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IRF7492 Equivalent & Substitute Parts Reference
Part Overview
The IRF7492 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage with 3.7A continuous drain current at 25°C. This device is packaged in an 8-SOIC surface mount configuration and features the HEXFET® series technology. The IRF7492 is classified as obsolete, making identification of functionally equivalent substitute components essential for design continuity and procurement planning. Active alternative parts with comparable electrical and mechanical specifications are available from multiple manufacturers.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 200 | V |
| Continuous Drain Current (Id) @ 25°C | 3.7 | A |
| Rds On (Max) @ 2.2A, 10V | 79 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 2.5 | V |
| Gate Charge (Qg) @ 10V | 59 | nC |
| Power Dissipation (Max) | 2.5 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | 8-SOIC | Surface Mount |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) |
Substitute Part Grouping Explanation
Substitute parts for the IRF7492 are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:
Critical Matching Parameters:
- Drain-to-Source Voltage (Vdss): 200V minimum required
- Package Type: 8-SOIC surface mount configuration
- FET Type: N-Channel MOSFET
- Operating Temperature Range: -55°C to 150°C
- Continuous Drain Current: Minimum 3.7A at 25°C
- Power Dissipation: Minimum 2.5W
- Gate Voltage Range: ±20V maximum
Acceptable Variation Parameters:
- Rds On (Max): Values at or below 79 mOhm are acceptable
- Gate Charge (Qg): Values at or below 59 nC are acceptable
- Gate Threshold Voltage (Vgs(th)): Range of 2V to 4V acceptable
Substitute parts must maintain identical or superior electrical performance within the specified parameter ranges. All identified substitutes meet the 200V Vdss requirement and 8-SOIC package specification.
Parameter Comparison
| Parameter | IRF7492 (Main) | FDS2672 | SI4490DY-T1-E3 | STS5N15F4 |
|---|---|---|---|---|
| Manufacturer | Infineon | onsemi | Vishay Siliconix | STMicroelectronics |
| Vdss (V) | 200 | 200 | 200 | 150 |
| Id @ 25°C (A) | 3.7 | 3.9 | 2.85 | 5.0 |
| Rds On (Max) @ 10V (mOhm) | 79 @ 2.2A | 70 @ 3.9A | 80 @ 4A | 63 @ 2.5A |
| Vgs(th) @ 250µA (V) | 2.5 | 4.0 | 2.0 | 4.0 |
| Gate Charge @ 10V (nC) | 59 | 46 | 42 | 48 |
| Power Dissipation (Max) (W) | 2.5 | 2.5 | 1.56 | 2.5 |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 |
| Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Product Status | Obsolete | Active | Active | Active |
| RoHS Compliance | Non-compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
FDS2672 (onsemi) provides the closest electrical match to the IRF7492. This part maintains the 200V Vdss rating, exceeds the 3.7A continuous drain current requirement with 3.9A capability, and delivers superior Rds On performance at 70 mOhm. The FDS2672 is actively manufactured, ROHS3 compliant, and available in high inventory quantities (22,120 pcs). Gate charge is reduced to 46 nC, improving switching efficiency. This part is recommended as the primary substitute for direct replacement applications.
SI4490DY-T1-E3 (Vishay Siliconix) maintains 200V Vdss and identical operating temperature range. This part features the lowest gate charge at 42 nC and lowest gate threshold voltage at 2.0V minimum, enabling faster switching response. However, continuous drain current is reduced to 2.85A and power dissipation is limited to 1.56W. This substitute is suitable for applications where the IRF7492 operates below 2.85A continuous current. Active product status and ROHS3 compliance are confirmed.
STS5N15F4 (STMicroelectronics) operates at reduced Vdss of 150V, making it unsuitable for 200V applications. This part is not recommended as a substitute for the IRF7492 due to voltage rating mismatch.
All recommended substitutes are actively manufactured, ROHS3 compliant, and available from authorized distributors. Selection should be based on specific application current and voltage requirements.
Frequently Asked Questions (FAQ)
Q: Can the FDS2672 directly replace the IRF7492 in all applications?
A: The FDS2672 maintains identical 200V Vdss and 8-SOIC package specifications. Electrical performance is equivalent or superior across all key parameters. Direct substitution is supported for applications operating within the specified current and temperature ranges.
Q: Why is the STS5N15F4 listed as a substitute if it has only 150V Vdss?
A: The STS5N15F4 is not recommended as a substitute for the IRF7492. The 150V Vdss rating is insufficient for 200V applications. This part appears in the substitute list but does not meet the critical voltage requirement for equivalent operation.
Q: What is the impact of different gate charge values on circuit performance?
A: Gate charge (Qg) affects switching speed and gate drive requirements. The FDS2672 (46 nC) and SI4490DY-T1-E3 (42 nC) have lower gate charge than the IRF7492 (59 nC), resulting in faster switching transitions and reduced gate drive power consumption. Circuit designs must verify gate driver capability for the selected substitute.
Q: Are all substitute parts available in the same packaging?
A: Yes. The IRF7492 and all listed substitutes use 8-SOIC (0.154", 3.90mm width) surface mount packaging. PCB footprints are identical, enabling direct physical replacement without layout modifications.
Q: What is the significance of RoHS compliance status?
A: The IRF7492 is RoHS non-compliant due to its obsolete status. All active substitute parts (FDS2672, SI4490DY-T1-E3, STS5N15F4) are ROHS3 compliant, meeting current environmental and regulatory requirements for new designs and procurement.
Q: How do I select between FDS2672 and SI4490DY-T1-E3?
A: Selection depends on application current requirements. The FDS2672 supports 3.9A continuous current and is recommended for applications requiring the full 3.7A IRF7492 capability. The SI4490DY-T1-E3 is limited to 2.85A and is suitable only for lower-current applications. Both maintain 200V Vdss and identical operating temperature range.
Q: What is the moisture sensitivity level for substitute parts?
A: All substitute parts carry MSL 1 (Unlimited) rating, identical to the IRF7492. No special moisture control measures are required during storage or handling.
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