IRF7495PBF N-Channel MOSFET 100V 7.3A Equivalent & Substitute Parts

Part Overview

The IRF7495PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 7.3A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The IRF7495PBF is currently discontinued at DiGi Electronics, making identification of equivalent substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, gate characteristics, and thermal specifications while supporting the same 8-SOIC package footprint.

Substiute Parts

IRF7495PBF

Infineon TechnologiesIn Stock: 1460IRF7495PBF Datasheet

Current PartRFQ

FDS86140

onsemiIn Stock: 7577FDS86140 Datasheet

DirectRFQ

FDS3672

onsemiIn Stock: 108213FDS3672 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF7495PBF are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
• Package Type: Must be 8-SOIC (0.154", 3.90mm Width) for PCB footprint compatibility
• FET Type: N-Channel MOSFET technology
• Operating Temperature Range: Must support -55°C to 150°C (TJ)
• RoHS Compliance: ROHS3 Compliant status required

Functional Compatibility Parameters:

• Continuous Drain Current (Id): Substitute must meet or exceed 7.3A at 25°C
• On-State Resistance (Rds On): Lower or equivalent values at 10V gate drive
• Gate Threshold Voltage (Vgs(th)): Must be compatible at 4V maximum
• Gate Charge (Qg): Lower values preferred for faster switching
• Input Capacitance (Ciss): Values within reasonable range for circuit performance

The identified substitute parts FDS3672 and FDS86140 meet all critical matching parameters and provide functional equivalence or improvement over the IRF7495PBF specifications.

Parameter Comparison

Engineering Selection Recommendations

FDS3672 Selection Criteria:

The FDS3672 from onsemi provides the closest electrical match to the IRF7495PBF. This part maintains identical 100V Vdss rating and 7.5A continuous drain current specification, representing a 2.7% increase over the original 7.3A rating. The on-state resistance of 23 mOhm at 10V gate drive is functionally equivalent to the IRF7495PBF specification of 22 mOhm. The FDS3672 offers improved gate charge performance at 37 nC versus 51 nC, enabling faster switching characteristics. This part is currently in active production status with 108,190 pieces in stock, ensuring long-term availability. The FDS3672 maintains identical operating temperature range (-55°C to 150°C TJ), RoHS3 compliance, and MSL 1 rating. The 8-SOIC package footprint is identical, supporting direct PCB substitution without layout modifications.

FDS86140 Selection Criteria:

The FDS86140 from onsemi provides enhanced current handling capability at 11.2A continuous drain current, representing a 53.4% improvement over the IRF7495PBF. This part maintains the same 100V Vdss rating and identical gate threshold voltage of 4V at 250µA. The on-state resistance is significantly reduced to 9.8 mOhm at 10V, providing superior thermal performance and lower power dissipation in high-current applications. Gate charge is 41 nC, intermediate between the main part and FDS3672. The FDS86140 supports dual power dissipation ratings of 2.5W (Ta) and 5W (Tc), offering thermal flexibility. This part is in active production with 7,470 pieces in stock. The FDS86140 maintains identical operating temperature range, RoHS3 compliance, and MSL 1 rating. The 8-SOIC package footprint is identical, supporting direct PCB substitution.

Product Status Justification:

Both substitute parts are in active production status, ensuring continued availability and supply chain stability. The IRF7495PBF discontinuation at DiGi Electronics necessitates transition to actively manufactured alternatives. Both FDS3672 and FDS86140 meet all compliance requirements including ROHS3 compliance, REACH unaffected status, and EAR99 ECCN classification, matching the regulatory profile of the original part.

Frequently Asked Questions (FAQ)

Q: Can FDS3672 be used as a direct replacement for IRF7495PBF in all applications?

A: The FDS3672 meets all critical electrical and mechanical specifications for direct substitution. The 100V Vdss rating, 7.5A continuous drain current, 4V gate threshold voltage, and identical 8-SOIC package enable pin-for-pin replacement. The improved gate charge of 37 nC versus 51 nC may improve switching performance in gate-drive-limited circuits. No PCB layout modifications are required.

Q: What is the primary difference between FDS3672 and FDS86140 substitutes?

A: The FDS86140 provides higher current handling at 11.2A versus 7.5A for FDS3672, and significantly lower on-state resistance at 9.8 mOhm versus 23 mOhm. The FDS86140 is suitable for applications requiring enhanced current capacity or lower thermal dissipation. Both parts share identical 100V Vdss rating, 8-SOIC package, and operating temperature range. Selection depends on application current requirements and thermal constraints.

Q: Are package dimensions identical between IRF7495PBF and substitute parts?

A: Yes. All three parts use the 8-SOIC package with 0.154" (3.90mm) width specification. PCB footprints are identical, supporting direct component substitution without layout redesign or rework.

Q: Do substitute parts maintain the same gate drive voltage requirements?

A: Yes. Both FDS3672 and FDS86140 specify 4V maximum gate threshold voltage at 250µA, matching the IRF7495PBF specification. Gate drive voltage compatibility is maintained across all three parts. The FDS3672 and FDS86140 support both 6V and 10V drive voltage options, providing design flexibility.

Q: What is the impact of higher input capacitance in substitute parts?

A: The FDS3672 input capacitance is 2015 pF at 25V versus 1530 pF for IRF7495PBF, representing a 31.7% increase. The FDS86140 input capacitance is 2580 pF at 50V. Higher input capacitance may require slightly increased gate drive current for equivalent switching speed. In most applications, this difference is negligible due to improved gate charge characteristics in substitute parts.

Q: Are thermal management considerations different between these parts?

A: The IRF7495PBF and FDS3672 both specify 2.5W maximum power dissipation at Ta. The FDS86140 offers dual ratings of 2.5W (Ta) and 5W (Tc), providing enhanced thermal capability when case temperature measurement is available. Lower on-state resistance in FDS86140 (9.8 mOhm) reduces I²R losses compared to IRF7495PBF (22 mOhm) at equivalent current levels.

Q: What compliance certifications are maintained in substitute parts?

A: Both FDS3672 and FDS86140 maintain ROHS3 compliance, REACH unaffected status, and EAR99 ECCN classification, matching the regulatory profile of IRF7495PBF. Moisture sensitivity level remains MSL 1 (Unlimited) for all three parts, supporting standard handling and storage procedures.

Q: Can FDS86140 be used in applications designed for IRF7495PBF?

A: Yes. The FDS86140 meets all critical electrical specifications including 100V Vdss, 4V gate threshold voltage, and identical 8-SOIC package. The higher current rating (11.2A versus 7.3A) and lower on-state resistance (9.8 mOhm versus 22 mOhm) provide performance improvement without introducing incompatibility. Applications are not derating-limited by this substitution.