IRF7492TR N-Channel MOSFET 200V 3.7A Equivalent & Substitute Parts

Part Overview

The IRF7492TR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage with 3.7A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The IRF7492TR is classified as obsolete, making identification of functionally equivalent substitute components essential for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

IRF7492TR

Infineon TechnologiesIn Stock: 7772IRF7492TR Datasheet

Current PartRFQ

FDS2672

onsemiIn Stock: 22184FDS2672 Datasheet

MFR RecommendedRFQ

STS5N15F4

STMicroelectronicsIn Stock: 3471STS5N15F4 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7492TR is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
• Continuous Drain Current (Id): Must equal or exceed 3.7A at 25°C
• On-State Resistance (Rds On): Must not exceed 79mOhm at specified gate voltage
• Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
• Power Dissipation: Must support 2.5W thermal rating
• Package: Must be 8-SOIC surface mount configuration
• Operating Temperature: Must span -55°C to 150°C minimum

Secondary Compatibility Parameters:

• Gate Charge (Qg): Lower values indicate faster switching
• Input Capacitance (Ciss): Affects gate drive requirements
• Maximum Gate Voltage (Vgs): Must support ±20V operation

The identified substitute parts meet these criteria with electrical performance equal to or superior to the original IRF7492TR specification.

Parameter Comparison

Engineering Selection Recommendations

FDS2672 (onsemi) - Primary Substitute

The FDS2672 is the recommended primary substitute for the IRF7492TR. Both devices share identical 200V Vdss rating and 8-SOIC packaging. The FDS2672 provides superior electrical performance with 3.9A continuous drain current (versus 3.7A), lower on-state resistance of 70mOhm (versus 79mOhm), and reduced gate charge of 46nC (versus 59nC). The FDS2672 is classified as Active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. Current inventory of 22,120 pieces supports production requirements. The UltraFET™ series designation indicates advanced process technology with improved switching characteristics.

STS5N15F4 (STMicroelectronics) - Secondary Substitute

The STS5N15F4 serves as a secondary substitute option when FDS2672 availability is constrained. This device operates at 150V Vdss (50V lower than the original specification) and delivers 5A continuous drain current with 63mOhm on-state resistance. The STS5N15F4 is suitable only for applications where the 200V voltage rating is not a critical design requirement. The device is Active status with ROHS3 compliance and DeepGATE™/STripFET™ series technology. Current inventory of 3,415 pieces is available. Gate charge of 48nC provides switching performance between the IRF7492TR and FDS2672.

Compliance and Regulatory Considerations

Both substitute parts are ROHS3 compliant and REACH unaffected, addressing modern regulatory requirements. The original IRF7492TR is RoHS non-compliant, making the substitutes advantageous for new designs and updated production runs. All three devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, maintaining export and tariff consistency.

Frequently Asked Questions (FAQ)

Q: Can the FDS2672 directly replace the IRF7492TR in existing designs?

A: Yes. The FDS2672 maintains electrical compatibility across all critical parameters: 200V Vdss rating, 8-SOIC package footprint, -55°C to 150°C operating range, and 2.5W power dissipation. The FDS2672 provides equal or superior performance in drain current (3.9A vs. 3.7A), on-state resistance (70mOhm vs. 79mOhm), and gate charge (46nC vs. 59nC). No circuit modifications are required for direct substitution.

Q: Why is the STS5N15F4 listed as a secondary substitute despite lower Vdss rating?

A: The STS5N15F4 is included as a secondary option for applications where the 200V voltage margin is not critical to circuit operation. The 150V Vdss rating is 25% lower than the IRF7492TR specification. This device should only be selected when application voltage stress analysis confirms that 150V maximum drain-to-source voltage is sufficient. The superior current rating (5A vs. 3.7A) and lower on-state resistance (63mOhm vs. 79mOhm) make it suitable for lower-voltage, higher-current applications.

Q: Are there package compatibility concerns when substituting these parts?

A: No. All three devices use identical 8-SOIC packaging with 0.154" (3.90mm) width. PCB footprints, solder pad layouts, and mounting procedures are fully compatible. No PCB redesign or rework is necessary.

Q: What is the impact of different gate threshold voltages on circuit operation?

A: The IRF7492TR has Vgs(th) of 2.5V at 250µA, while both substitutes specify 4.0V. This 1.5V difference affects gate drive timing and switching speed. For 10V gate drive applications (the specified drive voltage for all three devices), this difference is not critical. However, for marginal gate drive voltages below 5V, the higher threshold voltage of the substitutes may result in slower switching transitions. Standard 10V gate drive circuits will operate identically with all three devices.

Q: How do the differences in input capacitance affect gate drive circuit design?

A: The IRF7492TR specifies 1820pF Ciss at 25V, while the FDS2672 specifies 2535pF at 100V and the STS5N15F4 specifies 2710pF at 25V. Higher input capacitance increases gate charge requirements and switching transition time. The FDS2672 and STS5N15F4 have higher capacitance values, requiring slightly more gate drive current for equivalent switching speed. Existing gate drive circuits designed for the IRF7492TR will function with the substitutes but may experience marginally slower switching. For most applications, this difference is negligible.

Q: What is the significance of product status (Obsolete vs. Active)?

A: The IRF7492TR is classified as Obsolete, indicating that Infineon has discontinued production and will not guarantee future availability. The FDS2672 and STS5N15F4 are both Active products with ongoing manufacturing support. Selecting an Active substitute ensures long-term component availability, consistent quality, and continued technical support from the manufacturer.

Q: Are there any thermal performance differences between these devices?

A: All three devices specify identical maximum power dissipation of 2.5W at ambient temperature (Ta) or case temperature (Tc). Thermal performance is equivalent across all three parts. The IRF7492TR and FDS2672 reference Ta (ambient), while the STS5N15F4 references Tc (case temperature). For practical thermal management, these specifications are functionally equivalent in standard operating conditions.