IRF7493PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7493PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 80V drain-to-source voltage with 9.3A continuous drain current. This device is part of the HEXFET® series and features a surface mount 8-SO package. The IRF7493PBF is currently discontinued at DiGi Electronics, making identification of equivalent substitute components essential for ongoing design support and production continuity. Equivalent parts must maintain functional compatibility across voltage ratings, current handling, thermal characteristics, and package specifications.

Substiute Parts

IRF7493PBF

Infineon TechnologiesIn Stock: 2021IRF7493PBF Datasheet

Current PartRFQ

FDS5670

onsemiIn Stock: 21098FDS5670 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7493PBF is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute part must support the maximum drain-to-source voltage (Vdss) of the original circuit. The IRF7493PBF operates at 80V; substitute parts with lower Vdss ratings (such as 60V) are acceptable only when the circuit design does not exceed the substitute's voltage specification.

Current Handling: The substitute must support continuous drain current (Id) equal to or greater than the application requirement. The IRF7493PBF provides 9.3A; substitutes with equal or higher current ratings maintain thermal and electrical performance margins.

On-State Resistance (Rds On): Lower Rds On values reduce power dissipation and heat generation. The IRF7493PBF specifies 15 mOhm maximum; substitutes with comparable or lower Rds On values ensure equivalent or improved thermal performance.

Package and Mounting: Both the main part and substitute must use identical surface mount package specifications (8-SOIC, 0.154" width, 3.90mm) to ensure PCB compatibility without layout redesign.

Temperature Range: Operating temperature specifications must match or exceed the application requirements (-55°C to 150°C for the IRF7493PBF).

Compliance and Status: RoHS3 compliance and moisture sensitivity level (MSL 1) are maintained across substitute parts to ensure regulatory and manufacturing process compatibility.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: FDS5670 (onsemi)

The FDS5670 is the manufacturer-recommended substitute for the IRF7493PBF. Both devices are RoHS3 compliant with MSL 1 rating, ensuring regulatory and manufacturing compatibility.

Voltage Consideration: The FDS5670 is rated for 60V Vdss, compared to the IRF7493PBF's 80V rating. This substitute is suitable for applications where the maximum circuit voltage does not exceed 60V. For circuits requiring the full 80V capability of the original part, the FDS5670 is not appropriate.

Current and Thermal Performance: The FDS5670 provides 10A continuous drain current, exceeding the IRF7493PBF's 9.3A specification. On-state resistance is 14 mOhm at 10A and 10V gate voltage, compared to 15 mOhm at 5.6A and 10V for the original part. Both devices dissipate a maximum of 2.5W, supporting equivalent thermal design.

Package Compatibility: Both parts use identical 8-SOIC surface mount packaging (0.154" width, 3.90mm), enabling direct PCB replacement without layout modification.

Gate Drive Characteristics: The FDS5670 requires higher gate charge (70 nC versus 53 nC) and exhibits higher input capacitance (2900 pF versus 1510 pF). Gate drive circuits must supply sufficient current to charge these capacitances within the required switching time. Verify gate driver specifications support the FDS5670's capacitive load.

Product Availability: The FDS5670 is actively manufactured by onsemi with 21,071 pieces in stock, providing reliable supply continuity compared to the discontinued IRF7493PBF.

Frequently Asked Questions (FAQ)

Q: Can the FDS5670 directly replace the IRF7493PBF in all applications?

A: Direct replacement is possible only in applications where the circuit voltage does not exceed 60V. The FDS5670's lower Vdss rating (60V versus 80V) limits its use to lower-voltage designs. For circuits requiring 80V operation, alternative substitutes with matching voltage ratings must be identified.

Q: What is the impact of higher gate charge in the FDS5670?

A: The FDS5670 requires 70 nC of gate charge compared to 53 nC for the IRF7493PBF. This increased charge demand requires gate driver circuits to supply higher current or longer pulse durations to achieve the same switching speed. Verify that existing gate driver circuits can deliver the necessary charge without exceeding maximum gate voltage (±20V for both parts).

Q: Are there thermal performance differences between these parts?

A: Both parts specify 2.5W maximum power dissipation. The FDS5670 provides lower on-state resistance (14 mOhm versus 15 mOhm), which reduces conduction losses. However, higher input capacitance increases switching losses. Overall thermal performance depends on the specific application's duty cycle and switching frequency. Thermal analysis of the complete circuit is recommended for high-power applications.

Q: Is PCB layout modification required when substituting the FDS5670?

A: No PCB layout modification is required. Both parts use identical 8-SOIC packaging with 0.154" width and 3.90mm body dimensions. The FDS5670 is a direct footprint replacement. However, gate drive circuit modifications may be necessary to accommodate the higher gate charge.

Q: What compliance certifications apply to the FDS5670?

A: The FDS5670 is RoHS3 compliant and carries MSL 1 (Unlimited) moisture sensitivity rating, matching the IRF7493PBF. Both parts are REACH unaffected and classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: Why is the IRF7493PBF discontinued?

A: The IRF7493PBF is discontinued at DiGi Electronics. The FDS5670 represents the active substitute in the market, with onsemi providing ongoing manufacturing and supply support.