IRF7490PBF N-Channel MOSFET 100V 5.4A Equivalent & Substitute Parts

Part Overview

The IRF7490PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 5.4A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The IRF7490PBF is currently discontinued at DiGi Electronics, making identification of equivalent substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

IRF7490PBF

Infineon TechnologiesIn Stock: 1330IRF7490PBF Datasheet

Current PartRFQ

FDS3672

onsemiIn Stock: 108213FDS3672 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF7490PBF are identified based on strict electrical and mechanical compatibility criteria. The primary substitute, FDS3672 from onsemi, qualifies as a direct equivalent based on the following alignment of critical parameters:

Matching Parameters:

• Drain to Source Voltage (Vdss): 100V (identical)
• Gate Threshold Voltage (Vgs(th)): 4V @ 250µA (identical)
• Maximum Gate Voltage (Vgs): ±20V (identical)
• Power Dissipation (Max): 2.5W (identical)
• Operating Temperature Range: -55°C to 150°C (identical)
• Package Configuration: 8-SOIC, 0.154" width, 3.90mm (identical)
• RoHS3 Compliance: Yes (identical)
• Moisture Sensitivity Level: 1 (Unlimited) (identical)

Enhanced Performance Characteristics: The FDS3672 demonstrates superior electrical performance within the same voltage and thermal envelope. The continuous drain current rating increases from 5.4A to 7.5A, and the on-resistance (Rds On) decreases from 39mOhm to 23mOhm at 10V gate drive. Gate charge reduces from 56nC to 37nC, indicating improved switching efficiency. These enhancements provide design margin and performance benefits without requiring circuit modifications.

Parameter Comparison

Engineering Selection Recommendations

The FDS3672 from onsemi is a qualified direct substitute for the discontinued IRF7490PBF. Selection is based on the following engineering criteria:

Electrical Compatibility: Both devices operate at identical voltage ratings (100V Vdss) and threshold voltages (4V Vgs(th)), ensuring gate drive circuits and voltage protection schemes require no modification. The ±20V maximum gate voltage specification is identical, confirming compatibility with existing gate driver designs.

Thermal and Power Characteristics: Identical power dissipation ratings (2.5W) and operating temperature ranges (-55°C to 150°C) ensure thermal management designs remain valid. The FDS3672 provides enhanced current handling (7.5A vs. 5.4A) and reduced on-resistance (23mOhm vs. 39mOhm), delivering improved thermal performance within the same power budget.

Mechanical and Packaging Compatibility: Both devices use 8-SOIC packaging with identical physical dimensions (0.154" width, 3.90mm). PCB footprints, solder reflow profiles, and assembly processes require no changes.

Regulatory and Compliance Status: Both parts maintain RoHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status. The FDS3672 holds Active product status, ensuring long-term availability and supply chain continuity compared to the discontinued IRF7490PBF.

Inventory and Supply: The FDS3672 maintains substantial inventory (108,190 pcs) in active distribution channels, providing immediate procurement capability and production support.

Frequently Asked Questions (FAQ)

Q: Can the FDS3672 be used as a direct replacement for the IRF7490PBF without circuit modifications?

A: Yes. The FDS3672 maintains identical voltage ratings (100V Vdss), gate threshold voltage (4V), maximum gate voltage (±20V), power dissipation (2.5W), and operating temperature range (-55°C to 150°C). The 8-SOIC package dimensions are identical. No circuit modifications are required for direct substitution.

Q: What are the performance differences between these two devices?

A: The FDS3672 provides enhanced performance within the same electrical and thermal envelope. Continuous drain current increases from 5.4A to 7.5A, on-resistance decreases from 39mOhm to 23mOhm at 10V gate drive, and gate charge reduces from 56nC to 37nC. These improvements provide design margin and lower switching losses without requiring design changes.

Q: Are the PCB footprints identical?

A: Yes. Both devices use 8-SOIC packaging with identical physical dimensions (0.154" width, 3.90mm). PCB footprints are directly compatible. No layout modifications are necessary.

Q: What is the availability status of each part?

A: The IRF7490PBF is discontinued at DiGi Electronics. The FDS3672 maintains Active product status with 108,190 pcs in current inventory, ensuring reliable long-term supply.

Q: Do both parts meet the same regulatory requirements?

A: Yes. Both the IRF7490PBF and FDS3672 are RoHS3 compliant, MSL Level 1 (Unlimited), and REACH Unaffected. Regulatory documentation and compliance certifications are equivalent.

Q: How do the gate charge specifications affect circuit performance?

A: The FDS3672 gate charge (37nC @ 10V) is lower than the IRF7490PBF (56nC @ 10V), resulting in faster switching transitions and reduced gate driver power consumption. Existing gate driver circuits will operate with improved efficiency margins.

Q: Are there any thermal management considerations when substituting these parts?

A: Both devices share identical power dissipation ratings (2.5W) and operating temperature ranges (-55°C to 150°C). Thermal management designs, heatsink requirements, and PCB thermal layouts remain unchanged. The FDS3672's lower on-resistance may reduce junction temperature in current-limited applications.