IRF7495TR N-Channel MOSFET 100V 7.3A Equivalent & Substitute Parts

Part Overview

The IRF7495TR is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications requiring 100V drain-to-source voltage capability with 7.3A continuous drain current. This device belongs to the HEXFET® series and is packaged in an 8-SO configuration.

The IRF7495TR is classified as obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	7.3	A
On-State Resistance (Rds On) @ 4.4A, 10V	22	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	51	nC
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	8-SOIC (0.154", 3.90mm Width)	—

Substitute Part Grouping Explanation

Substitute parts for the IRF7495TR are identified based on strict electrical and mechanical parameter alignment within the N-Channel MOSFET category. The substitution logic is based on the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): 7.3A or greater
On-State Resistance (Rds On): Comparable performance at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Within acceptable operating range
Power Dissipation: 2.5W or greater
Operating Temperature Range: -55°C to 150°C or broader

Mechanical Compatibility Criteria:

Mounting Type: Surface Mount
Package Type: 8-SOIC configuration with 0.154" (3.90mm) width

Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications) and manufacturer-recommended alternatives (functionally compatible with minor parameter variations).

Parameter Comparison

Parameter	IRF7495TR	IRF7495TRPBF	FDS3672
Manufacturer	Infineon Technologies	Infineon Technologies	onsemi
Product Status	Obsolete	Active	Active
FET Type	N-Channel	N-Channel	N-Channel
Vdss	100V	100V	100V
Id @ 25°C	7.3A	7.3A	7.5A
Rds On (Max) @ 10V	22 mOhm @ 4.4A	22 mOhm @ 4.4A	23 mOhm @ 7.5A
Vgs(th) @ 250µA	4V	4V	4V
Gate Charge (Qg) @ 10V	51 nC	51 nC	37 nC
Power Dissipation (Max)	2.5W	2.5W	2.5W
Operating Temperature	-55 to 150°C	-55 to 150°C	-55 to 150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package	8-SOIC	8-SOIC	8-SOIC
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF7495TRPBF (Infineon Technologies)

The IRF7495TRPBF is a parametric equivalent to the IRF7495TR with identical electrical specifications. This part is classified as Active product status, ensuring ongoing availability and supply chain support. The IRF7495TRPBF is ROHS3 compliant and carries REACH Unaffected certification, meeting modern regulatory requirements. This substitute is recommended as the primary replacement for obsolete IRF7495TR applications requiring direct electrical and mechanical compatibility without design modification.

FDS3672 (onsemi)

The FDS3672 is a manufacturer-recommended alternative offering functional compatibility within the specified parameter envelope. This part features a continuous drain current of 7.5A, exceeding the IRF7495TR requirement of 7.3A. The FDS3672 demonstrates lower gate charge (37 nC versus 51 nC), resulting in reduced switching losses in gate-drive-limited applications. On-state resistance is 23 mOhm at 7.5A, compared to 22 mOhm at 4.4A for the IRF7495TR, maintaining acceptable performance characteristics. The FDS3672 is Active product status with ROHS3 compliance and REACH Unaffected certification. This substitute is suitable for applications where improved gate charge performance and higher current capability provide design benefits.

Frequently Asked Questions (FAQ)

Q: Can IRF7495TRPBF be used as a direct replacement for IRF7495TR?

A: Yes. The IRF7495TRPBF is a parametric equivalent with identical electrical specifications: 100V Vdss, 7.3A continuous drain current, 22 mOhm Rds On, and 51 nC gate charge. Both devices use 8-SOIC packaging with identical pinout and footprint. The primary difference is product status (Active versus Obsolete) and regulatory compliance (ROHS3 Compliant versus Non-compliant).

Q: What are the key differences between IRF7495TRPBF and FDS3672?

A: Both devices meet the core electrical requirements of 100V Vdss and 7.3A minimum drain current. The FDS3672 offers 7.5A continuous current and 37 nC gate charge, compared to 7.3A and 51 nC for the IRF7495TRPBF. On-state resistance is comparable: 23 mOhm at 7.5A (FDS3672) versus 22 mOhm at 4.4A (IRF7495TRPBF). Both use 8-SOIC packaging and support -55°C to 150°C operation.

Q: Are there packaging differences between these substitutes?

A: All three parts use 8-SOIC (0.154", 3.90mm Width) surface mount packaging. Pinout and footprint are compatible across IRF7495TR, IRF7495TRPBF, and FDS3672, allowing direct PCB substitution without layout modification.

Q: Which substitute should be selected for new designs?

A: For new designs, either IRF7495TRPBF or FDS3672 is appropriate. IRF7495TRPBF maintains exact electrical specifications of the obsolete IRF7495TR. FDS3672 provides enhanced gate charge performance and higher current capability. Both are Active product status with modern regulatory compliance.

Q: Do these substitutes meet current regulatory requirements?

A: Yes. Both IRF7495TRPBF and FDS3672 are ROHS3 compliant and REACH Unaffected. The original IRF7495TR is RoHS non-compliant. Substitution with either alternative ensures compliance with current environmental and regulatory standards.

Q: What is the impact of lower gate charge in FDS3672?

A: Lower gate charge (37 nC versus 51 nC) reduces the charge required to switch the device on and off. This results in lower gate drive power dissipation and faster switching transitions in gate-drive-limited circuits. Applications with constrained gate drive capability may benefit from FDS3672 selection.

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