C to 150°C TJ). These certifications ensure regulatory compliance and environmental suitability for equivalent applications.

Gate Drive Considerations: The IRF7503TRPBF exhibits slightly higher gate charge (12 nC @ 10V vs. 8 nC @ 4.5V) and gate threshold voltage (1V @ 250µA vs. 700 mV @ 250µA). Existing gate drive circuits designed for the IRF7501TRPBF will operate within acceptable parameters for the substitute, though gate drive timing may be marginally affected due to increased gate charge.

Frequently Asked Questions (FAQ)

Q: Can the IRF7503TRPBF directly replace the IRF7501TRPBF without PCB modifications?

A: Yes. Both devices share identical pinout and package dimensions (8-TSSOP/8-MSOP Micro8™, 0.118" width). Direct substitution on existing PCBs is supported without layout changes.

Q: What is the primary difference between these two parts?

A: The IRF7503TRPBF has a higher drain-to-source voltage rating (30V vs. 20V). All other electrical parameters, including continuous drain current (2.4A), on-resistance (135 mOhm), and power rating (1.25W), remain equivalent.

Q: Will the higher voltage rating of the IRF7503TRPBF affect circuit performance in 20V applications?

A: No. The higher voltage rating provides additional design margin and does not degrade performance in applications operating at or below 20V. The device will function identically to the original part in such circuits.

Q: Are there any gate drive circuit modifications required when substituting to the IRF7503TRPBF?

A: No modifications are required. The IRF7503TRPBF gate charge (12 nC @ 10V) is slightly higher than the IRF7501TRPBF (8 nC @ 4.5V), but existing gate drive circuits will accommodate this difference without performance degradation.

Q: What is the product status difference between these parts?

A: The IRF7501TRPBF is obsolete with limited remaining inventory (10,035 pcs). The IRF7503TRPBF is active with robust inventory availability (15,275 pcs), ensuring long-term supply chain support and manufacturing continuity.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the IRF7501TRPBF and IRF7503TRPBF are RoHS3 compliant with REACH unaffected status and MSL Level 1 (unlimited) moisture sensitivity rating.

Q: Can the IRF7503TRPBF be used in new designs?

A: Yes. The IRF7503TRPBF is the recommended part for new designs requiring dual N-channel MOSFET functionality in the Micro8™ package. Its active product status and higher voltage rating make it the preferred choice for both legacy replacement and new applications.

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